CN103579371A - Channel terminal structure Schottky device and manufacturing method thereof - Google Patents
Channel terminal structure Schottky device and manufacturing method thereof Download PDFInfo
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- CN103579371A CN103579371A CN201210264710.6A CN201210264710A CN103579371A CN 103579371 A CN103579371 A CN 103579371A CN 201210264710 A CN201210264710 A CN 201210264710A CN 103579371 A CN103579371 A CN 103579371A
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- groove
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- insulating material
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- schottky
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- 238000004519 manufacturing process Methods 0.000 title abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 49
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 239000011810 insulating material Substances 0.000 claims description 10
- 238000005260 corrosion Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 7
- 230000003628 erosive effect Effects 0.000 claims description 6
- 239000012774 insulation material Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 238000001465 metallisation Methods 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 2
- 238000002161 passivation Methods 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 238000000034 method Methods 0.000 abstract description 7
- 238000002347 injection Methods 0.000 abstract description 2
- 239000007924 injection Substances 0.000 abstract description 2
- 230000005684 electric field Effects 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 239000000377 silicon dioxide Substances 0.000 description 12
- 235000012239 silicon dioxide Nutrition 0.000 description 12
- 239000002210 silicon-based material Substances 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 125000004437 phosphorous atom Chemical group 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a channel terminal structure Schottky device. The semiconductor device is provided with a terminal of a channel structure and is not provided with second conducting type semiconductor materials, concentration of the device on a Schottky edge electric field in the process of reverse bias is relieved through the channel structure, and the manufacturing process of the device is simplified. Meanwhile, when a traditional device conducts electricity in the forward direction, the injection of the second conducting type semiconductor materials to a drift region is reduced, and the high frequency property of the device is improved.
Description
Technical field
The present invention relates to a kind of groove terminal structure schottky device, the invention still further relates to a kind of preparation method of groove terminal structure schottky device.
Background technology
Power semiconductor is by being used in power management and application of power in a large number, and the semiconductor device that specially refers to schottky junction has become the important trend that device develops, and schottky device has the advantages such as the low unlatching turn-off speed of forward cut-in voltage is fast.
Schottky diode can be manufactured by multiple different topology, the most frequently used is plane figure, traditional planer schottky diode has p type island region, be positioned at schottky junction edge, for maintaining schottky junction, there is higher reverse blocking voltage when the reverse biased, but also increased the technique manufacture difficulty of device, also in device, introduced PN junction simultaneously, form double carriers device, affect the switching speed of device.
Summary of the invention
The present invention is directed to the problems referred to above and propose, a kind of groove terminal structure schottky device and preparation method thereof is provided.
A terminal structure schottky device, is characterized in that: comprising: substrate layer is the first conduction type semi-conducting material; Drift layer, is the semi-conducting material of the first conduction type, is positioned on substrate layer; One or more grooves, are arranged in device edge drift layer, are provided with insulating material in groove; Schottky barrier junction, is positioned at device center excursD layer surface.
A preparation method for groove terminal structure schottky device, is characterized in that: the semiconductor material layer that comprises the steps: to form by epitaxial growth the first conduction type on substrate layer; On surface, form the first insulation material layer, at trench region surface removal the first insulation material layer to be formed; Carry out etching semiconductor material, form groove; In groove, form the second insulation material layer, erosion removal device surface the first passivation layer; At device surface deposit barrier metal, carry out sintering and form schottky barrier junction; Upper surface deposition of electrode metal, carries out photoetching corrosion and removes partial electrode metal; Carry out back side metallization technology, at the substrate layer back side, form electrode metal.
Semiconductor device of the present invention has the terminal of groove structure, there is no the second conduction type semi-conducting material in device, while slowing down device reverse biased by groove structure, the concentrating of Schottky fringe field, has simplified the manufacturing process of device; Stop traditional devices the second conduction type semi-conducting material few sub injection to drift region when forward conduction simultaneously, improved device high frequency characteristics.
Accompanying drawing explanation
Fig. 1 is a kind of groove terminal structure schottky device generalized section of the present invention;
Fig. 2 is a kind of groove terminal structure schottky device generalized section of the present invention;
Fig. 3 is a kind of groove terminal structure schottky device generalized section of the present invention;
Fig. 4 is a kind of groove terminal structure schottky device generalized section of the present invention;
Fig. 5 is a kind of groove terminal structure schottky device generalized section of the present invention;
Fig. 6 is a kind of groove terminal structure schottky device generalized section of the present invention.
Wherein,
1, substrate layer;
2, silicon dioxide;
3, the first conductive semiconductor material;
5, schottky barrier junction;
7, alundum (Al2O3);
8, oxygen-doped polysilicon;
10, upper surface metal level;
11, lower surface metal layer.
Embodiment
Fig. 1 is a kind of groove terminal structure schottky device generalized section of the present invention, below in conjunction with Fig. 1, describes semiconductor device of the present invention in detail.
A terminal structure schottky device, comprising: substrate layer 1 is N conductive type semiconductor silicon materials, and the doping content of phosphorus atoms is 1E19/CM
3, at substrate layer 1 lower surface, by lower surface metal layer 11 extraction electrodes; The first conductive semiconductor material 3, is positioned on substrate layer 1, is the semiconductor silicon material of N conduction type, and the doping content of phosphorus atoms is 1E16/CM
3; Schottky barrier junction 5, is positioned at the surface of the first conductive semiconductor material 3, is the silicide that semiconductor silicon material and barrier metal form; Silicon dioxide 2, is positioned at groove, and the groove width of device edge is 2um, and gash depth is 5um, and groove pitch is 3um; Device upper surface is with upper surface metal level 10, for device is drawn another electrode.
Its manufacture craft comprises the steps:
The first step, forms the first conductive semiconductor material layer 3 in the surperficial epitaxial growth of substrate layer 1;
Second step, surface deposition silicon nitride, carries out lithography corrosion process, and semiconductor material surface is removed part silicon nitride;
The 3rd step, dry etching, removes part bare semiconductor silicon materials and forms groove;
The 4th step, in groove, deposit forms silicon dioxide 2, erosion removal silicon nitride;
The 5th step; At semiconductor material surface deposit barrier metal nickel, carry out sintering and form schottky barrier junction 5;
The 6th step, forms upper surface metal level at surface deposition metal, carries out lithography corrosion process erosion removal surface part metals, forms upper surface metal level 10;
The 7th step, carries out back side metallization technology, forms overleaf lower surface metal layer 11, and device architecture as shown in Figure 1.
Fig. 2 is a kind of groove terminal structure schottky device generalized section of the present invention, on the basis of manufacturing at Fig. 1 device, the silicon dioxide of filling in groove is changed to alundum (Al2O3) 7, alundum (Al2O3) 7 has higher interfacial state, can form charge compensation with the first conductive semiconductor material 3, improve device reverse blocking voltage.
Fig. 3 is a kind of groove terminal structure schottky device generalized section of the present invention, on the basis of manufacturing at Fig. 1 device, by filling silicon dioxide in groove, change to oxygen-doped polysilicon 8, oxygen-doped polysilicon 8 can form charge compensation with the first conductive semiconductor material 3, improves device reverse blocking voltage.
Fig. 4 is a kind of groove terminal structure schottky device generalized section of the present invention, below in conjunction with Fig. 4, describes semiconductor device of the present invention in detail.
A terminal structure schottky device, comprising: substrate layer 1 is N conductive type semiconductor silicon materials, and the doping content of phosphorus atoms is 1E19/CM
3, at substrate layer 1 lower surface, by lower surface metal layer 11 extraction electrodes; The first conductive semiconductor material 3, is positioned on substrate layer 1, is the semiconductor silicon material of N conduction type, and the doping content of phosphorus atoms is 1E16/CM
3; Schottky barrier junction 5, is positioned at the surface of the first conductive semiconductor material 3, is the silicide that semiconductor silicon material and barrier metal form; Silicon dioxide 2, is positioned at groove and device edge surface, and the groove width of device edge is 2um, and gash depth is 5um, and groove pitch is 3um; Device upper surface is with upper surface metal level 10, for device is drawn another electrode.
Its manufacture craft comprises the steps:
The first step, forms the first conductive semiconductor material layer 3 in the surperficial epitaxial growth of substrate layer 1;
Second step, surface heat oxidation forms silicon dioxide 2, carries out lithography corrosion process, and semiconductor material surface is removed part silicon dioxide 2;
The 3rd step, dry etching, removes part bare semiconductor silicon materials and forms groove;
The 4th step, in groove, deposit forms silicon dioxide 2, carries out lithography corrosion process, the silicon dioxide 2 at erosion removal device center;
The 5th step; At semiconductor material surface deposit barrier metal nickel, carry out sintering and form schottky barrier junction 5;
The 6th step, forms upper surface metal level at surface deposition metal, carries out lithography corrosion process erosion removal surface part metals, forms upper surface metal level 10;
The 7th step, carries out back side metallization technology, forms overleaf lower surface metal layer 11, and device architecture as shown in Figure 4.
Fig. 5 is a kind of groove terminal structure schottky device generalized section of the present invention, on the basis of manufacturing at Fig. 4 device, the silicon dioxide of filling in groove is changed to alundum (Al2O3) 7, alundum (Al2O3) 7 has higher interfacial state, can form charge compensation with the first conductive semiconductor material 3, improve device reverse blocking voltage.
Fig. 6 is a kind of groove terminal structure schottky device generalized section of the present invention, on the basis of manufacturing at Fig. 4 device, by filling silicon dioxide in groove, change to oxygen-doped polysilicon 8, oxygen-doped polysilicon 8 can form charge compensation with the first conductive semiconductor material 3, improves device reverse blocking voltage.
By above-mentioned example, set forth the present invention, also can adopt other example to realize the present invention, the present invention is not limited to above-mentioned instantiation, so the present invention is by claims circumscription simultaneously.
Claims (10)
1. a groove terminal structure schottky device, is characterized in that: comprising:
Substrate layer is the first conduction type semi-conducting material;
Drift layer, is the semi-conducting material of the first conduction type, is positioned on substrate layer; One or more
Groove, is arranged in device edge drift layer, is provided with insulating material in groove;
Schottky barrier junction, is positioned at device center excursD layer surface.
2. semiconductor device as claimed in claim 1, is characterized in that: the width of described groove is less than or equal to 3 microns.
3. semiconductor device as claimed in claim 1, is characterized in that: the insulating material arranging in described groove can be for having the insulating material of high interfacial state.
4. semiconductor device as claimed in claim 1, is characterized in that: the insulating material arranging in described groove can be stoicheiometry mismatch insulating material.
5. semiconductor device as claimed in claim 4, it is characterized in that: described stoicheiometry mismatch insulating material, for compound insulating material, its compound element proportioning is unsaturated state, and can not meet insulating material Atom outermost electron quantity is 8.
6. semiconductor device as claimed in claim 1, is characterized in that: the drift layer surface between described a plurality of grooves can be floating empty schottky barrier junction.
7. semiconductor device as claimed in claim 6, is characterized in that: the schottky barrier junction surface of described floating sky can cover floating empty metal.
8. semiconductor device as claimed in claim 1, is characterized in that: the drift layer surface between described a plurality of grooves also can cover for insulating material.
9. semiconductor device as claimed in claim 1, is characterized in that: the schottky barrier junction at described device center is by groove circumscribe.
10. the preparation method of a kind of groove terminal structure schottky device as claimed in claim 1, is characterized in that: comprise the steps:
1) on substrate layer, by epitaxial growth, form the semiconductor material layer of the first conduction type;
2) on surface, form the first insulation material layer, at trench region surface removal the first insulation material layer to be formed;
3) carry out etching semiconductor material, form groove;
4) in groove, form the second insulation material layer, erosion removal device surface the first passivation layer;
5), at device surface deposit barrier metal, carry out sintering and form schottky barrier junction;
6) upper surface deposition of electrode metal, carries out photoetching corrosion and removes partial electrode metal;
7) carry out back side metallization technology, at the substrate layer back side, form electrode metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210264710.6A CN103579371A (en) | 2012-07-27 | 2012-07-27 | Channel terminal structure Schottky device and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210264710.6A CN103579371A (en) | 2012-07-27 | 2012-07-27 | Channel terminal structure Schottky device and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN103579371A true CN103579371A (en) | 2014-02-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210264710.6A Pending CN103579371A (en) | 2012-07-27 | 2012-07-27 | Channel terminal structure Schottky device and manufacturing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108735794A (en) * | 2017-04-17 | 2018-11-02 | 朱江 | Schottky semiconductor device |
| EP3683847A4 (en) * | 2017-09-11 | 2021-06-09 | TDK Corporation | Schottky barrier diode |
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|---|---|---|---|---|
| CN1301046A (en) * | 1999-12-17 | 2001-06-27 | 艾伦·Y·谭 | Schottky diodes, rectifiers and manufacture thereof |
| US20020134998A1 (en) * | 2001-02-15 | 2002-09-26 | Koninklijke Philips Electronics N.V. | Semiconductor devices and their peripheral termination |
| US20050184355A1 (en) * | 2004-02-24 | 2005-08-25 | Sanyo Electric Co., Ltd. | Semiconductor device |
| US7196397B2 (en) * | 2004-03-04 | 2007-03-27 | International Rectifier Corporation | Termination design with multiple spiral trench rings |
| CN102354704A (en) * | 2011-11-04 | 2012-02-15 | 丹东安顺微电子有限公司 | Schottky diode with high reverse-blocking performance and manufacturing method thereof |
| CN102376779A (en) * | 2011-11-25 | 2012-03-14 | 中国科学院微电子研究所 | Sic schottky diode and manufacturing method thereof |
-
2012
- 2012-07-27 CN CN201210264710.6A patent/CN103579371A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1301046A (en) * | 1999-12-17 | 2001-06-27 | 艾伦·Y·谭 | Schottky diodes, rectifiers and manufacture thereof |
| US20020134998A1 (en) * | 2001-02-15 | 2002-09-26 | Koninklijke Philips Electronics N.V. | Semiconductor devices and their peripheral termination |
| US20050184355A1 (en) * | 2004-02-24 | 2005-08-25 | Sanyo Electric Co., Ltd. | Semiconductor device |
| US7196397B2 (en) * | 2004-03-04 | 2007-03-27 | International Rectifier Corporation | Termination design with multiple spiral trench rings |
| CN102354704A (en) * | 2011-11-04 | 2012-02-15 | 丹东安顺微电子有限公司 | Schottky diode with high reverse-blocking performance and manufacturing method thereof |
| CN102376779A (en) * | 2011-11-25 | 2012-03-14 | 中国科学院微电子研究所 | Sic schottky diode and manufacturing method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108735794A (en) * | 2017-04-17 | 2018-11-02 | 朱江 | Schottky semiconductor device |
| EP3683847A4 (en) * | 2017-09-11 | 2021-06-09 | TDK Corporation | Schottky barrier diode |
| US11699766B2 (en) | 2017-09-11 | 2023-07-11 | Tdk Corporation | Schottky barrier diode |
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Application publication date: 20140212 |
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