CA2729334A1 - High performance solution processable seminconductor based on dithieno [2,3-d:2',3'-d']benzo[1,2-b:4,5-b'] dithiophene - Google Patents

High performance solution processable seminconductor based on dithieno [2,3-d:2',3'-d']benzo[1,2-b:4,5-b'] dithiophene Download PDF

Info

Publication number
CA2729334A1
CA2729334A1 CA2729334A CA2729334A CA2729334A1 CA 2729334 A1 CA2729334 A1 CA 2729334A1 CA 2729334 A CA2729334 A CA 2729334A CA 2729334 A CA2729334 A CA 2729334A CA 2729334 A1 CA2729334 A1 CA 2729334A1
Authority
CA
Canada
Prior art keywords
group
alkyl
aryl
dithienobenzodithiophenes
independently selected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2729334A
Other languages
English (en)
French (fr)
Inventor
Marcel Kastler
Silke Annika Koehler
Klaus Muellen
Peng Gao
Dirk Beckmann
Xinliang Feng
Hoi Nok Tsao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF SE
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Original Assignee
BASF SE
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF SE, Max Planck Gesellschaft zur Foerderung der Wissenschaften eV filed Critical BASF SE
Publication of CA2729334A1 publication Critical patent/CA2729334A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/22—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains four or more hetero rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/12—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains three hetero rings
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/06—Luminescent materials, e.g. electroluminescent or chemiluminescent containing organic luminescent materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10—Non-macromolecular compounds
    • C09K2211/1003—Carbocyclic compounds
    • C09K2211/1011—Condensed systems
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10—Non-macromolecular compounds
    • C09K2211/1018—Heterocyclic compounds
    • C09K2211/1025—Heterocyclic compounds characterised by ligands
    • C09K2211/1092—Heterocyclic compounds characterised by ligands containing sulfur as the only heteroatom
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12069—Organic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Thin Film Transistor (AREA)
CA2729334A 2008-07-02 2009-06-25 High performance solution processable seminconductor based on dithieno [2,3-d:2',3'-d']benzo[1,2-b:4,5-b'] dithiophene Abandoned CA2729334A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08159525 2008-07-02
EP08159525.8 2008-07-02
PCT/EP2009/057985 WO2010000670A1 (en) 2008-07-02 2009-06-25 High performance solution processable seminconductor based on dithieno [2,3-d:2',3'-d']benzo[1,2-b:4,5-b'] dithiophene

Publications (1)

Publication Number Publication Date
CA2729334A1 true CA2729334A1 (en) 2010-01-07

Family

ID=40912091

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2729334A Abandoned CA2729334A1 (en) 2008-07-02 2009-06-25 High performance solution processable seminconductor based on dithieno [2,3-d:2',3'-d']benzo[1,2-b:4,5-b'] dithiophene

Country Status (8)

Country Link
US (1) US8367717B2 (https=)
EP (1) EP2307424B1 (https=)
JP (1) JP2011526588A (https=)
KR (2) KR20110031364A (https=)
CN (1) CN102083838B (https=)
CA (1) CA2729334A1 (https=)
TW (1) TWI471328B (https=)
WO (1) WO2010000670A1 (https=)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2465626B (en) * 2008-11-28 2013-07-31 Cambridge Display Tech Ltd Organic semiconductors
WO2010079064A2 (en) 2008-12-18 2010-07-15 Basf Se Semiconductor materials prepared from dithienylvinylene copolymers
WO2010125011A2 (de) 2009-04-28 2010-11-04 Basf Se Verfahren zur herstellung von halbleitenden schichten
WO2010149451A1 (en) 2009-06-05 2010-12-29 Basf Se Fused bithiophene-vinylene polymers
WO2010146013A1 (en) 2009-06-15 2010-12-23 Basf Se Process for preparing regioregular poly-(3-substituted) thiophenes, selenophenes, thia- zoles and selenazoles
JP2011044686A (ja) 2009-07-22 2011-03-03 Ricoh Co Ltd 新規な有機半導体材料とそれを用いた電子デバイス
US8389670B2 (en) 2009-12-02 2013-03-05 Basf Se Dithienobenzo-thieno[3,2-B]thiophene-copolymer and its use as high performance solution processable semiconducting polymer
GB2492305B (en) 2010-04-19 2019-06-12 Merck Patent Gmbh Polymers of benzodithiophene and their use as organic semiconductors
JP2011256144A (ja) * 2010-06-10 2011-12-22 Yamamoto Chem Inc チオフェン化合物の製造方法
JP5811542B2 (ja) 2010-06-15 2015-11-11 株式会社リコー ジチエノベンゾジチオフェン誘導体からなる有機半導体材料前駆体、インク、絶縁部材、電荷輸送性部材の製造方法
JP5728990B2 (ja) * 2011-02-10 2015-06-03 住友化学株式会社 ジカルコゲノベンゾジピロール化合物、該化合物の製造方法、該化合物を含む薄膜及び該薄膜を含む有機半導体デバイス
US8394918B2 (en) 2011-02-28 2013-03-12 Corning Incorporated Five-ring fused heteroaromatic compounds and conjugated polymers thereof
JP2012188400A (ja) * 2011-03-11 2012-10-04 Tosoh Corp ジチエノベンゾジチオフェンの製造方法
JP5990870B2 (ja) * 2011-03-29 2016-09-14 東ソー株式会社 ジチエノベンゾジチオフェン誘導体溶液及び有機半導体層
JP5790069B2 (ja) * 2011-03-29 2015-10-07 東ソー株式会社 ジチエノベンゾジチオフェン誘導体の製造方法
JP2012206953A (ja) * 2011-03-29 2012-10-25 Tosoh Corp ジチエノベンゾジチオフェン誘導体及びこれを用いた有機薄膜トランジスタ
JP5891646B2 (ja) * 2011-08-11 2016-03-23 株式会社リコー 新規な有機半導体材料およびそれを用いた電子デバイス
JP6108329B2 (ja) * 2011-08-15 2017-04-05 国立大学法人東京工業大学 有機半導体材料
JP5834673B2 (ja) * 2011-09-16 2015-12-24 株式会社リコー ジチエノベンゾジチオフェン誘導体からなる有機発光材料、発光部材、有機発光デバイス
JP5948772B2 (ja) * 2011-09-21 2016-07-06 東ソー株式会社 ジチエノベンゾジチオフェン誘導体組成物及びこれを用いた有機薄膜トランジスタ
CN102585177B (zh) * 2012-03-08 2014-05-07 中国科学院化学研究所 光电活性二噻吩并苯并二噻吩类共轭聚合物及其制备方法与应用
JP2013201363A (ja) * 2012-03-26 2013-10-03 Ricoh Co Ltd 有機薄膜トランジスタ、有機薄膜トランジスタアレイおよび表示装置
JP6047969B2 (ja) * 2012-07-17 2016-12-21 東ソー株式会社 ジチエノベンゾジチオフェン誘導体溶液及びこれを用いた有機半導体層
CN103730581B (zh) * 2012-10-15 2016-05-18 乐金显示有限公司 有机发光装置和使用其的有机发光显示装置
KR101571590B1 (ko) 2012-11-21 2015-11-25 주식회사 두산 유기 화합물 및 이를 이용하는 유기 전계 발광 소자
WO2014082309A1 (zh) * 2012-11-30 2014-06-05 海洋王照明科技股份有限公司 含吡啶并[2,1,3]噻二唑单元的苯并二噻吩类共聚物及其制备方法与应用
WO2014082305A1 (zh) * 2012-11-30 2014-06-05 海洋王照明科技股份有限公司 含噻吩并[3,4-b]噻吩单元的苯并二噻吩类共聚物及其制备方法与应用
JP2014110347A (ja) * 2012-12-03 2014-06-12 Tosoh Corp 有機半導体層形成用材料
JP6056498B2 (ja) * 2013-01-21 2017-01-11 東ソー株式会社 ジチエノベンゾジフラン誘導体及びその製造方法
CN103242343B (zh) * 2013-05-15 2015-12-09 北京博如德工程技术研究有限公司 一种有机小分子半导体材料及其制备方法
CN103289062B (zh) * 2013-06-04 2015-10-28 孟鸿 一种网状低能级p型聚合物半导体材料及其制备方法与应用
JP6252032B2 (ja) * 2013-08-19 2017-12-27 東ソー株式会社 ベンゾジフラン誘導体及び有機薄膜トランジスタ
KR101595919B1 (ko) * 2013-08-30 2016-02-29 한국과학기술연구원 전도성 유기 반도체 화합물 및 이를 포함하는 유기태양전지
JP6016821B2 (ja) * 2014-01-10 2016-10-26 富士フイルム株式会社 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料
JP6331579B2 (ja) * 2014-03-28 2018-05-30 東ソー株式会社 ヘテロアセン誘導体、有機半導体層、及び有機薄膜トランジスタ
JP6295781B2 (ja) * 2014-03-28 2018-03-20 東ソー株式会社 ヘテロアセン誘導体、有機半導体層、及び有機薄膜トランジスタ
JP6318863B2 (ja) * 2014-05-29 2018-05-09 東ソー株式会社 ジチエノベンゾジチオフェン誘導体の製造方法
JP6344063B2 (ja) * 2014-05-29 2018-06-20 東ソー株式会社 ジチエノベンゾジチオフェン誘導体の製造方法
WO2016009890A1 (ja) 2014-07-18 2016-01-21 富士フイルム株式会社 有機半導体膜形成用組成物、並びに、有機半導体素子及びその製造方法
JP6372290B2 (ja) * 2014-10-07 2018-08-15 東ソー株式会社 １，４−ビス（３−ハロ−２−チエニル）−２，５−ジハロベンゼンの製造方法
CN104393174B (zh) * 2014-10-27 2017-02-15 中国科学院化学研究所 一种有机场效应晶体管及其在紫外光传感中的应用
EP3050887B1 (en) 2015-01-29 2017-06-28 Samsung Electronics Co., Ltd. Fused polycyclic heteroaromatic compound, organic thin film including compound and electronic device including organic thin film
JP6413863B2 (ja) * 2015-03-19 2018-10-31 東ソー株式会社 ヘテロアセン誘導体、有機半導体層、及び有機薄膜トランジスタ
JP6399956B2 (ja) * 2015-03-31 2018-10-03 東ソー株式会社 ヘテロアセン誘導体、その製造方法、有機半導体層、及び有機薄膜トランジスタ
JP6597087B2 (ja) * 2015-09-09 2019-10-30 Ｄｉｃ株式会社 有機化合物、その製造方法、それを含有する有機半導体材料及びそれを含有する有機トランジスタ
JP6484724B2 (ja) 2015-11-20 2019-03-13 富士フイルム株式会社 有機半導体組成物、有機半導体膜、有機薄膜トランジスタおよび有機薄膜トランジスタの製造方法
JP6689393B2 (ja) 2016-09-29 2020-04-28 富士フイルム株式会社 有機半導体膜形成用組成物、有機半導体膜及びその製造方法、並びに、有機半導体素子
WO2018061819A1 (ja) * 2016-09-29 2018-04-05 富士フイルム株式会社 微結晶有機半導体膜、有機半導体トランジスタ、及び有機半導体トランジスタの製造方法
KR102568844B1 (ko) * 2016-12-06 2023-08-21 주식회사 클랩 티에노-인데노-단량체 및 중합체
JP7034541B2 (ja) * 2017-07-18 2022-03-14 株式会社日本触媒 縮合多環式化合物
EP3434679B1 (en) 2017-07-28 2020-04-15 Samsung Electronics Co., Ltd. Organic compound, organic thin film, and electronic device
KR102464890B1 (ko) 2017-10-18 2022-11-07 삼성전자주식회사 축합다환 헤테로방향족 화합물, 유기 박막 및 전자 소자
CN111471055B (zh) * 2020-01-17 2021-07-16 中国长江三峡集团有限公司 苯并三噻吩的二维非富勒烯受体材料与用途
CN116133440A (zh) * 2022-12-22 2023-05-16 南京大学 一种高频有机平面结构整流二极管及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4423995A (en) * 1981-06-17 1984-01-03 Beloit Corporation Arrangement for automatic changeover between ream and skid loading in a continuous sheeter
US5198153A (en) * 1989-05-26 1993-03-30 International Business Machines Corporation Electrically conductive polymeric
JP3224829B2 (ja) 1991-08-15 2001-11-05 株式会社東芝 有機電界効果型素子
WO1996021659A1 (en) 1995-01-10 1996-07-18 University Of Technology, Sydney Organic semiconductor
US7605394B2 (en) * 2004-12-23 2009-10-20 Northwestern University Siloxane-polymer dielectric compositions and related organic field-effect transistors
JP2007088016A (ja) * 2005-09-20 2007-04-05 Konica Minolta Holdings Inc 有機半導体材料、有機半導体膜、有機半導体デバイス、有機薄膜トランジスタ及び有機エレクトロルミネッセンス素子
EP1961052B1 (en) * 2005-12-12 2013-03-06 Basf Se Organic semiconductors and their manufacture
WO2007075748A2 (en) * 2005-12-20 2007-07-05 Northwestern University Intercalated superlattice compositions and related methods for modulating dielectric property
JP5499422B2 (ja) 2006-06-28 2014-05-21 コニカミノルタ株式会社 有機半導体材料、有機半導体膜、有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法
JP5272345B2 (ja) * 2006-08-28 2013-08-28 東ソー株式会社 ヘテロアセン誘導体、テトラハロターフェニル誘導体及びそれらの製造方法
US8138355B2 (en) * 2006-08-28 2012-03-20 Tosoh Corporation Heteroacene derivative, tetrahaloterphenyl derivative, and processes for producing the same
WO2009016107A1 (en) 2007-07-30 2009-02-05 Basf Se Method for depositing a semiconducting layer from a liquid
JP5160842B2 (ja) * 2007-08-28 2013-03-13 山本化成株式会社 有機トランジスタ

Also Published As

Publication number Publication date
CN102083838A (zh) 2011-06-01
JP2011526588A (ja) 2011-10-13
US8367717B2 (en) 2013-02-05
EP2307424B1 (en) 2018-08-15
TWI471328B (zh) 2015-02-01
KR20110031364A (ko) 2011-03-25
KR20170010056A (ko) 2017-01-25
TW201008948A (en) 2010-03-01
KR101855051B1 (ko) 2018-05-04
WO2010000670A1 (en) 2010-01-07
CN102083838B (zh) 2016-05-25
US20110155248A1 (en) 2011-06-30
EP2307424A1 (en) 2011-04-13

Similar Documents

Publication Publication Date Title
US8367717B2 (en) High performance solution processable semiconductor based on dithieno [2,3-D:2′, 3′-D′]benzo[1,2-B:4,5-B′] dithiophene
US8389670B2 (en) Dithienobenzo-thieno[3,2-B]thiophene-copolymer and its use as high performance solution processable semiconducting polymer
US8598304B2 (en) Poly(5,5′bis(thiophen-2-yl)-benzo[2,1-b;3,4-b′]dithiophene) and its use as high performance solution processable semiconducting polymer
US8022214B2 (en) Organic semiconductor materials and precursors thereof
US7605225B2 (en) Silole-based polymers and semiconductor materials prepared from the same
EP2240528B1 (en) Semiconductor materials prepared from rylene-( -acceptor) copolymers
KR101680910B1 (ko) 반도체 재료 및 이의 제조 방법 및 사용
EP2438104B1 (en) Fused bithiophene-vinylene polymers
WO2012129511A2 (en) Semiconducting compounds and devices incorporating same
KR20130040830A (ko) 어닐링된 디티오펜 공중합체
US8993711B2 (en) Semiconducting polymers and optoelectronic devices incorporating same
KR101072477B1 (ko) 고분자 곁사슬에 알킬티오펜 기가 치환된 유기 반도체 화합물 및 이를 이용한 유기 박막 트랜지스터

Legal Events

Date Code Title Description
FZDE Discontinued