CN103383969B - Schottky device and manufacturing method thereof - Google Patents
Schottky device and manufacturing method thereof Download PDFInfo
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- CN103383969B CN103383969B CN201210151837.7A CN201210151837A CN103383969B CN 103383969 B CN103383969 B CN 103383969B CN 201210151837 A CN201210151837 A CN 201210151837A CN 103383969 B CN103383969 B CN 103383969B
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Abstract
The invention discloses a Schottky device. A semiconductor device of the Schottky device is provided with a terminal of a groove structure, the manufacturing process of the device is simplified, moreover, a junction terminal extension structure is led to the groove structure, and the device is made to have the good reverse blocking characteristic. The invention further provides a manufacturing method of the Schottky device.
Description
Technical field
The present invention relates to a kind of schottky device, the invention further relates to a kind of preparation method of schottky device.
Background technology
Power semiconductor is widely used on power management and power supply application, is related specifically to the half of schottky junction
Conductor device has become the important trend of device development, and schottky device is fast etc. with the low unlatching turn-off speed of positive cut-in voltage
Advantage.
Schottky diode can be the most frequently used for plane figure by various different topologies manufactures, traditional
Planer schottky diode has complex manufacturing process, needs third photo etching etching process to complete the production system of device
Make.
The content of the invention
The present invention is proposed for the problems referred to above, there is provided a kind of schottky device and preparation method thereof.
A kind of schottky device, it is characterised in that：Including：Substrate layer, is semi-conducting material；Drift layer, is the first conduction
The semi-conducting material of type, on substrate layer；Groove structure, groove is located in device edge drift layer, trench wall table
There is insulant in face, abuts against trench bottom regions and is provided with the second conduction type semi-conducting material；Schottky barrier junction, positioned at ditch
The drift layer surface of groove terminal structure parcel.A kind of preparation method of schottky device, it is characterised in that：Comprise the steps：
The semiconductor material layer of the first conduction type is formed by epitaxial growth on substrate layer；The first passivation layer is formed on surface,
Trench region surface to be formed removes the first passivation layer；Semi-conducting material is performed etching, groove is formed；Implanted dopant, is moved back
Ignition technique；The passivation layer of erosion removal device surface first；Metal is deposited in device surface, is sintered to form Schottky barrier
Knot.
The semiconductor device of the present invention has the terminal of groove structure, simplifies the manufacturing process of device, and will tie eventually
End extended structure is incorporated in groove structure so that device has good reverse blocking voltage.
Description of the drawings
Fig. 1 is a kind of schottky device generalized section of the present invention；
Wherein,
1st, substrate layer；
2nd, silicon dioxide；
3rd, the first conducting semiconductor material；
4th, the second conducting semiconductor material；
5th, schottky barrier junction；
10th, upper surface metal level；
11st, lower surface metal layer.
Specific embodiment
Embodiment 1
Fig. 1 is a kind of schottky device profile of the present invention, and with reference to Fig. 1 the quasiconductor dress of the present invention is described in detail
Put.
A kind of schottky device, including：Substrate layer 1, is N conductive type semiconductor silicon materials, the doping content of phosphorus atoms
For 1E19/CM3, in the lower surface of substrate layer 1, by the extraction electrode of lower surface metal layer 11；First conducting semiconductor material 3, position
It is the semiconductor silicon material of N conduction types on substrate layer 1, the doping content of phosphorus atoms is 1E16/CM3；Second conductive half
Conductor material 4, is the semiconductor silicon material of P conduction types positioned at channel bottom；Schottky barrier junction 5, positioned at first conductive half
The surface of conductor material 3, is the silicide of semiconductor silicon material and barrier metal formation；Silicon dioxide 2, positioned at trench wall；
Device upper surface has upper surface metal level 10, is that device draws another electrode.
Its processing technology comprises the steps：
The first step, on the surface of substrate layer 1 the first conducting semiconductor material layer 3 is epitaxially formed；
Second step, surface deposition silicon nitride carries out lithography corrosion process, and semiconductor material surface removes partial silicon nitride；
3rd step, dry etching removes partial denudation semiconductor silicon material and forms groove；
4th step, injects boron impurity, carries out anneal oxidation technique, forms the second conducting semiconductor material 4；
5th step, erosion removal silicon nitride；
6th step, in semiconductor material surface barrier metal is deposited, and is sintered to form schottky barrier junction 5, Ran Hou
Surface deposition metal forms upper surface metal level 10；
7th step, carries out back side metallization technology, overleaf forms lower surface metal layer 11, and device architecture is as shown in Figure 1.
The present invention is elaborated by examples detailed above, while the present invention, not office of the invention can also be realized using other examples
It is limited to above-mentioned instantiation, therefore the present invention is limited by scope.
Claims (2)
1. a kind of schottky device, it is characterised in that：Including：
Substrate layer, is semi-conducting material；
Drift layer, is the semi-conducting material of the first conduction type, on substrate layer；
Groove structure, groove is located in device edge drift layer, and groove structure is the whole groove structure with double-face side wall, ditch
Groove inner wall surface has oxide dielectric material, and device drift layer upper surface is not provided with insulant, abuts against trench bottom regions
Be provided with the second conduction type semi-conducting material, the second conduction type semi-conducting material not with device drift layer upper surface,
Second conduction type semi-conducting material of channel bottom extends charge compensation structure for knot terminal, is formed in device reverse biased
Completely depleted region；
Schottky barrier junction, positioned at the drift layer surface of groove structure parcel.
2. a kind of preparation method of schottky device as claimed in claim 1, it is characterised in that：Comprise the steps：
1) by being epitaxially-formed the semiconductor material layer of the first conduction type on substrate layer；
2) silicon nitride layer is formed on surface, on trench region surface to be formed silicon nitride layer is removed；
3) semi-conducting material is performed etching, groove is formed, groove is located in the semiconductor material layer of the first conduction type；
4) implanted dopant, carries out anneal oxidation technique, forms trench wall oxide and channel bottom the second conductive semiconductor material
Material；
5) erosion removal device surface silicon nitride layer；
6) metal is deposited in device surface, is sintered to form schottky barrier junction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201210151837.7A CN103383969B (en) | 2012-05-06 | 2012-05-06 | Schottky device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210151837.7A CN103383969B (en) | 2012-05-06 | 2012-05-06 | Schottky device and manufacturing method thereof |
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| Publication Number | Publication Date |
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| CN103383969A CN103383969A (en) | 2013-11-06 |
| CN103383969B true CN103383969B (en) | 2017-04-26 |
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| CN201210151837.7A Active CN103383969B (en) | 2012-05-06 | 2012-05-06 | Schottky device and manufacturing method thereof |
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| CN108807554B (en) * | 2018-08-03 | 2021-09-21 | 深圳市晶相技术有限公司 | Schottky diode and manufacturing method thereof |
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| CN102013426A (en) * | 2008-12-08 | 2011-04-13 | 台湾积体电路制造股份有限公司 | Integrated circuit structure with schottky barrier diode |
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| CN102244106A (en) * | 2011-06-29 | 2011-11-16 | 复旦大学 | Schottky diode |
| CN102326256A (en) * | 2009-02-19 | 2012-01-18 | 飞兆半导体公司 | Be used to improve the structure and the method for groove protected type semiconductor device and Schottky barrier rectifier device |
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| CN1529912A (en) * | 2000-12-15 | 2004-09-15 | ͨ�ð뵼�幫˾ | Trench Schottky barrier rectifier and method of making same |
| CN101371337A (en) * | 2005-01-14 | 2009-02-18 | 国际整流器公司 | Trench schottky barrier diode with differential oxide thickness |
| CN101452967A (en) * | 2007-11-30 | 2009-06-10 | 上海华虹Nec电子有限公司 | Schottky barrier diode device and manufacturing method thereof |
| CN101510557A (en) * | 2008-01-11 | 2009-08-19 | 艾斯莫斯技术有限公司 | Superjunction device having a dielectric termination and methods for manufacturing the device |
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| CN102326256A (en) * | 2009-02-19 | 2012-01-18 | 飞兆半导体公司 | Be used to improve the structure and the method for groove protected type semiconductor device and Schottky barrier rectifier device |
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| CN101800252A (en) * | 2010-03-04 | 2010-08-11 | 无锡新洁能功率半导体有限公司 | Groove-shaped Schottky barrier rectifier and manufacture method thereof |
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Effective date of registration: 20210425 Address after: Room 301, 3rd floor, building 16, Guangxi Huike Technology Co., Ltd., No. 336, East extension of Beihai Avenue, Beihai Industrial Park, 536000, Guangxi Zhuang Autonomous Region Patentee after: Beihai Huike Semiconductor Technology Co.,Ltd. Address before: 113200 Liaoning Province Xinbin Manchu Autonomous County Federation of disabled persons Patentee before: Zhu Jiang |
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