BRPI1010508A2 - "alvo, processos de produção de um alvo por projeção térmica e de uma camada, camada, tela plana de exibição, componente semicondutor, e, utilização de uma camada" - Google Patents
"alvo, processos de produção de um alvo por projeção térmica e de uma camada, camada, tela plana de exibição, componente semicondutor, e, utilização de uma camada"Info
- Publication number
- BRPI1010508A2 BRPI1010508A2 BRPI1010508A BRPI1010508A BRPI1010508A2 BR PI1010508 A2 BRPI1010508 A2 BR PI1010508A2 BR PI1010508 A BRPI1010508 A BR PI1010508A BR PI1010508 A BRPI1010508 A BR PI1010508A BR PI1010508 A2 BRPI1010508 A2 BR PI1010508A2
- Authority
- BR
- Brazil
- Prior art keywords
- layer
- target
- processes
- producing
- flat panel
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0682—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/06—Metallic material
- C23C4/067—Metallic material containing free particles of non-metal elements, e.g. carbon, silicon, boron, phosphorus or arsenic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/06—Metallic material
- C23C4/08—Metallic material containing only metal elements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/137—Spraying in vacuum or in an inert atmosphere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Coating By Spraying Or Casting (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Powder Metallurgy (AREA)
- Furnace Housings, Linings, Walls, And Ceilings (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0952392A FR2944295B1 (fr) | 2009-04-10 | 2009-04-10 | Cible a base de molybdene et procede d'elaboration par projection thermique d'une cible |
PCT/FR2010/050703 WO2010116111A1 (fr) | 2009-04-10 | 2010-04-12 | Cible à base de molybdène et procédé d'élaboration par projection thermique d'une cible |
Publications (2)
Publication Number | Publication Date |
---|---|
BRPI1010508A2 true BRPI1010508A2 (pt) | 2016-03-15 |
BRPI1010508B1 BRPI1010508B1 (pt) | 2020-04-07 |
Family
ID=40984826
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI1010508A BRPI1010508B1 (pt) | 2009-04-10 | 2010-04-12 | alvo à base de molibdênio |
Country Status (17)
Country | Link |
---|---|
US (1) | US9951413B2 (pt) |
EP (1) | EP2417279B1 (pt) |
JP (1) | JP5667163B2 (pt) |
KR (1) | KR101754430B1 (pt) |
CN (2) | CN102388159A (pt) |
AU (1) | AU2010233525B2 (pt) |
BR (1) | BRPI1010508B1 (pt) |
CA (1) | CA2757900C (pt) |
EA (1) | EA027665B1 (pt) |
ES (1) | ES2823762T3 (pt) |
FR (1) | FR2944295B1 (pt) |
MX (1) | MX2011010585A (pt) |
MY (1) | MY156266A (pt) |
PL (1) | PL2417279T3 (pt) |
SG (1) | SG175159A1 (pt) |
UA (1) | UA108472C2 (pt) |
WO (1) | WO2010116111A1 (pt) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT12292U3 (de) * | 2011-10-18 | 2013-03-15 | Plansee Se | Rohrtarget |
KR101309648B1 (ko) | 2011-12-27 | 2013-09-17 | 재단법인 포항산업과학연구원 | Rf 플라즈마를 이용한 몰리브덴 금속타겟 제조방법 |
AU2012362827B2 (en) | 2011-12-30 | 2016-12-22 | Scoperta, Inc. | Coating compositions |
KR101600169B1 (ko) * | 2013-03-12 | 2016-03-04 | 히타치 긴조쿠 가부시키가이샤 | 전자 부품용 금속 박막 및 금속 박막 형성용 Mo 합금 스퍼터링 타깃재 |
CN103774101A (zh) * | 2014-02-14 | 2014-05-07 | 山东昊轩电子陶瓷材料有限公司 | 超低氧含量热喷涂管靶及其制备方法 |
CN104894449A (zh) * | 2015-06-10 | 2015-09-09 | 深圳市威勒达科技开发有限公司 | 一种钒钼合金靶材及其制备方法 |
CN104946950A (zh) * | 2015-06-10 | 2015-09-30 | 深圳市威勒达科技开发有限公司 | 一种钒钨合金靶材及其制备方法 |
JP6999081B2 (ja) | 2015-09-04 | 2022-01-18 | エリコン メテコ(ユーエス)インコーポレイテッド | 非クロム及び低クロム耐摩耗性合金 |
CN106567048B (zh) * | 2016-11-10 | 2018-11-27 | 洛阳科威钨钼有限公司 | 一种大型高纯钼合金旋转靶材的制造方法 |
CN106555094A (zh) * | 2016-11-24 | 2017-04-05 | 苏州华意铭铄激光科技有限公司 | 一种航空航天用高温复合结构件 |
US20180244535A1 (en) | 2017-02-24 | 2018-08-30 | BWXT Isotope Technology Group, Inc. | Titanium-molybdate and method for making the same |
WO2018173517A1 (ja) * | 2017-03-23 | 2018-09-27 | 三井金属鉱業株式会社 | スパッタリングターゲット及びその製造方法 |
JP2022505878A (ja) | 2018-10-26 | 2022-01-14 | エリコン メテコ(ユーエス)インコーポレイテッド | 耐食性かつ耐摩耗性のニッケル系合金 |
CN110453127B (zh) * | 2019-09-09 | 2020-07-10 | 安泰天龙钨钼科技有限公司 | 一种多元复合强化钼合金及其制备方法 |
JP2021048239A (ja) * | 2019-09-18 | 2021-03-25 | キオクシア株式会社 | 半導体装置およびその製造方法 |
CN111304610A (zh) * | 2020-03-19 | 2020-06-19 | 河北宏靶科技有限公司 | 一种钛硅钼合金靶材及其制备方法 |
CN113174573A (zh) * | 2021-04-29 | 2021-07-27 | 宁波江丰电子材料股份有限公司 | 一种钼钛合金靶坯的制备方法 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4356073A (en) | 1981-02-12 | 1982-10-26 | Shatterproof Glass Corporation | Magnetron cathode sputtering apparatus |
US4619697A (en) * | 1984-08-30 | 1986-10-28 | Mitsubishi Kinzoku Kabushiki Kaisha | Sputtering target material and process for producing the same |
JPS6167768A (ja) * | 1984-09-12 | 1986-04-07 | Hitachi Ltd | スパツタタ−ゲツト |
US4750932A (en) * | 1985-04-15 | 1988-06-14 | Gte Products Corporation | Refractory metal silicide sputtering target |
US5354446A (en) * | 1988-03-03 | 1994-10-11 | Asahi Glass Company Ltd. | Ceramic rotatable magnetron sputtering cathode target and process for its production |
DE4031489A1 (de) * | 1990-10-05 | 1992-04-09 | Ver Glaswerke Gmbh | Verfahren zum beschichten von glasscheiben mit hilfe eines thermischen spritzverfahrens |
JPH06122956A (ja) * | 1992-10-13 | 1994-05-06 | Matsushita Electric Ind Co Ltd | プラズマ溶射方法及び溶射製膜装置 |
DE4339345C2 (de) * | 1993-11-18 | 1995-08-24 | Difk Deutsches Inst Fuer Feuer | Verfahren zum Auftragen einer Hartstoffschicht mittels Plasmaspritzen |
JPH0820863A (ja) * | 1995-06-12 | 1996-01-23 | Toshiba Corp | シリサイド膜およびその膜を使用した半導体装置 |
EP0960955A1 (en) | 1998-05-26 | 1999-12-01 | Universiteit Gent | Method and apparatus for flame spraying to form a tough coating |
JP2000064033A (ja) * | 1998-08-19 | 2000-02-29 | Tokyo Tungsten Co Ltd | スパッタリングターゲット |
JP2003342720A (ja) * | 2002-05-20 | 2003-12-03 | Nippon Steel Corp | スパッタリング用モリブデンターゲットの製造方法及びモリブデンターゲット |
ES2371070T3 (es) * | 2003-02-24 | 2011-12-27 | Tekna Plasma Systems Inc. | Procedimiento para fabricar un blanco de pulverización catódica. |
US20050230244A1 (en) * | 2004-03-31 | 2005-10-20 | Hitachi Metals, Ltd | Sputter target material and method of producing the same |
US20050279630A1 (en) * | 2004-06-16 | 2005-12-22 | Dynamic Machine Works, Inc. | Tubular sputtering targets and methods of flowforming the same |
US20060042728A1 (en) * | 2004-08-31 | 2006-03-02 | Brad Lemon | Molybdenum sputtering targets |
US8088232B2 (en) | 2004-08-31 | 2012-01-03 | H.C. Starck Inc. | Molybdenum tubular sputtering targets with uniform grain size and texture |
JP4851700B2 (ja) * | 2004-09-30 | 2012-01-11 | 株式会社東芝 | 真空成膜装置用部品及び真空成膜装置 |
WO2006041730A2 (en) | 2004-10-07 | 2006-04-20 | Atmel Corporation | Method and system for a programming approach for a nonvolatile electronic device |
FR2881757B1 (fr) * | 2005-02-08 | 2007-03-30 | Saint Gobain | Procede d'elaboration par projection thermique d'une cible a base de silicium et de zirconium |
CA2607091C (en) | 2005-05-05 | 2014-08-12 | H.C. Starck Gmbh | Coating process for manufacture or reprocessing of sputter targets and x-ray anodes |
JP4479006B2 (ja) * | 2005-07-28 | 2010-06-09 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
EP2024530A1 (en) * | 2006-06-02 | 2009-02-18 | Bekaert Advanced Coatings | A rotatable sputter target |
US20080078268A1 (en) * | 2006-10-03 | 2008-04-03 | H.C. Starck Inc. | Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof |
US8293035B2 (en) * | 2006-10-12 | 2012-10-23 | Air Products And Chemicals, Inc. | Treatment method, system and product |
US8197894B2 (en) * | 2007-05-04 | 2012-06-12 | H.C. Starck Gmbh | Methods of forming sputtering targets |
JP4894008B2 (ja) * | 2007-05-09 | 2012-03-07 | 日立金属株式会社 | MoNb系焼結スパッタリングターゲット材の製造方法 |
FR2944293B1 (fr) * | 2009-04-10 | 2012-05-18 | Saint Gobain Coating Solutions | Procede d'elaboration par projection thermique d'une cible |
-
2009
- 2009-04-10 FR FR0952392A patent/FR2944295B1/fr not_active Expired - Fee Related
-
2010
- 2010-04-12 EA EA201171235A patent/EA027665B1/ru not_active IP Right Cessation
- 2010-04-12 CN CN201080016267XA patent/CN102388159A/zh active Pending
- 2010-04-12 EP EP10723659.8A patent/EP2417279B1/fr active Active
- 2010-04-12 SG SG2011073921A patent/SG175159A1/en unknown
- 2010-04-12 BR BRPI1010508A patent/BRPI1010508B1/pt not_active IP Right Cessation
- 2010-04-12 US US13/259,975 patent/US9951413B2/en active Active
- 2010-04-12 PL PL10723659T patent/PL2417279T3/pl unknown
- 2010-04-12 ES ES10723659T patent/ES2823762T3/es active Active
- 2010-04-12 CA CA2757900A patent/CA2757900C/fr active Active
- 2010-04-12 MY MYPI2011004838A patent/MY156266A/en unknown
- 2010-04-12 CN CN201610839475.9A patent/CN107083528A/zh active Pending
- 2010-04-12 WO PCT/FR2010/050703 patent/WO2010116111A1/fr active Application Filing
- 2010-04-12 JP JP2012504063A patent/JP5667163B2/ja active Active
- 2010-04-12 AU AU2010233525A patent/AU2010233525B2/en not_active Ceased
- 2010-04-12 MX MX2011010585A patent/MX2011010585A/es active IP Right Grant
- 2010-04-12 KR KR1020117023563A patent/KR101754430B1/ko active IP Right Grant
- 2010-12-04 UA UAA201113243A patent/UA108472C2/ru unknown
Also Published As
Publication number | Publication date |
---|---|
WO2010116111A1 (fr) | 2010-10-14 |
EP2417279A1 (fr) | 2012-02-15 |
AU2010233525B2 (en) | 2016-05-19 |
CA2757900A1 (fr) | 2010-10-14 |
MY156266A (en) | 2016-01-29 |
KR101754430B1 (ko) | 2017-07-05 |
CN102388159A (zh) | 2012-03-21 |
BRPI1010508B1 (pt) | 2020-04-07 |
AU2010233525A1 (en) | 2011-11-17 |
JP2012523497A (ja) | 2012-10-04 |
ES2823762T3 (es) | 2021-05-10 |
CN107083528A (zh) | 2017-08-22 |
EA201171235A1 (ru) | 2012-05-30 |
CA2757900C (fr) | 2014-09-30 |
FR2944295B1 (fr) | 2014-08-15 |
PL2417279T3 (pl) | 2021-03-08 |
KR20120023604A (ko) | 2012-03-13 |
FR2944295A1 (fr) | 2010-10-15 |
EA027665B1 (ru) | 2017-08-31 |
JP5667163B2 (ja) | 2015-02-12 |
SG175159A1 (en) | 2011-11-28 |
US9951413B2 (en) | 2018-04-24 |
MX2011010585A (es) | 2012-01-25 |
EP2417279B1 (fr) | 2020-07-22 |
US20120063947A1 (en) | 2012-03-15 |
UA108472C2 (en) | 2015-05-12 |
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