JPS53108291A - Integration implating circuit - Google Patents

Integration implating circuit

Info

Publication number
JPS53108291A
JPS53108291A JP48078A JP48078A JPS53108291A JP S53108291 A JPS53108291 A JP S53108291A JP 48078 A JP48078 A JP 48078A JP 48078 A JP48078 A JP 48078A JP S53108291 A JPS53108291 A JP S53108291A
Authority
JP
Japan
Prior art keywords
implating
integration
circuit
integration implating
implating circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48078A
Other languages
English (en)
Japanese (ja)
Inventor
Rubenouitsuchi Naz Arutashiesu
Yakoureuitsuchi Fuyachiesurafu
Nikoraeuitsuchi Kokin Biruyamu
Iwanouitsuchi Suradok Bikutoru
Warenchinouitsuchi Benk Porisu
Warerieuitsuchi Wajiimu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SU772441385A external-priority patent/SU602055A1/ru
Priority claimed from SU772537101A external-priority patent/SU646391A1/ru
Application filed by Individual filed Critical Individual
Publication of JPS53108291A publication Critical patent/JPS53108291A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09414—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors with gate injection or static induction [STIL]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09418—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors in combination with bipolar transistors [BIFET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0952—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP48078A 1977-01-06 1978-01-06 Integration implating circuit Pending JPS53108291A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SU772441385A SU602055A1 (ru) 1977-01-06 1977-01-06 Интегральный логический элемент
SU772537101A SU646391A1 (ru) 1977-11-01 1977-11-01 Полевой транзистор
SU2537006 1977-11-11

Publications (1)

Publication Number Publication Date
JPS53108291A true JPS53108291A (en) 1978-09-20

Family

ID=27356306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48078A Pending JPS53108291A (en) 1977-01-06 1978-01-06 Integration implating circuit

Country Status (9)

Country Link
JP (1) JPS53108291A (en, 2012)
CH (1) CH616276A5 (en, 2012)
CS (1) CS199407B1 (en, 2012)
DD (1) DD136907A1 (en, 2012)
DE (1) DE2800335A1 (en, 2012)
FR (1) FR2377123A1 (en, 2012)
GB (1) GB1565918A (en, 2012)
NL (1) NL7800046A (en, 2012)
PL (1) PL119495B1 (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5540051A (en) * 1978-09-12 1980-03-21 Mitsubishi Electric Corp T-joint and production thereof
JPS5655559U (en, 2012) * 1979-10-08 1981-05-14

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2130790B (en) * 1982-10-26 1986-04-16 Plessey Co Plc Integrated injection logic device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5292468A (en) * 1975-12-09 1977-08-03 Handotai Kenkyu Shinkokai Ic having inverted electrostatic induction transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2321796C2 (de) * 1973-04-30 1982-07-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Feldeffekttransistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5292468A (en) * 1975-12-09 1977-08-03 Handotai Kenkyu Shinkokai Ic having inverted electrostatic induction transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5540051A (en) * 1978-09-12 1980-03-21 Mitsubishi Electric Corp T-joint and production thereof
JPS5655559U (en, 2012) * 1979-10-08 1981-05-14

Also Published As

Publication number Publication date
DE2800335A1 (de) 1978-07-13
PL203827A1 (pl) 1978-10-23
PL119495B1 (en) 1982-01-30
CH616276A5 (en) 1980-03-14
CS199407B1 (en) 1980-07-31
FR2377123B1 (en, 2012) 1980-05-16
FR2377123A1 (fr) 1978-08-04
NL7800046A (nl) 1978-07-10
DD136907A1 (de) 1979-08-01
GB1565918A (en) 1980-04-23

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