CA2762470C - Method for fabricating a semiconductor device package - Google Patents

Method for fabricating a semiconductor device package Download PDF

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Publication number
CA2762470C
CA2762470C CA2762470A CA2762470A CA2762470C CA 2762470 C CA2762470 C CA 2762470C CA 2762470 A CA2762470 A CA 2762470A CA 2762470 A CA2762470 A CA 2762470A CA 2762470 C CA2762470 C CA 2762470C
Authority
CA
Canada
Prior art keywords
metal layer
semiconductor device
patterned
layer
vias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA2762470A
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English (en)
French (fr)
Other versions
CA2762470A1 (en
Inventor
Paul Alan Mcconnelee
Arun Virupaksha Gowda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of CA2762470A1 publication Critical patent/CA2762470A1/en
Application granted granted Critical
Publication of CA2762470C publication Critical patent/CA2762470C/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H10W70/093—
    • H10W70/095—
    • H10W90/00—
    • H10W70/60—
    • H10W72/01333—
    • H10W72/01336—
    • H10W72/073—
    • H10W72/07337—
    • H10W72/07338—
    • H10W72/354—
    • H10W72/853—
    • H10W72/874—
    • H10W72/926—
    • H10W72/9413—
    • H10W72/944—
    • H10W74/142—
    • H10W90/734—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
CA2762470A 2010-12-22 2011-12-15 Method for fabricating a semiconductor device package Expired - Fee Related CA2762470C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/975,466 US8114712B1 (en) 2010-12-22 2010-12-22 Method for fabricating a semiconductor device package
US12/975,466 2010-12-22

Publications (2)

Publication Number Publication Date
CA2762470A1 CA2762470A1 (en) 2012-06-22
CA2762470C true CA2762470C (en) 2019-01-15

Family

ID=45218549

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2762470A Expired - Fee Related CA2762470C (en) 2010-12-22 2011-12-15 Method for fabricating a semiconductor device package

Country Status (6)

Country Link
US (2) US8114712B1 (enExample)
EP (1) EP2469591B1 (enExample)
JP (1) JP5873323B2 (enExample)
CN (1) CN102593046B (enExample)
BR (1) BRPI1105202A2 (enExample)
CA (1) CA2762470C (enExample)

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JP2017126688A (ja) * 2016-01-15 2017-07-20 株式会社ジェイデバイス 半導体パッケージの製造方法及び半導体パッケージ
US10333493B2 (en) 2016-08-25 2019-06-25 General Electric Company Embedded RF filter package structure and method of manufacturing thereof
US10700035B2 (en) 2016-11-04 2020-06-30 General Electric Company Stacked electronics package and method of manufacturing thereof
US9966361B1 (en) 2016-11-04 2018-05-08 General Electric Company Electronics package having a multi-thickness conductor layer and method of manufacturing thereof
US10312194B2 (en) 2016-11-04 2019-06-04 General Electric Company Stacked electronics package and method of manufacturing thereof
US9966371B1 (en) 2016-11-04 2018-05-08 General Electric Company Electronics package having a multi-thickness conductor layer and method of manufacturing thereof
JP6863574B2 (ja) * 2017-02-22 2021-04-21 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
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US10522423B2 (en) 2017-08-30 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure for fin-like field effect transistor
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Also Published As

Publication number Publication date
CA2762470A1 (en) 2012-06-22
US8114712B1 (en) 2012-02-14
US20120161325A1 (en) 2012-06-28
CN102593046A (zh) 2012-07-18
EP2469591A3 (en) 2018-01-31
CN102593046B (zh) 2015-08-26
US8334593B2 (en) 2012-12-18
JP2012134500A (ja) 2012-07-12
JP5873323B2 (ja) 2016-03-01
EP2469591B1 (en) 2021-01-27
EP2469591A2 (en) 2012-06-27
BRPI1105202A2 (pt) 2013-04-09

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