BE890348A - Procedes et appareils pour la fabrication de cellules solaires a heterojonction a couches minces et cellules solaires ainsi produites - Google Patents
Procedes et appareils pour la fabrication de cellules solaires a heterojonction a couches minces et cellules solaires ainsi produitesInfo
- Publication number
- BE890348A BE890348A BE2/59353A BE2059353A BE890348A BE 890348 A BE890348 A BE 890348A BE 2/59353 A BE2/59353 A BE 2/59353A BE 2059353 A BE2059353 A BE 2059353A BE 890348 A BE890348 A BE 890348A
- Authority
- BE
- Belgium
- Prior art keywords
- semiconductor layer
- transient
- type
- layer
- solar cells
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 9
- 239000000463 material Substances 0.000 abstract 7
- 230000001052 transient effect Effects 0.000 abstract 5
- 239000011149 active material Substances 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 2
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052951 chalcopyrite Inorganic materials 0.000 abstract 1
- 239000000470 constituent Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
- H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/063—Gp II-IV-VI compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/12—Photocathodes-Cs coated and solar cell
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Light Receiving Elements (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/221,761 US4335266A (en) | 1980-12-31 | 1980-12-31 | Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE890348A true BE890348A (fr) | 1982-01-04 |
Family
ID=22829266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE2/59353A BE890348A (fr) | 1980-12-31 | 1981-09-15 | Procedes et appareils pour la fabrication de cellules solaires a heterojonction a couches minces et cellules solaires ainsi produites |
Country Status (16)
Country | Link |
---|---|
US (1) | US4335266A (fr) |
EP (1) | EP0067860B1 (fr) |
JP (1) | JPH0557746B2 (fr) |
AT (1) | ATE44334T1 (fr) |
AU (1) | AU537139B2 (fr) |
BE (1) | BE890348A (fr) |
CA (2) | CA1185347A (fr) |
DE (1) | DE3177076D1 (fr) |
DK (1) | DK387082A (fr) |
ES (1) | ES8308157A1 (fr) |
GB (2) | GB2106316B (fr) |
GR (1) | GR76957B (fr) |
IL (1) | IL64676A (fr) |
IT (1) | IT1172197B (fr) |
NO (1) | NO822922L (fr) |
WO (1) | WO1982002459A1 (fr) |
Families Citing this family (159)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL69756A0 (en) * | 1982-09-24 | 1983-12-30 | Energy Conversion Devices Inc | System and method for making large area photovoltaic devices |
US4534335A (en) * | 1983-08-01 | 1985-08-13 | Rice Frederick H | Solar heat collector and reflector |
US4523051A (en) * | 1983-09-27 | 1985-06-11 | The Boeing Company | Thin films of mixed metal compounds |
US4581108A (en) * | 1984-01-06 | 1986-04-08 | Atlantic Richfield Company | Process of forming a compound semiconductive material |
DE3415712A1 (de) * | 1984-04-27 | 1985-11-07 | Bloss, Werner Heinz, Prof. Dr.-Ing., 7065 Winterbach | Duennschicht-fotoelement |
US4638111A (en) * | 1985-06-04 | 1987-01-20 | Atlantic Richfield Company | Thin film solar cell module |
US4612411A (en) * | 1985-06-04 | 1986-09-16 | Atlantic Richfield Company | Thin film solar cell with ZnO window layer |
US4798660A (en) * | 1985-07-16 | 1989-01-17 | Atlantic Richfield Company | Method for forming Cu In Se2 films |
JPS6220381A (ja) * | 1985-07-16 | 1987-01-28 | シーメンス ソーラー インダストリーズ,エル.ピー. | 二セレン化インジウム銅半導体膜の製造方法 |
JPS62158863A (ja) * | 1985-12-30 | 1987-07-14 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 被膜形成装置 |
US4684761A (en) * | 1986-04-09 | 1987-08-04 | The Boeing Company | Method for making graded I-III-VI2 semiconductors and solar cell obtained thereby |
US5045409A (en) * | 1987-11-27 | 1991-09-03 | Atlantic Richfield Company | Process for making thin film solar cell |
US5141564A (en) * | 1988-05-03 | 1992-08-25 | The Boeing Company | Mixed ternary heterojunction solar cell |
US4915745A (en) * | 1988-09-22 | 1990-04-10 | Atlantic Richfield Company | Thin film solar cell and method of making |
US5028274A (en) * | 1989-06-07 | 1991-07-02 | International Solar Electric Technology, Inc. | Group I-III-VI2 semiconductor films for solar cell application |
JPH0387073A (ja) * | 1989-06-27 | 1991-04-11 | Matsushita Electric Ind Co Ltd | 半導体発光素子 |
US5078803A (en) * | 1989-09-22 | 1992-01-07 | Siemens Solar Industries L.P. | Solar cells incorporating transparent electrodes comprising hazy zinc oxide |
SE468372B (sv) * | 1991-04-24 | 1992-12-21 | Stiftelsen Im Inst Foer Mikroe | Foerfarande foer tillverkning av tunnfilmssolceller varvid deponering av skikt paa substrat sker i roterbar (cylindrisk) baeranordning |
JPH05262504A (ja) * | 1991-09-27 | 1993-10-12 | Matsushita Electric Ind Co Ltd | 化合物半導体、その薄膜製造方法及びそれを用いた半導体装置 |
EP0574716B1 (fr) * | 1992-05-19 | 1996-08-21 | Matsushita Electric Industrial Co., Ltd. | Méthode de préparation d'un composé de type chalcopyrite |
DE4229399C2 (de) * | 1992-09-03 | 1999-05-27 | Deutsch Zentr Luft & Raumfahrt | Verfahren und Vorrichtung zum Herstellen einer Funktionsstruktur eines Halbleiterbauelements |
US5578503A (en) * | 1992-09-22 | 1996-11-26 | Siemens Aktiengesellschaft | Rapid process for producing a chalcopyrite semiconductor on a substrate |
JP3064701B2 (ja) * | 1992-10-30 | 2000-07-12 | 松下電器産業株式会社 | カルコパイライト型化合物薄膜の製造方法 |
US5474939A (en) * | 1992-12-30 | 1995-12-12 | Siemens Solar Industries International | Method of making thin film heterojunction solar cell |
US5436204A (en) * | 1993-04-12 | 1995-07-25 | Midwest Research Institute | Recrystallization method to selenization of thin-film Cu(In,Ga)Se2 for semiconductor device applications |
WO1994027328A1 (fr) * | 1993-05-07 | 1994-11-24 | Siemens Solar Industries International, Inc. | Procede de conversion au moins partielle de couches minces semi-conductrices du type i-iii-vi¿2? |
US5633033A (en) * | 1994-04-18 | 1997-05-27 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing chalcopyrite film |
DE19504754A1 (de) * | 1995-02-03 | 1996-08-08 | Univ Leipzig | Photovoltaische und photoelektrische Bauteile |
US5918111A (en) * | 1995-03-15 | 1999-06-29 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus for manufacturing chalcopyrite semiconductor thin films |
US5772431A (en) * | 1995-05-22 | 1998-06-30 | Yazaki Corporation | Thin-film solar cell manufacturing apparatus and manufacturing method |
US5730852A (en) * | 1995-09-25 | 1998-03-24 | Davis, Joseph & Negley | Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells |
JP3249408B2 (ja) * | 1996-10-25 | 2002-01-21 | 昭和シェル石油株式会社 | 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置 |
JP3249407B2 (ja) * | 1996-10-25 | 2002-01-21 | 昭和シェル石油株式会社 | カルコパイライト系多元化合物半導体薄膜光吸収層からなる薄膜太陽電池 |
US6121541A (en) * | 1997-07-28 | 2000-09-19 | Bp Solarex | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
US6107562A (en) * | 1998-03-24 | 2000-08-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor thin film, method for manufacturing the same, and solar cell using the same |
US6259016B1 (en) | 1999-03-05 | 2001-07-10 | Matsushita Electric Industrial Co., Ltd. | Solar cell |
DE19921514A1 (de) * | 1999-05-10 | 2000-11-30 | Ist Inst Fuer Solartechnologie | Dünnschichtsolarzelle auf der Basis der Ia/IIIb/VIa- Verbindungshalbleiter mit Potentialbarriere innerhalb der photoaktiven polykristallinen Absorberschicht und Verfahren zu ihrer Herstellung |
JP4662616B2 (ja) | 2000-10-18 | 2011-03-30 | パナソニック株式会社 | 太陽電池 |
GB0127113D0 (en) * | 2001-11-10 | 2002-01-02 | Univ Sheffield | Copper indium based thin film photovoltaic devices and methods of making the same |
JP4055053B2 (ja) * | 2002-03-26 | 2008-03-05 | 本田技研工業株式会社 | 化合物薄膜太陽電池およびその製造方法 |
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DE10256909B3 (de) * | 2002-11-30 | 2004-07-29 | Hahn-Meitner-Institut Berlin Gmbh | Verfahren zur Herstellung einer Chalkogenid-Halbleiterschicht mit optischer in-situ-Prozesskontrolle und Vorrichtung zur Verfahrensdurchführung |
WO2005034247A1 (fr) * | 2003-09-03 | 2005-04-14 | Midwest Research Institute | Cellules solaires zno/cu(inga)se2 preparees par dopage zn en phase vapeur |
EP1521308A1 (fr) * | 2003-10-02 | 2005-04-06 | Scheuten Glasgroep | Composant semiconducteur sphérique ou granulaire utilisé pour des cellules solaires et son procédé de fabrication; procédé de fabrication d'une cellule solaire avec ce composant semiconducteur et cellule solaire |
US7667133B2 (en) * | 2003-10-29 | 2010-02-23 | The University Of Toledo | Hybrid window layer for photovoltaic cells |
PT1548845E (pt) * | 2003-12-22 | 2007-03-30 | Scheuten Glasgroep B V | Processo para tratar partículas de pó |
SE0400582D0 (sv) * | 2004-03-05 | 2004-03-05 | Forskarpatent I Uppsala Ab | Method for in-line process control of the CIGS process |
WO2005101510A2 (fr) * | 2004-04-16 | 2005-10-27 | The University Of Toledo | Passivation de shuntage electrochimique photo-assistee pour cellule photovoltaique |
CH697007A5 (fr) * | 2004-05-03 | 2008-03-14 | Solaronix Sa | Procédé pour produire un composé chalcopyrite en couche mince. |
WO2006053127A2 (fr) * | 2004-11-10 | 2006-05-18 | Daystar Technologies, Inc. | Procede et dispositif photovoltaique utilisant une couche contenant un alcalin |
WO2006053128A2 (fr) * | 2004-11-10 | 2006-05-18 | Daystar Technologies, Inc. | Systeme utilisant une plaque pour la formation de cellules solaires a film mince |
WO2006110613A2 (fr) * | 2005-04-11 | 2006-10-19 | The University Of Toledo | Cellule d'electrolyse photovoltaique integree |
US7442413B2 (en) * | 2005-11-18 | 2008-10-28 | Daystar Technologies, Inc. | Methods and apparatus for treating a work piece with a vaporous element |
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EP2333841A3 (fr) * | 2006-04-18 | 2013-06-05 | Dow Corning Corporation | Dispositif photovoltaïque à base de tellurure de cadmium et méthode de fabrication |
US8017860B2 (en) * | 2006-05-15 | 2011-09-13 | Stion Corporation | Method and structure for thin film photovoltaic materials using bulk semiconductor materials |
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US20100096009A1 (en) * | 2007-03-13 | 2010-04-22 | Mitsubishi Chemical Corporation | Porous silica, optical-purpose layered product and composition, and method for producing porous silica |
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US8058092B2 (en) | 2007-09-28 | 2011-11-15 | Stion Corporation | Method and material for processing iron disilicide for photovoltaic application |
US20090087939A1 (en) * | 2007-09-28 | 2009-04-02 | Stion Corporation | Column structure thin film material using metal oxide bearing semiconductor material for solar cell devices |
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WO2009046178A1 (fr) * | 2007-10-02 | 2009-04-09 | University Of Delaware | Couches absorbantes photovoltaïques i-iii-vi2 |
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WO2009073501A2 (fr) * | 2007-11-30 | 2009-06-11 | University Of Toledo | Système de diagnostic et traitement de dispositifs photovoltaïques et autres dispositifs à semi-conducteur |
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US8772078B1 (en) | 2008-03-03 | 2014-07-08 | Stion Corporation | Method and system for laser separation for exclusion region of multi-junction photovoltaic materials |
US8075723B1 (en) | 2008-03-03 | 2011-12-13 | Stion Corporation | Laser separation method for manufacture of unit cells for thin film photovoltaic materials |
US8575478B2 (en) * | 2008-03-07 | 2013-11-05 | Showa Shell Sekiyu K.K. | Integrated structure of CIS based solar cell |
WO2009120974A2 (fr) * | 2008-03-28 | 2009-10-01 | University Of Toledo | Système destiné à remplir de manière sélective des trous d'aiguille, des shunts faibles et/ou des chemins de découpe dans des dispositifs photovoltaïques et cellules photovoltaïques réalisées ainsi |
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-
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- 1980-12-31 US US06/221,761 patent/US4335266A/en not_active Ceased
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1981
- 1981-09-15 BE BE2/59353A patent/BE890348A/fr not_active IP Right Cessation
- 1981-12-21 JP JP82500445A patent/JPH0557746B2/ja not_active Expired - Lifetime
- 1981-12-21 AU AU80812/82A patent/AU537139B2/en not_active Ceased
- 1981-12-21 EP EP82900474A patent/EP0067860B1/fr not_active Expired
- 1981-12-21 DE DE8282900474T patent/DE3177076D1/de not_active Expired
- 1981-12-21 WO PCT/US1981/001714 patent/WO1982002459A1/fr active IP Right Grant
- 1981-12-21 GB GB08222854A patent/GB2106316B/en not_active Expired
- 1981-12-21 AT AT82900474T patent/ATE44334T1/de not_active IP Right Cessation
- 1981-12-21 GR GR66851A patent/GR76957B/el unknown
- 1981-12-29 IT IT50022/81A patent/IT1172197B/it active
- 1981-12-30 CA CA000393443A patent/CA1185347A/fr not_active Expired
- 1981-12-30 IL IL64676A patent/IL64676A/xx not_active IP Right Cessation
- 1981-12-30 ES ES508455A patent/ES8308157A1/es not_active Expired
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1982
- 1982-08-30 NO NO822922A patent/NO822922L/no unknown
- 1982-08-30 DK DK387082A patent/DK387082A/da not_active Application Discontinuation
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1984
- 1984-08-16 GB GB08420810A patent/GB2144914B/en not_active Expired
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1985
- 1985-02-27 CA CA000475358A patent/CA1201192A/fr not_active Expired
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ES508455A0 (es) | 1983-08-01 |
GB8420810D0 (en) | 1984-09-19 |
CA1201192A (fr) | 1986-02-25 |
US4335266A (en) | 1982-06-15 |
GB2106316B (en) | 1985-09-25 |
NO822922L (no) | 1982-08-30 |
ATE44334T1 (de) | 1989-07-15 |
GB2106316A (en) | 1983-04-07 |
EP0067860A1 (fr) | 1982-12-29 |
EP0067860A4 (fr) | 1985-07-30 |
IL64676A (en) | 1985-01-31 |
IL64676A0 (en) | 1982-03-31 |
JPS57502196A (fr) | 1982-12-09 |
CA1185347A (fr) | 1985-04-09 |
JPH0557746B2 (fr) | 1993-08-24 |
AU537139B2 (en) | 1984-06-07 |
GB2144914A (en) | 1985-03-13 |
GR76957B (fr) | 1984-09-04 |
EP0067860B1 (fr) | 1989-06-28 |
ES8308157A1 (es) | 1983-08-01 |
DE3177076D1 (en) | 1989-08-03 |
AU8081282A (en) | 1982-08-02 |
GB2144914B (en) | 1985-10-09 |
IT1172197B (it) | 1987-06-18 |
DK387082A (da) | 1982-08-30 |
IT8150022A0 (it) | 1981-12-29 |
WO1982002459A1 (fr) | 1982-07-22 |
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RE | Patent lapsed |
Owner name: THE BOEING CY Effective date: 19930930 |