AU2002229001A1 - Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same - Google Patents

Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same

Info

Publication number
AU2002229001A1
AU2002229001A1 AU2002229001A AU2900102A AU2002229001A1 AU 2002229001 A1 AU2002229001 A1 AU 2002229001A1 AU 2002229001 A AU2002229001 A AU 2002229001A AU 2900102 A AU2900102 A AU 2900102A AU 2002229001 A1 AU2002229001 A1 AU 2002229001A1
Authority
AU
Australia
Prior art keywords
silicon carbide
devices
methods
edge termination
incorporating same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002229001A
Other languages
English (en)
Inventor
Ranbir Singh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of AU2002229001A1 publication Critical patent/AU2002229001A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Ceramic Products (AREA)
AU2002229001A 2000-11-28 2001-11-06 Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same Abandoned AU2002229001A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/723,710 2000-11-28
US09/723,710 US6573128B1 (en) 2000-11-28 2000-11-28 Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
PCT/US2001/047924 WO2002045177A2 (en) 2000-11-28 2001-11-06 Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same

Publications (1)

Publication Number Publication Date
AU2002229001A1 true AU2002229001A1 (en) 2002-06-11

Family

ID=24907346

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002229001A Abandoned AU2002229001A1 (en) 2000-11-28 2001-11-06 Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same

Country Status (8)

Country Link
US (2) US6573128B1 (zh)
EP (1) EP1354362B1 (zh)
JP (1) JP4115275B2 (zh)
KR (1) KR100816541B1 (zh)
CN (1) CN100370627C (zh)
AU (1) AU2002229001A1 (zh)
CA (1) CA2425787C (zh)
WO (1) WO2002045177A2 (zh)

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Also Published As

Publication number Publication date
EP1354362A2 (en) 2003-10-22
JP4115275B2 (ja) 2008-07-09
CN1663053A (zh) 2005-08-31
EP1354362B1 (en) 2013-01-16
US20030045045A1 (en) 2003-03-06
CN100370627C (zh) 2008-02-20
JP2004515080A (ja) 2004-05-20
WO2002045177A2 (en) 2002-06-06
KR20040055717A (ko) 2004-06-26
US6573128B1 (en) 2003-06-03
WO2002045177A3 (en) 2003-01-30
CA2425787C (en) 2014-09-30
US6673662B2 (en) 2004-01-06
KR100816541B1 (ko) 2008-03-26
CA2425787A1 (en) 2002-06-06

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