CA3233586A1 - A membrane assembly - Google Patents
A membrane assemblyInfo
- Publication number
- CA3233586A1 CA3233586A1 CA3233586A CA3233586A CA3233586A1 CA 3233586 A1 CA3233586 A1 CA 3233586A1 CA 3233586 A CA3233586 A CA 3233586A CA 3233586 A CA3233586 A CA 3233586A CA 3233586 A1 CA3233586 A1 CA 3233586A1
- Authority
- CA
- Canada
- Prior art keywords
- membrane
- patterning device
- assembly
- frame assembly
- border
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012528 membrane Substances 0.000 title claims abstract description 284
- 238000000059 patterning Methods 0.000 claims abstract description 199
- 238000001900 extreme ultraviolet lithography Methods 0.000 claims abstract description 24
- 239000002245 particle Substances 0.000 claims description 24
- 230000007246 mechanism Effects 0.000 claims description 17
- 239000000356 contaminant Substances 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 139
- 230000005855 radiation Effects 0.000 description 71
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 64
- 229910052710 silicon Inorganic materials 0.000 description 63
- 239000010703 silicon Substances 0.000 description 63
- 239000000758 substrate Substances 0.000 description 41
- 150000003377 silicon compounds Chemical class 0.000 description 26
- 239000000463 material Substances 0.000 description 18
- 239000007789 gas Substances 0.000 description 13
- 238000005286 illumination Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 12
- 238000013508 migration Methods 0.000 description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 11
- 229910052796 boron Inorganic materials 0.000 description 11
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 229910052719 titanium Inorganic materials 0.000 description 11
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 9
- 229910052707 ruthenium Inorganic materials 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000011733 molybdenum Substances 0.000 description 7
- 238000011109 contamination Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000000446 fuel Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 210000001747 pupil Anatomy 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910052580 B4C Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- NUHSROFQTUXZQQ-UHFFFAOYSA-N isopentenyl diphosphate Chemical compound CC(=C)CCO[P@](O)(=O)OP(O)(O)=O NUHSROFQTUXZQQ-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005510 radiation hardening Methods 0.000 description 1
- 239000012858 resilient material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
- G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Library & Information Science (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Mutual Connection Of Rods And Tubes (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP15199845 | 2015-12-14 | ||
| EP15199845.7 | 2015-12-14 | ||
| EP16157967.7 | 2016-03-01 | ||
| EP16157967 | 2016-03-01 | ||
| EP16163962 | 2016-04-06 | ||
| EP16163962.0 | 2016-04-06 | ||
| CA3008050A CA3008050C (en) | 2015-12-14 | 2016-12-02 | A membrane assembly |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA3008050A Division CA3008050C (en) | 2015-12-14 | 2016-12-02 | A membrane assembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA3233586A1 true CA3233586A1 (en) | 2017-06-22 |
Family
ID=57460536
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA3233586A Pending CA3233586A1 (en) | 2015-12-14 | 2016-12-02 | A membrane assembly |
| CA3008050A Active CA3008050C (en) | 2015-12-14 | 2016-12-02 | A membrane assembly |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA3008050A Active CA3008050C (en) | 2015-12-14 | 2016-12-02 | A membrane assembly |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US11036128B2 (zh) |
| EP (1) | EP3391140A1 (zh) |
| JP (1) | JP7242299B2 (zh) |
| KR (1) | KR20180094085A (zh) |
| CN (1) | CN108604058A (zh) |
| CA (2) | CA3233586A1 (zh) |
| NL (2) | NL2017912B1 (zh) |
| TW (1) | TWI726952B (zh) |
| WO (1) | WO2017102378A1 (zh) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6687630B2 (ja) | 2015-02-03 | 2020-04-22 | エーエスエムエル ネザーランズ ビー．ブイ． | マスクアセンブリ及び関連する方法 |
| JP6858777B2 (ja) | 2015-12-14 | 2021-04-14 | エーエスエムエル ネザーランズ ビー．ブイ． | Ｅｕｖリソグラフィのための膜 |
| JP7097872B2 (ja) | 2016-07-29 | 2022-07-08 | エーエスエムエル ホールディング エヌ．ブイ． | ステージ装置 |
| US11156927B1 (en) | 2018-04-24 | 2021-10-26 | Kla Corporation | System and method for switching between an EUV pellicle and an optical pellicle |
| US11143951B2 (en) * | 2018-04-30 | 2021-10-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pellicle for an EUV lithography mask and a method of manufacturing thereof |
| US11237482B2 (en) * | 2018-08-14 | 2022-02-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process system and operating method thereof |
| US11137693B2 (en) * | 2018-11-30 | 2021-10-05 | Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University) | Pellicle holder, pellicle inspection apparatus, and pellicle inspection method |
| KR102690337B1 (ko) * | 2022-12-19 | 2024-08-05 | 주식회사 에프에스티 | 3d 탄성 픽스쳐를 포함하는 펠리클 마운팅 어셈블리 및 이를 이용한 펠리클 마운팅 방법과 이를 이용한 펠리클 디 마운팅 방법, 이를 포함한 euv 노광 장치 |
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| JPS61145936A (ja) | 1984-12-19 | 1986-07-03 | Matsushita Electric Ind Co Ltd | ラジオ受信回路 |
| JPH07113378B2 (ja) * | 1985-11-27 | 1995-12-06 | 松井ワルターシャイド株式会社 | 着脱自在な結合装置 |
| JPH0324547A (ja) * | 1989-06-22 | 1991-02-01 | Oki Electric Ind Co Ltd | マスク保護用ペリクル |
| JPH05231411A (ja) | 1992-02-14 | 1993-09-07 | Mitsubishi Heavy Ind Ltd | 抜け止めピン |
| JPH06284917A (ja) | 1993-04-02 | 1994-10-11 | Citizen Watch Co Ltd | ロック装置 |
| JPH07113378A (ja) | 1993-10-19 | 1995-05-02 | Ykk Architect Prod Kk | 断熱形材の製作方法 |
| JPH10198022A (ja) | 1997-01-07 | 1998-07-31 | Shin Etsu Chem Co Ltd | ペリクル収納容器 |
| JP4006659B2 (ja) * | 1998-01-14 | 2007-11-14 | 沖電気工業株式会社 | ペリクルの取付構造 |
| JPH11295880A (ja) * | 1998-04-07 | 1999-10-29 | Seiko Epson Corp | ペリクルフレーム |
| US6197454B1 (en) | 1998-12-29 | 2001-03-06 | Intel Corporation | Clean-enclosure window to protect photolithographic mask |
| US6192100B1 (en) | 1999-06-18 | 2001-02-20 | International Business Machines Corporation | X-ray mask pellicles and their attachment in semiconductor manufacturing |
| US6239863B1 (en) | 1999-10-08 | 2001-05-29 | Silicon Valley Group, Inc. | Removable cover for protecting a reticle, system including and method of using the same |
| US6492067B1 (en) | 1999-12-03 | 2002-12-10 | Euv Llc | Removable pellicle for lithographic mask protection and handling |
| JP2002372777A (ja) | 2001-06-18 | 2002-12-26 | Canon Inc | ガス置換方法および露光装置 |
| US6573980B2 (en) | 2001-07-26 | 2003-06-03 | Micro Lithography, Inc. | Removable optical pellicle |
| JP3788959B2 (ja) | 2002-08-05 | 2006-06-21 | 日本航空電子工業株式会社 | コネクタの筐体への取り付け構造及びコネクタ装置 |
| US7105047B2 (en) | 2003-05-06 | 2006-09-12 | Wessex Incorporated | Thermal protective coating |
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| NL2017912A (en) | 2017-06-26 |
| WO2017102378A1 (en) | 2017-06-22 |
| KR20180094085A (ko) | 2018-08-22 |
| EP3391140A1 (en) | 2018-10-24 |
| CA3008050C (en) | 2024-05-07 |
| NL2017912B1 (en) | 2018-01-11 |
| US11036128B2 (en) | 2021-06-15 |
| CN108604058A (zh) | 2018-09-28 |
| TWI726952B (zh) | 2021-05-11 |
| JP7242299B2 (ja) | 2023-03-20 |
| JP2019504342A (ja) | 2019-02-14 |
| TW201732418A (zh) | 2017-09-16 |
| US20180373141A1 (en) | 2018-12-27 |
| NL2020094A (en) | 2018-01-11 |
| NL2020094B1 (en) | 2018-10-10 |
| CA3008050A1 (en) | 2017-06-22 |
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