CA1189984A - Contact structure for securing a semiconductor substrate to a mounting body - Google Patents
Contact structure for securing a semiconductor substrate to a mounting bodyInfo
- Publication number
- CA1189984A CA1189984A CA000406337A CA406337A CA1189984A CA 1189984 A CA1189984 A CA 1189984A CA 000406337 A CA000406337 A CA 000406337A CA 406337 A CA406337 A CA 406337A CA 1189984 A CA1189984 A CA 1189984A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- semiconductor substrate
- solder
- contact structure
- chromium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 title claims abstract description 35
- 229910000679 solder Inorganic materials 0.000 claims abstract description 52
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 16
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910000990 Ni alloy Inorganic materials 0.000 claims abstract description 11
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims abstract description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052709 silver Inorganic materials 0.000 claims abstract description 7
- 239000004332 silver Substances 0.000 claims abstract description 7
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 239000010931 gold Substances 0.000 claims abstract description 5
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 238000005476 soldering Methods 0.000 abstract description 13
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 230000003647 oxidation Effects 0.000 abstract description 7
- 238000007254 oxidation reaction Methods 0.000 abstract description 7
- 238000009736 wetting Methods 0.000 abstract description 7
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 238000004886 process control Methods 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract description 2
- 229910020938 Sn-Ni Inorganic materials 0.000 abstract 1
- 229910008937 Sn—Ni Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 74
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241001429719 Daubentonia madagascariensis Species 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009658 destructive testing Methods 0.000 description 1
- 238000009661 fatigue test Methods 0.000 description 1
- 210000003754 fetus Anatomy 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 235000015095 lager Nutrition 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
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- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPSHO56-104159/1981 | 1981-07-02 | ||
JP56104159A JPS586143A (ja) | 1981-07-02 | 1981-07-02 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1189984A true CA1189984A (en) | 1985-07-02 |
Family
ID=14373276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA000406337A Expired CA1189984A (en) | 1981-07-02 | 1982-06-30 | Contact structure for securing a semiconductor substrate to a mounting body |
Country Status (5)
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6038823A (ja) * | 1983-08-11 | 1985-02-28 | Nec Corp | 半導体装置 |
US4737839A (en) * | 1984-03-19 | 1988-04-12 | Trilogy Computer Development Partners, Ltd. | Semiconductor chip mounting system |
US4733127A (en) * | 1984-06-12 | 1988-03-22 | Sanyo Electric Co., Ltd. | Unit of arrayed light emitting diodes |
DE3426199C2 (de) * | 1984-07-17 | 1994-02-03 | Asea Brown Boveri | Überbrückungselement |
DE3446780A1 (de) * | 1984-12-21 | 1986-07-03 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren und verbindungswerkstoff zum metallischen verbinden von bauteilen |
US4954870A (en) * | 1984-12-28 | 1990-09-04 | Kabushiki Kaisha Toshiba | Semiconductor device |
US4929516A (en) * | 1985-03-14 | 1990-05-29 | Olin Corporation | Semiconductor die attach system |
US4872047A (en) * | 1986-11-07 | 1989-10-03 | Olin Corporation | Semiconductor die attach system |
US4978052A (en) * | 1986-11-07 | 1990-12-18 | Olin Corporation | Semiconductor die attach system |
JPS63119242A (ja) * | 1986-11-07 | 1988-05-23 | Toshiba Corp | 基板 |
US4953003A (en) * | 1987-05-21 | 1990-08-28 | Siemens Aktiengesellschaft | Power semiconductor device |
JPH0750813B2 (ja) * | 1988-05-23 | 1995-05-31 | 三菱電機株式会社 | 半導体レーザ素子用サブマウント |
US5010387A (en) * | 1988-11-21 | 1991-04-23 | Honeywell Inc. | Solder bonding material |
US5161729A (en) * | 1988-11-21 | 1992-11-10 | Honeywell Inc. | Package to semiconductor chip active interconnect site method |
US5066614A (en) * | 1988-11-21 | 1991-11-19 | Honeywell Inc. | Method of manufacturing a leadframe having conductive elements preformed with solder bumps |
JPH03208355A (ja) * | 1990-01-10 | 1991-09-11 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US5011792A (en) * | 1990-02-12 | 1991-04-30 | At&T Bell Laboratories | Method of making ohmic resistance WSb, contacts to III-V semiconductor materials |
JPH07101736B2 (ja) * | 1990-06-28 | 1995-11-01 | 日本電装株式会社 | 半導体装置およびその製造方法 |
US5489803A (en) * | 1991-03-22 | 1996-02-06 | Kabushiki Kaisha Tokai Rika Denki Seisakusho | Solder-bonded structure |
US5175609A (en) * | 1991-04-10 | 1992-12-29 | International Business Machines Corporation | Structure and method for corrosion and stress-resistant interconnecting metallurgy |
US5266522A (en) * | 1991-04-10 | 1993-11-30 | International Business Machines Corporation | Structure and method for corrosion and stress-resistant interconnecting metallurgy |
JPH0547812A (ja) * | 1991-08-19 | 1993-02-26 | Mitsubishi Electric Corp | 半導体装置 |
JP2878887B2 (ja) * | 1991-12-26 | 1999-04-05 | 株式会社豊田中央研究所 | 半導体電極構造体 |
EP0572151A3 (en) * | 1992-05-28 | 1995-01-18 | Avx Corp | Varistors with cathodically vaporized connections and method for depositing cathodically vaporized connections on varistors. |
US5565838A (en) * | 1992-05-28 | 1996-10-15 | Avx Corporation | Varistors with sputtered terminations |
US5234153A (en) * | 1992-08-28 | 1993-08-10 | At&T Bell Laboratories | Permanent metallic bonding method |
JP3372548B2 (ja) * | 1992-12-10 | 2003-02-04 | 株式会社豊田中央研究所 | 半田接合用表面処理構造体及びそれを用いた無フラックス半田付方法 |
US5459103A (en) * | 1994-04-18 | 1995-10-17 | Texas Instruments Incorporated | Method of forming lead frame with strengthened encapsulation adhesion |
DE19527209A1 (de) * | 1995-07-27 | 1997-01-30 | Philips Patentverwaltung | Halbleitervorrichtung |
JP3022765B2 (ja) * | 1996-03-27 | 2000-03-21 | 日本電気株式会社 | 半導体装置及び半導体素子の実装方法 |
DE19746835A1 (de) * | 1997-10-23 | 1999-05-06 | Jenoptik Jena Gmbh | Verfahren zum Montieren einer einseitig mit einer HR-Schicht beschichteten Laserkristallscheibe auf einen Kühlkörper und verfahrensgemäß hergestellte Schichtanordnung |
US6399152B1 (en) * | 2000-07-27 | 2002-06-04 | Goodrich Technology Corporation | Vacuum metalization process for chroming substrates |
US7150923B2 (en) * | 2000-10-24 | 2006-12-19 | Goodrich Technology Corporation | Chrome coating composition |
US7164585B2 (en) * | 2003-03-31 | 2007-01-16 | Intel Corporation | Thermal interface apparatus, systems, and methods |
US6896976B2 (en) * | 2003-04-09 | 2005-05-24 | International Rectifier Corporation | Tin antimony solder for MOSFET with TiNiAg back metal |
RU2375787C2 (ru) * | 2005-12-27 | 2009-12-10 | Дагестанский государственный технический университет (ДГТУ) | Способ посадки кремниевого кристалла на основание корпуса |
JP5123633B2 (ja) * | 2007-10-10 | 2013-01-23 | ルネサスエレクトロニクス株式会社 | 半導体装置および接続材料 |
RU2359360C1 (ru) * | 2008-01-22 | 2009-06-20 | Государственное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) | Способ посадки кремниевого кристалла |
RU2534439C2 (ru) * | 2013-01-09 | 2014-11-27 | Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) | Способ формирования контакта к стоковой области полупроводникового прибора |
RU2534449C2 (ru) * | 2013-03-05 | 2014-11-27 | Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) | Способ формирования контакта к коллекторной области кремниевого транзистора |
JP2015056646A (ja) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | 半導体装置及び半導体モジュール |
US10791761B2 (en) * | 2017-08-17 | 2020-10-06 | Rai Strategic Holdings, Inc. | Microtextured liquid transport element for aerosol delivery device |
JP7166818B2 (ja) * | 2018-07-13 | 2022-11-08 | スタンレー電気株式会社 | 光半導体素子 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2801375A (en) * | 1955-08-01 | 1957-07-30 | Westinghouse Electric Corp | Silicon semiconductor devices and processes for making them |
US3266127A (en) * | 1964-01-27 | 1966-08-16 | Ibm | Method of forming contacts on semiconductors |
US3386894A (en) * | 1964-09-28 | 1968-06-04 | Northern Electric Co | Formation of metallic contacts |
US3381256A (en) * | 1966-02-04 | 1968-04-30 | Monsanto Co | Resistor and contact means on a base |
GB1149606A (en) * | 1967-02-27 | 1969-04-23 | Motorola Inc | Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses |
US3562040A (en) * | 1967-05-03 | 1971-02-09 | Itt | Method of uniformally and rapidly etching nichrome |
US3706915A (en) * | 1970-03-09 | 1972-12-19 | Gen Electric | Semiconductor device with low impedance bond |
GB1360213A (en) * | 1971-12-16 | 1974-07-17 | Lucas Industries Ltd | Method of mounting a semi-conductor chip on a heat sink |
US3922385A (en) * | 1973-07-02 | 1975-11-25 | Gen Motors Corp | Solderable multilayer contact for silicon semiconductor |
JPS5165659U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1974-11-18 | 1976-05-24 | ||
JPS531858A (en) * | 1976-06-29 | 1978-01-10 | Kokusai Electric Co Ltd | Method of forming thin film circuit |
US4176443A (en) * | 1977-03-08 | 1979-12-04 | Sgs-Ates Componenti Elettronici S.P.A. | Method of connecting semiconductor structure to external circuits |
JPS54127572A (en) * | 1978-03-28 | 1979-10-03 | Oki Electric Ind Co Ltd | Thin film circuit |
-
1981
- 1981-07-02 JP JP56104159A patent/JPS586143A/ja active Granted
-
1982
- 1982-06-18 US US06/390,113 patent/US4480261A/en not_active Expired - Lifetime
- 1982-06-30 CA CA000406337A patent/CA1189984A/en not_active Expired
- 1982-07-01 EP EP82105893A patent/EP0070435B1/en not_active Expired
- 1982-07-01 DE DE8282105893T patent/DE3277953D1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0070435B1 (en) | 1988-01-07 |
EP0070435A2 (en) | 1983-01-26 |
US4480261A (en) | 1984-10-30 |
EP0070435A3 (en) | 1984-11-21 |
JPH0145220B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-10-03 |
JPS586143A (ja) | 1983-01-13 |
DE3277953D1 (en) | 1988-02-11 |
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