CA2547832A1 - Semiconductor light emitting devices and submounts and methods for forming the same - Google Patents

Semiconductor light emitting devices and submounts and methods for forming the same Download PDF

Info

Publication number
CA2547832A1
CA2547832A1 CA002547832A CA2547832A CA2547832A1 CA 2547832 A1 CA2547832 A1 CA 2547832A1 CA 002547832 A CA002547832 A CA 002547832A CA 2547832 A CA2547832 A CA 2547832A CA 2547832 A1 CA2547832 A1 CA 2547832A1
Authority
CA
Canada
Prior art keywords
light emitting
emitting device
cavity
submount
wavelength conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002547832A
Other languages
English (en)
French (fr)
Inventor
Bernd Keller
James Ibbetson
Peter S. Andrews
Gerald H. Negley
Norbert Hiller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2547832A1 publication Critical patent/CA2547832A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
CA002547832A 2003-12-09 2004-11-24 Semiconductor light emitting devices and submounts and methods for forming the same Abandoned CA2547832A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US52805403P 2003-12-09 2003-12-09
US60/528,054 2003-12-09
US10/987,894 2004-11-12
US10/987,894 US7518158B2 (en) 2003-12-09 2004-11-12 Semiconductor light emitting devices and submounts
PCT/US2004/039619 WO2005062393A2 (en) 2003-12-09 2004-11-24 Semiconductor light emitting devices and submounts and methods for forming the same

Publications (1)

Publication Number Publication Date
CA2547832A1 true CA2547832A1 (en) 2005-07-07

Family

ID=34636672

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002547832A Abandoned CA2547832A1 (en) 2003-12-09 2004-11-24 Semiconductor light emitting devices and submounts and methods for forming the same

Country Status (7)

Country Link
US (3) US7518158B2 (enExample)
EP (1) EP1692729B1 (enExample)
JP (2) JP4870572B2 (enExample)
KR (1) KR101097694B1 (enExample)
CA (1) CA2547832A1 (enExample)
TW (1) TW200531312A (enExample)
WO (1) WO2005062393A2 (enExample)

Families Citing this family (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7638346B2 (en) * 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US20060005763A1 (en) * 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7518158B2 (en) 2003-12-09 2009-04-14 Cree, Inc. Semiconductor light emitting devices and submounts
EP1587151A3 (en) * 2004-04-17 2011-09-28 LG Electronics, Inc. Semiconductor light emitting device and fabrication method thereof
US8154030B2 (en) * 2004-10-01 2012-04-10 Finisar Corporation Integrated diode in a silicon chip scale package
TW200637033A (en) * 2004-11-22 2006-10-16 Matsushita Electric Industrial Co Ltd Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device
US20060258031A1 (en) * 2005-01-26 2006-11-16 Bily Wang Wafer-level electro-optical semiconductor manufacture fabrication method
US20100301349A1 (en) * 2005-01-26 2010-12-02 Harvatek Corporation Wafer level led package structure for increasing light-emitting efficiency and heat-dissipating effect and method for manufacturing the same
US8079743B2 (en) * 2005-06-28 2011-12-20 Lighting Science Group Corporation Display backlight with improved light coupling and mixing
US7719021B2 (en) * 2005-06-28 2010-05-18 Lighting Science Group Corporation Light efficient LED assembly including a shaped reflective cavity and method for making same
CN100405621C (zh) * 2005-09-29 2008-07-23 上海乐金广电电子有限公司 白色光源的制造方法
EP1954857B1 (en) 2005-12-02 2018-09-26 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
JP2007165811A (ja) 2005-12-16 2007-06-28 Nichia Chem Ind Ltd 発光装置
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
US7528422B2 (en) * 2006-01-20 2009-05-05 Hymite A/S Package for a light emitting element with integrated electrostatic discharge protection
US7928462B2 (en) * 2006-02-16 2011-04-19 Lg Electronics Inc. Light emitting device having vertical structure, package thereof and method for manufacturing the same
KR100746783B1 (ko) * 2006-02-28 2007-08-06 엘지전자 주식회사 발광소자 패키지 및 그 제조방법
TWI303872B (en) * 2006-03-13 2008-12-01 Ind Tech Res Inst High power light emitting device assembly with esd preotection ability and the method of manufacturing the same
US8012257B2 (en) * 2006-03-30 2011-09-06 Crystal Is, Inc. Methods for controllable doping of aluminum nitride bulk crystals
US9034103B2 (en) * 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
KR101314713B1 (ko) * 2006-06-16 2013-10-07 신꼬오덴기 고교 가부시키가이샤 반도체 장치, 그 제조 방법, 및 기판
KR100854328B1 (ko) * 2006-07-07 2008-08-28 엘지전자 주식회사 발광 소자 패키지 및 그 제조방법
KR100845856B1 (ko) * 2006-12-21 2008-07-14 엘지전자 주식회사 발광 소자 패키지 및 그 제조방법
DE102007001706A1 (de) * 2007-01-11 2008-07-17 Osram Opto Semiconductors Gmbh Gehäuse für optoelektronisches Bauelement und Anordnung eines optoelektronischen Bauelementes in einem Gehäuse
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8323406B2 (en) * 2007-01-17 2012-12-04 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
CN101652832B (zh) * 2007-01-26 2011-06-22 晶体公司 厚的赝晶氮化物外延层
US8080833B2 (en) * 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
EP1988577B1 (en) * 2007-04-30 2017-04-05 Tridonic Jennersdorf GmbH Light emitting diode module with silicon platform
US8088220B2 (en) 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US8436371B2 (en) * 2007-05-24 2013-05-07 Cree, Inc. Microscale optoelectronic device packages
US7791096B2 (en) * 2007-06-08 2010-09-07 Koninklijke Philips Electronics N.V. Mount for a semiconductor light emitting device
TWM327545U (en) * 2007-07-09 2008-02-21 Everlight Electronics Co Ltd Improved light-emitting diode packaging structure
JP4809308B2 (ja) * 2007-09-21 2011-11-09 新光電気工業株式会社 基板の製造方法
JP4961617B2 (ja) * 2007-10-01 2012-06-27 新光電気工業株式会社 配線基板とその製造方法及び半導体装置
KR100896282B1 (ko) * 2007-11-01 2009-05-08 엘지전자 주식회사 발광 소자 패키지 및 그 제조방법
US8536584B2 (en) * 2007-11-14 2013-09-17 Cree, Inc. High voltage wire bond free LEDS
US7985970B2 (en) 2009-04-06 2011-07-26 Cree, Inc. High voltage low current surface-emitting LED
KR100999760B1 (ko) * 2008-09-26 2010-12-08 엘지이노텍 주식회사 발광소자 패키지 및 그 제조방법
US20100176507A1 (en) * 2009-01-14 2010-07-15 Hymite A/S Semiconductor-based submount with electrically conductive feed-throughs
KR101064026B1 (ko) * 2009-02-17 2011-09-08 엘지이노텍 주식회사 발광 디바이스 패키지 및 그 제조방법
US9093293B2 (en) 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
US8476668B2 (en) * 2009-04-06 2013-07-02 Cree, Inc. High voltage low current surface emitting LED
US20100314551A1 (en) * 2009-06-11 2010-12-16 Bettles Timothy J In-line Fluid Treatment by UV Radiation
US8084780B2 (en) * 2009-08-13 2011-12-27 Semileds Optoelectronics Co. Smart integrated semiconductor light emitting system including light emitting diodes and application specific integrated circuits (ASIC)
US8933467B2 (en) 2009-08-13 2015-01-13 SemiLEDs Optoelectronics Co., Ltd. Smart integrated semiconductor light emitting system including nitride based light emitting diodes (LED) and application specific integrated circuits (ASIC)
US9214456B2 (en) 2009-08-13 2015-12-15 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) system having lighting device and wireless control system
US20110042803A1 (en) * 2009-08-24 2011-02-24 Chen-Fu Chu Method For Fabricating A Through Interconnect On A Semiconductor Substrate
KR101092097B1 (ko) * 2009-08-31 2011-12-12 엘지이노텍 주식회사 발광 다이오드 패키지 및 그 제조방법
US7893445B2 (en) * 2009-11-09 2011-02-22 Cree, Inc. Solid state emitter package including red and blue emitters
DE102009053064A1 (de) * 2009-11-13 2011-05-19 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement mit Schutzdiodenstruktur und Verfahren zur Herstellung eines Dünnfilm-Halbleiterbauelements
US20110175218A1 (en) 2010-01-18 2011-07-21 Shiann-Ming Liou Package assembly having a semiconductor substrate
US20110186960A1 (en) 2010-02-03 2011-08-04 Albert Wu Techniques and configurations for recessed semiconductor substrates
CN105951177B (zh) 2010-06-30 2018-11-02 晶体公司 使用热梯度控制的大块氮化铝单晶的生长
JPWO2012002580A1 (ja) 2010-07-01 2013-09-02 シチズンホールディングス株式会社 Ｌｅｄ光源装置及びその製造方法
DE102010027679A1 (de) * 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
WO2012016377A1 (en) 2010-08-03 2012-02-09 Industrial Technology Research Institute Light emitting diode chip, light emitting diode package structure, and method for forming the same
US8455882B2 (en) 2010-10-15 2013-06-04 Cree, Inc. High efficiency LEDs
CN102456802A (zh) * 2010-10-19 2012-05-16 展晶科技(深圳)有限公司 发光二极管封装结构的制造方法
US9022608B2 (en) 2010-11-23 2015-05-05 Q Technology, Inc. Unlit LED circuit bypass element with system and method therefor
US8772817B2 (en) 2010-12-22 2014-07-08 Cree, Inc. Electronic device submounts including substrates with thermally conductive vias
KR101761834B1 (ko) 2011-01-28 2017-07-27 서울바이오시스 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
KR101766297B1 (ko) * 2011-02-16 2017-08-08 삼성전자 주식회사 발광소자 패키지 및 그 제조방법
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
KR20130011088A (ko) * 2011-07-20 2013-01-30 삼성전자주식회사 발광소자 패키지 및 그 제조방법
WO2013016355A1 (en) * 2011-07-25 2013-01-31 Cree, Inc. Monolithic multi-junction light emitting devices including multiple groups of light emitting diodes
WO2013027413A1 (ja) * 2011-08-25 2013-02-28 パナソニック株式会社 保護素子及びこれを用いた発光装置
TWI449466B (zh) 2011-12-26 2014-08-11 Ind Tech Res Inst 發光裝置
JP2014067934A (ja) * 2012-09-27 2014-04-17 Murata Mfg Co Ltd 実装基板の製造方法および実装基板
JP6275817B2 (ja) 2013-03-15 2018-02-07 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 仮像電子及び光学電子装置に対する平面コンタクト
DE102013105631A1 (de) * 2013-05-31 2014-12-04 Osram Opto Semiconductors Gmbh Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Bauteil
JP6454698B2 (ja) * 2013-06-28 2019-01-16 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 発光ダイオードデバイス
KR102130524B1 (ko) * 2013-08-28 2020-07-07 삼성디스플레이 주식회사 발광 소자 모듈, 이를 포함하는 백라이트 유닛 및 이를 포함하는 액정 표시 장치
DE102013110853B4 (de) * 2013-10-01 2020-12-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterchips
JP6539035B2 (ja) 2014-01-08 2019-07-03 ローム株式会社 チップ部品
US20150303179A1 (en) * 2014-04-18 2015-10-22 Toshiba Corporation Light Emitting Diode Assembly With Integrated Circuit Element
TWM488746U (zh) * 2014-07-14 2014-10-21 新世紀光電股份有限公司 發光模組
US20170104135A1 (en) * 2015-10-13 2017-04-13 Sensor Electronic Technology, Inc. Light Emitting Diode Mounting Structure
WO2018200685A2 (en) 2017-04-27 2018-11-01 Ecosense Lighting Inc. Methods and systems for an automated design, fulfillment, deployment and operation platform for lighting installations
KR102667851B1 (ko) * 2016-02-22 2024-05-23 삼성디스플레이 주식회사 디스플레이 장치
US10522532B2 (en) * 2016-05-27 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Through via extending through a group III-V layer
WO2018022061A1 (en) * 2016-07-28 2018-02-01 Victor Equipment Company Fuel tip with integrated flashback arrestor
CN107369677A (zh) * 2017-08-10 2017-11-21 中国科学院福建物质结构研究所 一种集成封装的三基色led器件及其制作方法和用途
US10770636B2 (en) * 2018-02-14 2020-09-08 Epistar Corporation Light emitting device and manufacturing method thereof
CN110164857B (zh) * 2018-02-14 2024-04-09 晶元光电股份有限公司 发光装置
DE102020126391A1 (de) 2020-10-08 2022-04-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Led package für uv licht und verfahren

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR880014692A (ko) * 1987-05-30 1988-12-24 강진구 반사경이 부착된 반도체 발광장치
US5027168A (en) * 1988-12-14 1991-06-25 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US4918497A (en) * 1988-12-14 1990-04-17 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US4966862A (en) * 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
US5210051A (en) * 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
US5416342A (en) * 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5338944A (en) * 1993-09-22 1994-08-16 Cree Research, Inc. Blue light-emitting diode with degenerate junction structure
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5604135A (en) * 1994-08-12 1997-02-18 Cree Research, Inc. Method of forming green light emitting diode in silicon carbide
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5631190A (en) * 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
BR9709998B1 (pt) 1996-06-26 2010-04-20 elemento de construção semicondutor, irradiador de luz, com elemento de conversão de luminescência
JPH1074986A (ja) 1996-06-27 1998-03-17 Natl Aerospace Lab 熱電変換素子、π型熱電変換素子対および熱電変換モジュールの各製造方法
JP3196823B2 (ja) 1997-06-11 2001-08-06 日本電気株式会社 半導体装置
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JPH11251644A (ja) * 1998-02-27 1999-09-17 Matsushita Electron Corp 半導体発光装置
JP3893735B2 (ja) * 1998-04-24 2007-03-14 松下電器産業株式会社 発光装置
JP4042213B2 (ja) * 1998-06-05 2008-02-06 松下電器産業株式会社 フルカラー半導体発光装置
JP2001015815A (ja) * 1999-04-28 2001-01-19 Sanken Electric Co Ltd 半導体発光装置
JP4350232B2 (ja) * 1999-10-05 2009-10-21 株式会社朝日ラバー 蛍光被覆体製造支援方法、及びその製造支援システム
US6303509B1 (en) * 1999-10-29 2001-10-16 Taiwan Semiconductor Manufacturing Company Method to calibrate the wafer transfer for oxide etcher (with clamp)
JP2002190622A (ja) 2000-12-22 2002-07-05 Sanken Electric Co Ltd 発光ダイオード用透光性蛍光カバー
US6747406B1 (en) * 2000-08-07 2004-06-08 General Electric Company LED cross-linkable phospor coating
US6635363B1 (en) * 2000-08-21 2003-10-21 General Electric Company Phosphor coating with self-adjusting distance from LED chip
US20020063520A1 (en) * 2000-11-29 2002-05-30 Huei-Che Yu Pre-formed fluorescent plate - LED device
JP5110744B2 (ja) 2000-12-21 2012-12-26 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 発光装置及びその製造方法
US20020084749A1 (en) * 2000-12-28 2002-07-04 Ayala Raul E. UV reflecting materials for LED lamps using UV-emitting diodes
JP2002220350A (ja) 2001-01-24 2002-08-09 Toshiba Corp 有害塩素化合物処理方法および処理装置
JP4737842B2 (ja) 2001-01-30 2011-08-03 京セラ株式会社 発光素子収納用パッケージの製造方法
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
TW490863B (en) * 2001-02-12 2002-06-11 Arima Optoelectronics Corp Manufacturing method of LED with uniform color temperature
JP2002314143A (ja) 2001-04-09 2002-10-25 Toshiba Corp 発光装置
US6958497B2 (en) * 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US20030102473A1 (en) * 2001-08-15 2003-06-05 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate
US6531328B1 (en) * 2001-10-11 2003-03-11 Solidlite Corporation Packaging of light-emitting diode
US7858403B2 (en) * 2001-10-31 2010-12-28 Cree, Inc. Methods and systems for fabricating broad spectrum light emitting devices
US6791116B2 (en) * 2002-04-30 2004-09-14 Toyoda Gosei Co., Ltd. Light emitting diode
JP2003347601A (ja) 2002-05-28 2003-12-05 Matsushita Electric Works Ltd 発光ダイオード照明装置
US6642550B1 (en) * 2002-08-26 2003-11-04 California Micro Devices Silicon sub-mount capable of single wire bonding and of providing ESD protection for light emitting diode devices
US7264378B2 (en) * 2002-09-04 2007-09-04 Cree, Inc. Power surface mount light emitting die package
US7244965B2 (en) * 2002-09-04 2007-07-17 Cree Inc, Power surface mount light emitting die package
ATE543221T1 (de) * 2002-09-19 2012-02-15 Cree Inc Leuchtstoffbeschichtete leuchtdioden mit verjüngten seitenwänden und herstellungsverfahren dafür
JP4201167B2 (ja) * 2002-09-26 2008-12-24 シチズン電子株式会社 白色発光装置の製造方法
US6936857B2 (en) * 2003-02-18 2005-08-30 Gelcore, Llc White light LED device
US6876008B2 (en) * 2003-07-31 2005-04-05 Lumileds Lighting U.S., Llc Mount for semiconductor light emitting device
US7518158B2 (en) * 2003-12-09 2009-04-14 Cree, Inc. Semiconductor light emitting devices and submounts
US7553683B2 (en) * 2004-06-09 2009-06-30 Philips Lumiled Lighting Co., Llc Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices
JP2006012868A (ja) * 2004-06-22 2006-01-12 Toshiba Corp 半導体発光素子用パッケージおよびそれを用いた半導体発光装置
JP4862274B2 (ja) * 2005-04-20 2012-01-25 パナソニック電工株式会社 発光装置の製造方法及び該発光装置を用いた発光装置ユニットの製造方法
JP4980640B2 (ja) * 2006-03-31 2012-07-18 三洋電機株式会社 照明装置

Also Published As

Publication number Publication date
JP2011193030A (ja) 2011-09-29
WO2005062393A2 (en) 2005-07-07
KR20070041663A (ko) 2007-04-19
EP1692729A2 (en) 2006-08-23
US20090159918A1 (en) 2009-06-25
US8138000B2 (en) 2012-03-20
JP2007535130A (ja) 2007-11-29
KR101097694B1 (ko) 2011-12-22
JP4870572B2 (ja) 2012-02-08
US8847257B2 (en) 2014-09-30
WO2005062393A3 (en) 2006-01-05
TW200531312A (en) 2005-09-16
EP1692729B1 (en) 2020-02-12
US20120138996A1 (en) 2012-06-07
US20050121686A1 (en) 2005-06-09
US7518158B2 (en) 2009-04-14

Similar Documents

Publication Publication Date Title
EP1692729B1 (en) Submount for a semiconductor light emitting device and manufacturing method thereof
EP1774598B1 (en) Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
US7977686B2 (en) Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
KR101010230B1 (ko) 발광 장치
EP2264797B1 (en) Light-emitting device
KR101092063B1 (ko) 발광소자 패키지 및 그 제조방법
KR100610650B1 (ko) 엘이디 패키지 및 그 제조방법
CN113039653B (zh) 发光二极管封装
US9583681B2 (en) Light emitter device packages, modules and methods
CN117374190A (zh) 发光器件封装
TWI395346B (zh) 發光元件的封裝結構
CN100474640C (zh) 半导体发光器件和子支架及其形成方法
JP2008124500A (ja) 発光装置
JP6978708B2 (ja) 半導体発光装置
KR100813070B1 (ko) 발광 소자 패키지 및 그 제조방법
JP2022010198A (ja) 半導体発光装置

Legal Events

Date Code Title Description
FZDE Discontinued