CA2434969A1 - Ajustage d'une resistance au moyen d'une tache laser uniforme faiblement dimensionnee emise par un laser ultraviolet a semi-conducteur - Google Patents
Ajustage d'une resistance au moyen d'une tache laser uniforme faiblement dimensionnee emise par un laser ultraviolet a semi-conducteur Download PDFInfo
- Publication number
- CA2434969A1 CA2434969A1 CA002434969A CA2434969A CA2434969A1 CA 2434969 A1 CA2434969 A1 CA 2434969A1 CA 002434969 A CA002434969 A CA 002434969A CA 2434969 A CA2434969 A CA 2434969A CA 2434969 A1 CA2434969 A1 CA 2434969A1
- Authority
- CA
- Canada
- Prior art keywords
- substrate
- energy density
- resistor
- laser
- gaussian
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000009966 trimming Methods 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 claims description 69
- 239000000758 substrate Substances 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 57
- 239000010408 film Substances 0.000 claims description 56
- 238000007493 shaping process Methods 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 8
- 229910010293 ceramic material Inorganic materials 0.000 claims description 7
- 238000003491 array Methods 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 claims description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 3
- 230000001902 propagating effect Effects 0.000 claims description 3
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- -1 tantalum nitride compound Chemical class 0.000 claims description 3
- 238000005755 formation reaction Methods 0.000 claims 7
- 238000004377 microelectronic Methods 0.000 claims 4
- 229910018487 Ni—Cr Inorganic materials 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- 230000007774 longterm Effects 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 239000000919 ceramic Substances 0.000 description 15
- 238000003384 imaging method Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
- 230000035515 penetration Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 5
- 238000002679 ablation Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003070 Statistical process control Methods 0.000 description 1
- 235000010599 Verbascum thapsus Nutrition 0.000 description 1
- 244000178289 Verbascum thapsus Species 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
- H01C17/242—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by laser
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/08—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by electric discharge, e.g. by spark erosion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Laser Beam Processing (AREA)
- Non-Adjustable Resistors (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26617201P | 2001-02-01 | 2001-02-01 | |
| US60/266,172 | 2001-02-01 | ||
| US30170601P | 2001-06-28 | 2001-06-28 | |
| US60/301,706 | 2001-06-28 | ||
| PCT/US2002/003006 WO2002060633A1 (fr) | 2001-02-01 | 2002-01-31 | Ajustage d'une resistance au moyen d'une tache laser uniforme faiblement dimensionnee emise par un laser ultraviolet a semi-conducteur |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2434969A1 true CA2434969A1 (fr) | 2002-08-08 |
Family
ID=26951663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002434969A Abandoned CA2434969A1 (fr) | 2001-02-01 | 2002-01-31 | Ajustage d'une resistance au moyen d'une tache laser uniforme faiblement dimensionnee emise par un laser ultraviolet a semi-conducteur |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JP2004519095A (fr) |
| KR (1) | KR100894025B1 (fr) |
| CN (1) | CN1232379C (fr) |
| CA (1) | CA2434969A1 (fr) |
| DE (1) | DE10295946B4 (fr) |
| GB (1) | GB2389555A (fr) |
| TW (1) | TW523837B (fr) |
| WO (1) | WO2002060633A1 (fr) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7358157B2 (en) * | 2002-03-27 | 2008-04-15 | Gsi Group Corporation | Method and system for high-speed precise laser trimming, scan lens system for use therein and electrical device produced thereby |
| WO2003082507A2 (fr) * | 2002-03-28 | 2003-10-09 | Gsi Lumonics Corporation | Procede et systeme pour micro-usinage precis, a grande vitesse d'un reseau de dispositifs |
| JP4664269B2 (ja) * | 2006-12-05 | 2011-04-06 | 住友重機械工業株式会社 | レーザ加工装置及びレーザ加工方法 |
| KR100858674B1 (ko) * | 2007-06-08 | 2008-09-16 | 주식회사 이오테크닉스 | 레이저를 이용한 저항체의 트리밍방법 |
| DE102009020272B4 (de) * | 2009-05-07 | 2014-09-11 | Tyco Electronics Amp Gmbh | Laserschweißsystem |
| US8742288B2 (en) * | 2011-06-15 | 2014-06-03 | Asm Technology Singapore Pte Ltd | Laser apparatus for singulation, and a method of singulation |
| CN105102171B (zh) * | 2013-02-13 | 2018-01-30 | 住友化学株式会社 | 光学部件贴合体的制造装置 |
| CN103441102B (zh) * | 2013-08-23 | 2015-08-26 | 华东光电集成器件研究所 | 利用陶瓷厚膜电阻器单元修复厚膜混合集成电路的方法 |
| CN104091664B (zh) * | 2014-06-12 | 2016-10-26 | 北京锋速精密设备有限公司 | 一种新型函数曲线跟随电阻修刻方法 |
| LT6428B (lt) * | 2015-10-02 | 2017-07-25 | Uab "Altechna R&D" | Skaidrių medžiagų lazerinis apdirbimo būdas ir įrenginys |
| CN109903943B (zh) * | 2019-04-29 | 2021-06-22 | 深圳市杰普特光电股份有限公司 | 阻值调整方法、装置、存储介质及设备 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63226005A (ja) | 1987-03-13 | 1988-09-20 | 松下電器産業株式会社 | 膜抵抗体のレ−ザ−トリミング法 |
| JPH0484686A (ja) * | 1990-07-27 | 1992-03-17 | Advantest Corp | レーザ加工装置 |
| US5104480A (en) * | 1990-10-12 | 1992-04-14 | General Electric Company | Direct patterning of metals over a thermally inefficient surface using a laser |
| US5233327A (en) * | 1991-07-01 | 1993-08-03 | International Business Machines Corporation | Active resistor trimming by differential annealing |
| JPH05347205A (ja) * | 1992-06-15 | 1993-12-27 | Tdk Corp | 電子部品及び電子部品製造方法 |
| JP3304130B2 (ja) * | 1992-07-27 | 2002-07-22 | 松下電器産業株式会社 | 角形薄膜チップ抵抗器の製造方法 |
| US5265114C1 (en) * | 1992-09-10 | 2001-08-21 | Electro Scient Ind Inc | System and method for selectively laser processing a target structure of one or more materials of a multimaterial multilayer device |
| JPH06251914A (ja) * | 1993-02-27 | 1994-09-09 | Taiyo Yuden Co Ltd | トリミング抵抗を有する回路基板の製造方法 |
| DE4336482A1 (de) * | 1993-10-26 | 1995-04-27 | Bosch Gmbh Robert | Verfahren zum Abgleichen eines magnetoresistiven Sensors |
| JPH0864407A (ja) * | 1994-08-26 | 1996-03-08 | Matsushita Electric Ind Co Ltd | 抵抗部品の製造方法 |
| US5685995A (en) | 1994-11-22 | 1997-11-11 | Electro Scientific Industries, Inc. | Method for laser functional trimming of films and devices |
| US5675310A (en) * | 1994-12-05 | 1997-10-07 | General Electric Company | Thin film resistors on organic surfaces |
| US5753391A (en) * | 1995-09-27 | 1998-05-19 | Micrel, Incorporated | Method of forming a resistor having a serpentine pattern through multiple use of an alignment keyed mask |
| JPH09232520A (ja) * | 1996-02-28 | 1997-09-05 | Matsushita Electric Works Ltd | 半導体装置及びその製造方法 |
| JPH09246023A (ja) * | 1996-03-14 | 1997-09-19 | Rohm Co Ltd | 薄膜抵抗体の抵抗値調整方法、薄膜型サーマルプリントヘッドの発熱体抵抗値の調整方法、および、薄膜型サーマルプリントヘッド |
| US5864430A (en) * | 1996-09-10 | 1999-01-26 | Sandia Corporation | Gaussian beam profile shaping apparatus, method therefor and evaluation thereof |
| JPH10149908A (ja) * | 1996-11-19 | 1998-06-02 | Rohm Co Ltd | 薄膜抵抗体の抵抗値調整方法、薄膜型サーマルプリントヘッドの発熱部の抵抗値調整方法、および薄膜型サーマルプリントヘッド |
| JPH11162702A (ja) | 1997-11-25 | 1999-06-18 | Taiyo Yuden Co Ltd | チップ部品 |
| WO1999040591A1 (fr) * | 1998-02-06 | 1999-08-12 | Electro Scientific Industries, Inc. | Technique d'ajustage par laser pour l'ablation de surface de composant resistif passif, dans laquelle un laser commute, solide et ultraviolet est utilise |
| JPH11320134A (ja) * | 1998-05-06 | 1999-11-24 | Canon Inc | レーザトリミング加工装置および加工方法 |
| JP3334684B2 (ja) * | 1999-06-29 | 2002-10-15 | 松下電器産業株式会社 | 電子部品及び無線端末装置 |
| TW482705B (en) * | 1999-05-28 | 2002-04-11 | Electro Scient Ind Inc | Beam shaping and projection imaging with solid state UV Gaussian beam to form blind vias |
-
2002
- 2002-01-31 GB GB0317857A patent/GB2389555A/en not_active Withdrawn
- 2002-01-31 JP JP2002560816A patent/JP2004519095A/ja active Pending
- 2002-01-31 CN CNB028042514A patent/CN1232379C/zh not_active Expired - Lifetime
- 2002-01-31 WO PCT/US2002/003006 patent/WO2002060633A1/fr active Application Filing
- 2002-01-31 CA CA002434969A patent/CA2434969A1/fr not_active Abandoned
- 2002-01-31 KR KR1020037010234A patent/KR100894025B1/ko not_active IP Right Cessation
- 2002-01-31 DE DE10295946T patent/DE10295946B4/de not_active Expired - Lifetime
- 2002-01-31 TW TW091101638A patent/TW523837B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB2389555A (en) | 2003-12-17 |
| TW523837B (en) | 2003-03-11 |
| CN1489504A (zh) | 2004-04-14 |
| JP2004519095A (ja) | 2004-06-24 |
| DE10295946B4 (de) | 2013-09-26 |
| DE10295946T5 (de) | 2004-04-22 |
| KR20030079981A (ko) | 2003-10-10 |
| KR100894025B1 (ko) | 2009-04-22 |
| CN1232379C (zh) | 2005-12-21 |
| WO2002060633A1 (fr) | 2002-08-08 |
| GB0317857D0 (en) | 2003-09-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |