CH464864A - Verfahren zum Herstellen von einkristallinem Silizium - Google Patents
Verfahren zum Herstellen von einkristallinem SiliziumInfo
- Publication number
- CH464864A CH464864A CH1087461A CH1087461A CH464864A CH 464864 A CH464864 A CH 464864A CH 1087461 A CH1087461 A CH 1087461A CH 1087461 A CH1087461 A CH 1087461A CH 464864 A CH464864 A CH 464864A
- Authority
- CH
- Switzerland
- Prior art keywords
- silicon
- reaction
- compound
- hydrogen
- boron
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 32
- 230000008569 process Effects 0.000 title claims description 21
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 72
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 68
- 229910052710 silicon Inorganic materials 0.000 claims description 68
- 239000010703 silicon Substances 0.000 claims description 68
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 67
- 230000008021 deposition Effects 0.000 claims description 46
- 239000012495 reaction gas Substances 0.000 claims description 44
- 238000006243 chemical reaction Methods 0.000 claims description 43
- 229910052739 hydrogen Inorganic materials 0.000 claims description 41
- 239000001257 hydrogen Substances 0.000 claims description 41
- 239000000203 mixture Substances 0.000 claims description 37
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 25
- 150000003377 silicon compounds Chemical class 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 21
- 229910000039 hydrogen halide Inorganic materials 0.000 claims description 13
- 239000012433 hydrogen halide Substances 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 9
- 229910052736 halogen Inorganic materials 0.000 claims description 8
- 150000002367 halogens Chemical class 0.000 claims description 8
- 150000002431 hydrogen Chemical class 0.000 claims description 7
- -1 hydrogen compound Chemical class 0.000 claims description 6
- 150000002366 halogen compounds Chemical class 0.000 claims description 5
- 239000011541 reaction mixture Substances 0.000 claims description 5
- 150000001639 boron compounds Chemical class 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 26
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 26
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 26
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 6
- 239000005046 Chlorosilane Substances 0.000 description 5
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000370 acceptor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002452 interceptive effect Effects 0.000 description 3
- 238000011835 investigation Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- PPDADIYYMSXQJK-UHFFFAOYSA-N trichlorosilicon Chemical compound Cl[Si](Cl)Cl PPDADIYYMSXQJK-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000001603 reducing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES71249A DE1147567B (de) | 1960-01-15 | 1960-11-14 | Verfahren zum Gewinnen von insbesondere einkristallinem, halbleitendem Silicium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH464864A true CH464864A (de) | 1968-11-15 |
Family
ID=7502338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1087461A CH464864A (de) | 1960-11-14 | 1961-09-19 | Verfahren zum Herstellen von einkristallinem Silizium |
Country Status (3)
| Country | Link |
|---|---|
| BE (1) | BE610281A (h) |
| CH (1) | CH464864A (h) |
| SE (1) | SE306077B (h) |
-
1961
- 1961-09-19 CH CH1087461A patent/CH464864A/de unknown
- 1961-11-13 SE SE1129761A patent/SE306077B/xx unknown
- 1961-11-14 BE BE610281A patent/BE610281A/fr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE306077B (h) | 1968-11-18 |
| BE610281A (fr) | 1962-03-01 |
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