AU2002230986A1 - Trench schottky barrier rectifier and method of making the same - Google Patents

Trench schottky barrier rectifier and method of making the same

Info

Publication number
AU2002230986A1
AU2002230986A1 AU2002230986A AU3098602A AU2002230986A1 AU 2002230986 A1 AU2002230986 A1 AU 2002230986A1 AU 2002230986 A AU2002230986 A AU 2002230986A AU 3098602 A AU3098602 A AU 3098602A AU 2002230986 A1 AU2002230986 A1 AU 2002230986A1
Authority
AU
Australia
Prior art keywords
making
same
schottky barrier
trench schottky
barrier rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002230986A
Inventor
John E. Amato
Fwu-Iuan Hshieh
Koon Chong So
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Semiconductor Inc
Original Assignee
General Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Semiconductor Inc filed Critical General Semiconductor Inc
Publication of AU2002230986A1 publication Critical patent/AU2002230986A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
AU2002230986A 2000-12-15 2001-12-13 Trench schottky barrier rectifier and method of making the same Abandoned AU2002230986A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/737,357 US6420768B1 (en) 2000-12-15 2000-12-15 Trench schottky barrier rectifier and method of making the same
US09/737,357 2000-12-15
PCT/US2001/048914 WO2002049118A2 (en) 2000-12-15 2001-12-13 Trench schottky barrier rectifier and method of making the same

Publications (1)

Publication Number Publication Date
AU2002230986A1 true AU2002230986A1 (en) 2002-06-24

Family

ID=24963592

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002230986A Abandoned AU2002230986A1 (en) 2000-12-15 2001-12-13 Trench schottky barrier rectifier and method of making the same

Country Status (9)

Country Link
US (2) US6420768B1 (en)
EP (1) EP1346417B1 (en)
JP (1) JP4440542B2 (en)
KR (1) KR100794716B1 (en)
CN (1) CN1315197C (en)
AU (1) AU2002230986A1 (en)
DE (1) DE60118432T2 (en)
TW (1) TW511191B (en)
WO (1) WO2002049118A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6707127B1 (en) * 2000-08-31 2004-03-16 General Semiconductor, Inc. Trench schottky rectifier
FR2850791B1 (en) * 2003-01-30 2006-01-21 St Microelectronics Sa VERTICAL UNIPOLAR COMPONENT
FR2864345B1 (en) * 2003-12-18 2006-03-31 St Microelectronics Sa IMPLEMENTING THE PERIPHERY OF A MOS TRENCH SCHOTTKY DIODE
CN100424836C (en) * 2006-12-20 2008-10-08 鞍山市华辰电力器件有限公司 Process for producing rectifier tube chip by one time coating source full spreading
KR100824205B1 (en) * 2006-12-26 2008-04-21 매그나칩 반도체 유한회사 Dmos transistor and manufacturing method thereof
KR101067953B1 (en) * 2009-05-12 2011-09-26 주식회사 케이이씨 Trench mosfet with embedded schottky barrier diode and manufacture method thereof
TWI469221B (en) * 2009-06-26 2015-01-11 Pfc Device Co Trench schottky diode and manufacturing mehtod thereof
US9577079B2 (en) 2009-12-17 2017-02-21 Infineon Technologies Ag Tunnel field effect transistors
CN101800252B (en) * 2010-03-04 2012-05-30 无锡新洁能功率半导体有限公司 Groove-shaped Schottky barrier rectifier and manufacture method thereof
JP2011243948A (en) * 2010-04-22 2011-12-01 Elpida Memory Inc Semiconductor device and method of manufacturing the same
US20130168765A1 (en) * 2012-01-04 2013-07-04 Vishay General Semiconductor Llc Trench dmos device with improved termination structure for high voltage applications
CN103383969B (en) * 2012-05-06 2017-04-26 朱江 Schottky device and manufacturing method thereof
MY185098A (en) * 2014-08-29 2021-04-30 Mimos Berhad A method for manufacturing a large schottky diode
KR102147640B1 (en) 2018-04-25 2020-08-25 심요섭 Mobile cremation of the Dead Animal
CN109378312B (en) * 2018-09-14 2020-08-18 西安交通大学 Body-doped diamond-based normally-off field effect transistor and preparation method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082795A (en) * 1986-12-05 1992-01-21 General Electric Company Method of fabricating a field effect semiconductor device having a self-aligned structure
US4982260A (en) 1989-10-02 1991-01-01 General Electric Company Power rectifier with trenches
US5262668A (en) 1992-08-13 1993-11-16 North Carolina State University At Raleigh Schottky barrier rectifier including schottky barrier regions of differing barrier heights
US5365102A (en) 1993-07-06 1994-11-15 North Carolina State University Schottky barrier rectifier with MOS trench
US6078090A (en) * 1997-04-02 2000-06-20 Siliconix Incorporated Trench-gated Schottky diode with integral clamping diode
US5612567A (en) 1996-05-13 1997-03-18 North Carolina State University Schottky barrier rectifiers and methods of forming same
US5998833A (en) * 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics

Also Published As

Publication number Publication date
JP4440542B2 (en) 2010-03-24
US6558984B2 (en) 2003-05-06
CN1315197C (en) 2007-05-09
US6420768B1 (en) 2002-07-16
US20020074578A1 (en) 2002-06-20
TW511191B (en) 2002-11-21
WO2002049118A2 (en) 2002-06-20
US20020074613A1 (en) 2002-06-20
KR100794716B1 (en) 2008-01-15
JP2004521487A (en) 2004-07-15
DE60118432D1 (en) 2006-05-18
CN1529912A (en) 2004-09-15
KR20040033283A (en) 2004-04-21
WO2002049118A3 (en) 2003-04-03
DE60118432T2 (en) 2006-09-21
EP1346417B1 (en) 2006-03-29
EP1346417A2 (en) 2003-09-24

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