DE2800335A1 - Integrierte injektionsschaltung - Google Patents
Integrierte injektionsschaltungInfo
- Publication number
- DE2800335A1 DE2800335A1 DE19782800335 DE2800335A DE2800335A1 DE 2800335 A1 DE2800335 A1 DE 2800335A1 DE 19782800335 DE19782800335 DE 19782800335 DE 2800335 A DE2800335 A DE 2800335A DE 2800335 A1 DE2800335 A1 DE 2800335A1
- Authority
- DE
- Germany
- Prior art keywords
- gate
- field effect
- effect transistor
- substrate
- integrated injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000002347 injection Methods 0.000 title claims description 13
- 239000007924 injection Substances 0.000 title claims description 13
- 230000005669 field effect Effects 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 8
- 230000000873 masking effect Effects 0.000 claims description 4
- 235000013601 eggs Nutrition 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 11
- 230000007704 transition Effects 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/091—Integrated injection logic or merged transistor logic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
- H03K19/09414—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors with gate injection or static induction [STIL]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
- H03K19/09418—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors in combination with bipolar transistors [BIFET]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0952—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
- H10D89/213—Design considerations for internal polarisation in field-effect devices
- H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU772441385A SU602055A1 (ru) | 1977-01-06 | 1977-01-06 | Интегральный логический элемент |
| SU772537101A SU646391A1 (ru) | 1977-11-01 | 1977-11-01 | Полевой транзистор |
| SU2537006 | 1977-11-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2800335A1 true DE2800335A1 (de) | 1978-07-13 |
Family
ID=27356306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19782800335 Ceased DE2800335A1 (de) | 1977-01-06 | 1978-01-04 | Integrierte injektionsschaltung |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS53108291A (en, 2012) |
| CH (1) | CH616276A5 (en, 2012) |
| CS (1) | CS199407B1 (en, 2012) |
| DD (1) | DD136907A1 (en, 2012) |
| DE (1) | DE2800335A1 (en, 2012) |
| FR (1) | FR2377123A1 (en, 2012) |
| GB (1) | GB1565918A (en, 2012) |
| NL (1) | NL7800046A (en, 2012) |
| PL (1) | PL119495B1 (en, 2012) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5540051A (en) * | 1978-09-12 | 1980-03-21 | Mitsubishi Electric Corp | T-joint and production thereof |
| JPS573651Y2 (en, 2012) * | 1979-10-08 | 1982-01-22 | ||
| GB2130790B (en) * | 1982-10-26 | 1986-04-16 | Plessey Co Plc | Integrated injection logic device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2655917A1 (de) * | 1975-12-09 | 1977-06-16 | Zaidan Hojin Handotai Kenkyu | Integrierte schaltung |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2321796C2 (de) * | 1973-04-30 | 1982-07-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Feldeffekttransistor |
-
1977
- 1977-12-29 CS CS779005A patent/CS199407B1/cs unknown
-
1978
- 1978-01-02 NL NL7800046A patent/NL7800046A/xx not_active Application Discontinuation
- 1978-01-04 DD DD78203095A patent/DD136907A1/xx unknown
- 1978-01-04 DE DE19782800335 patent/DE2800335A1/de not_active Ceased
- 1978-01-04 CH CH9178A patent/CH616276A5/de not_active IP Right Cessation
- 1978-01-05 GB GB395/78A patent/GB1565918A/en not_active Expired
- 1978-01-05 PL PL1978203827A patent/PL119495B1/pl unknown
- 1978-01-05 FR FR7800244A patent/FR2377123A1/fr active Granted
- 1978-01-06 JP JP48078A patent/JPS53108291A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2655917A1 (de) * | 1975-12-09 | 1977-06-16 | Zaidan Hojin Handotai Kenkyu | Integrierte schaltung |
Also Published As
| Publication number | Publication date |
|---|---|
| PL203827A1 (pl) | 1978-10-23 |
| PL119495B1 (en) | 1982-01-30 |
| CH616276A5 (en) | 1980-03-14 |
| CS199407B1 (en) | 1980-07-31 |
| FR2377123B1 (en, 2012) | 1980-05-16 |
| FR2377123A1 (fr) | 1978-08-04 |
| NL7800046A (nl) | 1978-07-10 |
| DD136907A1 (de) | 1979-08-01 |
| GB1565918A (en) | 1980-04-23 |
| JPS53108291A (en) | 1978-09-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3834841C2 (de) | Integrierte Anordnung in einem Substrat zur Vermeidung parasitärer Substrateffekte | |
| DE3855603T2 (de) | Integrierter bipolarer Hochspannungsleistungstransistor und Niederspannungs-MOS-Transistorstruktur in Emitterumschaltkonfiguration und Herstellungsverfahren | |
| DE2257846A1 (de) | Integrierte halbleiteranordnung zum schutz gegen ueberspannung | |
| DE2816795A1 (de) | Verfahren zur herstellung eines substrats fuer einen cmos-schaltkreis und nach einem solchen verfahren hergestellter schaltkreis | |
| DE3779789T2 (de) | Gleichspannungsvervielfacher, der in eine halbleiterschicht integriert werden kann. | |
| DE2107037A1 (de) | Halbleiterbaueinheit | |
| DE2930630A1 (de) | Halbleiterbauelement | |
| DE19623846A1 (de) | Halbleitereinrichtung | |
| DE1808661A1 (de) | Halbleiter-Bauelement | |
| DE69420565T2 (de) | Treiberschaltung für elektronische Halbleiterbauelemente mit wenigstens einem Leistungstransistor | |
| DE68911809T2 (de) | Integrierbare, aktive Diode. | |
| DE2432352B2 (de) | MNOS-Halbleiterspeicherelement | |
| DE2604088A1 (de) | Integrierte halbleiterschaltung | |
| DE3244488A1 (de) | Elektrisch programmierbarer permanenter speicher | |
| DE2940954A1 (de) | Verfahren zur herstellung von hochspannungs-mos-transistoren enthaltenden mos-integrierten schaltkreisen sowie schaltungsanordnung zum schalten von leistungsstromkreisen unter verwendung derartiger hochspannungs-mos-transistoren | |
| DE3635523A1 (de) | Elektronische halbleiteranordnung zum schutz von integrierten schaltungen sowie verfahren zu deren herstellung | |
| DE3635729A1 (de) | Elektronische anordnung zum schutz von integrierten schaltungen vor elektrostatischer aufladung und verfahren zu deren herstellung | |
| DE2800335A1 (de) | Integrierte injektionsschaltung | |
| DE7141390U (de) | Halbleiteranordnung insbesondere feldeffekttransistor mit diffundierten schutzbereichen und/oder isolierenden torbereichen | |
| DE1947937A1 (de) | Inverter mit Isolierschicht-Feldeffekttransistoren | |
| DE2007627B2 (de) | Verfahren zum herstellen einer integrierten halbleiterschaltung | |
| DE2415736A1 (de) | Metall-silizium-feldeffekttransistor | |
| DE3408285A1 (de) | Schutzanordnung fuer einen feldeffekttransistor | |
| DE2915918A1 (de) | Halbleiteranordnung mit ueberspannungsschutz | |
| DE1803175A1 (de) | Flip-Flop |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAR | Request for search filed | ||
| OB | Request for examination as to novelty | ||
| OC | Search report available | ||
| 8128 | New person/name/address of the agent |
Representative=s name: VON FUENER, A., DIPL.-CHEM. DR.RER.NAT. EBBINGHAUS |
|
| 8110 | Request for examination paragraph 44 | ||
| 8131 | Rejection |