BR112018003233B1 - Pacote de dispositivo integrado compreendendo ponte em camada litográfica - Google Patents
Pacote de dispositivo integrado compreendendo ponte em camada litográfica Download PDFInfo
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- BR112018003233B1 BR112018003233B1 BR112018003233-6A BR112018003233A BR112018003233B1 BR 112018003233 B1 BR112018003233 B1 BR 112018003233B1 BR 112018003233 A BR112018003233 A BR 112018003233A BR 112018003233 B1 BR112018003233 B1 BR 112018003233B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5385—Assembly of a plurality of insulating substrates
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
- H01L25/0655—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next to each other
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
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- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5383—Multilayer substrates
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15192—Resurf arrangement of the internal vias
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Geometry (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/832,363 | 2015-08-21 | ||
| US14/832,363 US9368450B1 (en) | 2015-08-21 | 2015-08-21 | Integrated device package comprising bridge in litho-etchable layer |
| PCT/US2016/035895 WO2017034641A1 (en) | 2015-08-21 | 2016-06-03 | Integrated device package comprising bridge in litho-etchable layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| BR112018003233A2 BR112018003233A2 (en) | 2018-09-25 |
| BR112018003233B1 true BR112018003233B1 (pt) | 2023-01-31 |
Family
ID=56100638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR112018003233-6A BR112018003233B1 (pt) | 2015-08-21 | 2016-06-03 | Pacote de dispositivo integrado compreendendo ponte em camada litográfica |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9368450B1 (enExample) |
| EP (1) | EP3338303B1 (enExample) |
| JP (1) | JP6748186B2 (enExample) |
| KR (1) | KR102541861B1 (enExample) |
| CN (1) | CN107924905B (enExample) |
| BR (1) | BR112018003233B1 (enExample) |
| CA (1) | CA2991933C (enExample) |
| WO (1) | WO2017034641A1 (enExample) |
Families Citing this family (80)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9583426B2 (en) | 2014-11-05 | 2017-02-28 | Invensas Corporation | Multi-layer substrates suitable for interconnection between circuit modules |
| US10283492B2 (en) | 2015-06-23 | 2019-05-07 | Invensas Corporation | Laminated interposers and packages with embedded trace interconnects |
| US10438881B2 (en) * | 2015-10-29 | 2019-10-08 | Marvell World Trade Ltd. | Packaging arrangements including high density interconnect bridge |
| US10163856B2 (en) * | 2015-10-30 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked integrated circuit structure and method of forming |
| US9852994B2 (en) | 2015-12-14 | 2017-12-26 | Invensas Corporation | Embedded vialess bridges |
| US11089689B2 (en) * | 2016-04-02 | 2021-08-10 | Intel Corporation | Fine feature formation techniques for printed circuit boards |
| US20170287838A1 (en) | 2016-04-02 | 2017-10-05 | Intel Corporation | Electrical interconnect bridge |
| WO2018063316A1 (en) * | 2016-09-30 | 2018-04-05 | Robert Alan May | Device and method of very high density routing used with embedded multi-die interconnect bridge |
| US11277922B2 (en) * | 2016-10-06 | 2022-03-15 | Advanced Micro Devices, Inc. | Circuit board with bridge chiplets |
| KR102666151B1 (ko) * | 2016-12-16 | 2024-05-17 | 삼성전자주식회사 | 반도체 패키지 |
| US11004824B2 (en) | 2016-12-22 | 2021-05-11 | Intel Corporation | Scalable embedded silicon bridge via pillars in lithographically defined vias, and methods of making same |
| US20180240778A1 (en) * | 2017-02-22 | 2018-08-23 | Intel Corporation | Embedded multi-die interconnect bridge with improved power delivery |
| US10468374B2 (en) | 2017-03-31 | 2019-11-05 | Intel Corporation | Die interconnect substrates, a semiconductor device and a method for forming a die interconnect substrate |
| US11476185B2 (en) | 2017-04-01 | 2022-10-18 | Intel Corporation | Innovative way to design silicon to overcome reticle limit |
| US10593563B2 (en) * | 2017-04-13 | 2020-03-17 | Invensas Corporation | Fan-out wafer level package with resist vias |
| US10403599B2 (en) | 2017-04-27 | 2019-09-03 | Invensas Corporation | Embedded organic interposers for high bandwidth |
| US11233025B2 (en) * | 2017-05-31 | 2022-01-25 | Futurewei Technologies, Inc. | Merged power pad for improving integrated circuit power delivery |
| US10943869B2 (en) | 2017-06-09 | 2021-03-09 | Apple Inc. | High density interconnection using fanout interposer chiplet |
| US10727198B2 (en) * | 2017-06-30 | 2020-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor package and method manufacturing the same |
| US10373893B2 (en) * | 2017-06-30 | 2019-08-06 | Intel Corporation | Embedded bridge with through-silicon vias |
| US10622311B2 (en) * | 2017-08-10 | 2020-04-14 | International Business Machines Corporation | High-density interconnecting adhesive tape |
| KR102069659B1 (ko) | 2017-08-31 | 2020-01-23 | 해성디에스 주식회사 | 반도체 패키지 기판 제조방법 및 이를 이용하여 제조된 반도체 패키지 기판 |
| US10658281B2 (en) * | 2017-09-29 | 2020-05-19 | Intel Corporation | Integrated circuit substrate and method of making |
| US10867954B2 (en) * | 2017-11-15 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect chips |
| US10784202B2 (en) * | 2017-12-01 | 2020-09-22 | International Business Machines Corporation | High-density chip-to-chip interconnection with silicon bridge |
| US10651126B2 (en) * | 2017-12-08 | 2020-05-12 | Applied Materials, Inc. | Methods and apparatus for wafer-level die bridge |
| WO2019132970A1 (en) * | 2017-12-29 | 2019-07-04 | Intel Corporation | Microelectronic assemblies |
| US11508663B2 (en) * | 2018-02-02 | 2022-11-22 | Marvell Israel (M.I.S.L) Ltd. | PCB module on package |
| KR102101712B1 (ko) * | 2018-03-21 | 2020-04-21 | (주)심텍 | 브릿지 기판을 포함하는 인쇄회로기판 |
| US10742217B2 (en) | 2018-04-12 | 2020-08-11 | Apple Inc. | Systems and methods for implementing a scalable system |
| US11088123B1 (en) * | 2018-05-15 | 2021-08-10 | Marvell Israel (M.I.S.L) Ltd. | Package system having laterally offset and ovelapping chip packages |
| US20200020634A1 (en) * | 2018-07-16 | 2020-01-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package and method of manufacturing the same |
| KR102560697B1 (ko) | 2018-07-31 | 2023-07-27 | 삼성전자주식회사 | 인터포저를 가지는 반도체 패키지 |
| CN110896066B (zh) * | 2018-09-13 | 2022-08-30 | 欣兴电子股份有限公司 | 具有内埋基板的线路载板及其制作方法与芯片封装结构 |
| US10937762B2 (en) * | 2018-10-04 | 2021-03-02 | iCometrue Company Ltd. | Logic drive based on multichip package using interconnection bridge |
| US10916494B2 (en) * | 2019-01-02 | 2021-02-09 | Qualcomm Incorporated | Device comprising first solder interconnects aligned in a first direction and second solder interconnects aligned in a second direction |
| CN111599687B (zh) * | 2019-02-21 | 2022-11-15 | 奥特斯科技(重庆)有限公司 | 具有高刚度的超薄部件承载件及其制造方法 |
| US12205877B2 (en) | 2019-02-21 | 2025-01-21 | AT&S(Chongqing) Company Limited | Ultra-thin component carrier having high stiffness and method of manufacturing the same |
| US11164818B2 (en) * | 2019-03-25 | 2021-11-02 | Intel Corporation | Inorganic-based embedded-die layers for modular semiconductive devices |
| TWI707408B (zh) * | 2019-04-10 | 2020-10-11 | 力成科技股份有限公司 | 天線整合式封裝結構及其製造方法 |
| US10998262B2 (en) * | 2019-04-15 | 2021-05-04 | Intel Corporation | Stripped redistrubution-layer fabrication for package-top embedded multi-die interconnect bridge |
| US11581292B2 (en) | 2019-06-10 | 2023-02-14 | Marvell Israel (M.I.S.L) Ltd. | IC package with top-side memory module |
| US12341129B2 (en) * | 2019-06-13 | 2025-06-24 | Intel Corporation | Substrateless double-sided embedded multi-die interconnect bridge |
| TW202111907A (zh) | 2019-09-05 | 2021-03-16 | 力成科技股份有限公司 | 以矽中介層作為互連橋的封裝晶片結構 |
| US11393759B2 (en) * | 2019-10-04 | 2022-07-19 | International Business Machines Corporation | Alignment carrier for interconnect bridge assembly |
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| US9368450B1 (en) | 2016-06-14 |
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| JP2018523925A (ja) | 2018-08-23 |
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