CN103378176B - One kind has charge compensation Schottky semiconductor device and its manufacture method - Google Patents
One kind has charge compensation Schottky semiconductor device and its manufacture method Download PDFInfo
- Publication number
- CN103378176B CN103378176B CN201210144440.5A CN201210144440A CN103378176B CN 103378176 B CN103378176 B CN 103378176B CN 201210144440 A CN201210144440 A CN 201210144440A CN 103378176 B CN103378176 B CN 103378176B
- Authority
- CN
- China
- Prior art keywords
- semiconductor material
- conducting semiconductor
- groove
- conducting
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
There is charge compensation Schottky semiconductor device the invention discloses one kind, when semiconductor device connects certain reverse biased, first conducting semiconductor material and the second conducting semiconductor material can form charge compensation, the breakdown reverse voltage of device can be improved, or improves the forward conduction characteristic of device；Present invention also offers a kind of manufacture method with charge compensation Schottky semiconductor device.
Description
Technical field
There is charge compensation Schottky semiconductor device the present invention relates to one kind, the invention further relates to a kind of office's electric charge benefit
Repay the manufacture method of Schottky semiconductor device.The semiconductor device of the present invention is the basic structure for manufacturing power rectifier device.
Background technology
Power semiconductor is widely used in power management and power supply using upper, is related specifically to the half of schottky junction
Conductor device turns into the important trend of device development, and schottky device is fast etc. with the low unlatching turn-off speed of positive cut-in voltage
Advantage, while schottky device also has reverse leakage current big, it is impossible to the shortcomings of being applied to hyperbaric environment.
Schottky diode can be manufactured by a variety of different topologies, the most frequently used for plane figure, traditional
Planer schottky diode has the Electric Field Distribution curve of mutation in drift region, have impact on the reverse breakdown characteristics of device, simultaneously
Traditional planer schottky diode has higher conducting resistance.
The content of the invention
The present invention proposes there is charge compensation Schottky semiconductor device and its manufacturer there is provided one kind regarding to the issue above
Method.
One kind has charge compensation Schottky semiconductor device, it is characterised in that：Including：Substrate layer, is first conductive half
Conductor material is constituted；Second conducting semiconductor material layer, is the second conducting semiconductor material on substrate layer；Multiple ditches
Groove, in the conducting semiconductor material of drift layer second, under-filled first conducting semiconductor material, groove internal upper part in groove
Side wall is provided with insulating materials；Schottky barrier junction, positioned at the first conducting semiconductor material surface.
A kind of manufacture method with charge compensation Schottky semiconductor device, it is characterised in that：Comprise the following steps：
First conducting semiconductor material constitutes substrate layer surface formation the second conducting semiconductor material layer, and then surface forms a kind of insulation
Medium；Carry out lithography corrosion process and remove surface portion dielectric, then etching removes partial denudation semi-conducting material and formed
Groove；The first conducting semiconductor material is formed in groove, progress anti-carves erosion；A kind of insulation is formed in semiconductor material surface to be situated between
Matter, dry etching dielectric；Barrier metal is deposited, is sintered to form schottky barrier junction.
When semiconductor device connects certain reverse biased, the first conducting semiconductor material and the second conducting semiconductor material
Charge compensation can be formed, the breakdown reverse voltage of device is improved.
Because the presence of charge compensation structure, so as to improve the impurity doping concentration of drift region, device can also be reduced
The forward conduction resistance of part, improves the forward conduction characteristic of device.
Brief description of the drawings
Fig. 1 has charge compensation Schottky semiconductor device diagrammatic cross-section for one kind of the present invention；
Fig. 2 has charge compensation Schottky semiconductor device diagrammatic cross-section for of the invention second.
Wherein,
1st, substrate layer；
2nd, silica；
3rd, the first conducting semiconductor material；
4th, the second conducting semiconductor material；
5th, schottky barrier junction；
6th, Second Type schottky barrier junction；
7th, ohmic contact regions；
8th, charge compensation structure；
10th, upper surface metal level；
11st, lower surface metal layer.
Embodiment
Embodiment 1
Fig. 1 has charge compensation Schottky semiconductor device profile for one kind of the present invention, with reference to Fig. 1 specifically
Bright semiconductor device of the invention.
One kind has charge compensation Schottky semiconductor device, including：Substrate layer 1, is N conductive type semiconductor silicon materials
Material, the doping concentration of phosphorus atoms is 1E19/CM3, in the lower surface of substrate layer 1, pass through the extraction electrode of lower surface metal layer 11；First
Conducting semiconductor material 3, is the semiconductor silicon material of N conduction types on substrate layer 1, the doping concentration of phosphorus atoms is
1E16/CM3；Second conducting semiconductor material 4, is the semiconductor silicon of P conduction types in the first conducting semiconductor material 3
Material, the doping concentration of boron atom is 1E16/CM3, its surface has higher ion doping concentration；Schottky barrier junction 5, position
It is semiconductor silicon material and the silicide of barrier metal formation in the surface of the first conducting semiconductor material 3；Ohmic contact regions 7,
Positioned at the surface of the second conducting semiconductor material 4；Silica 2, positioned at groove inner sidewall upper portion；Device upper surface has upper table
Face metal level 10, is that device draws another electrode.
Its manufacture craft comprises the following steps：
The first step, the first conducting semiconductor material layer is epitaxially formed on the surface of substrate layer 1, second is then epitaxially formed conductive
Semiconductor material layer, injects boron ion anneal oxidation, forms silica 2；
Second step, carries out lithography corrosion process, and semiconductor material surface removes part of silica 2, and then etching is removed
Partial denudation semiconductor silicon material formation groove；
3rd step, forms the first conducting semiconductor material 3 in groove, carries out the first conducting semiconductor material 3 and anti-carves erosion；
4th step, carries out thermal oxidation technology, forms silica 2, and dry etching removes silica 2；
5th step, deposits barrier metal in semiconductor material surface, is sintered to form schottky barrier junction 5, Ran Hou
Surface deposition metal formation upper surface metal level 10；
6th step, carries out back side metallization technology, overleaf forms lower surface metal layer 11, as shown in Figure 1.
Embodiment 2
Fig. 2 has charge compensation Schottky semiconductor device profile for one kind of the present invention, with reference to Fig. 2 specifically
Bright semiconductor device of the invention.
One kind has charge compensation Schottky semiconductor device, including：Substrate layer 1, is N conductive type semiconductor silicon materials
Material, the doping concentration of phosphorus atoms is 1E19/CM3, in the lower surface of substrate layer 1, pass through the extraction electrode of lower surface metal layer 11；First
Conducting semiconductor material 3, is the semiconductor silicon material of N conduction types on substrate layer 1, the doping concentration of phosphorus atoms is
1E16/CM3；Second conducting semiconductor material 4, is the semiconductor silicon of P conduction types in the first conducting semiconductor material 3
Material, the doping concentration of boron atom is 1E16/CM3；Schottky barrier junction 5, positioned at the surface of the first conducting semiconductor material 3,
For semiconductor silicon material and the silicide of barrier metal formation；Second Type schottky barrier junction 6, positioned at the second conductive semiconductor
The surface of material 4；Silica 2, positioned at groove inner sidewall upper portion；Device upper surface has upper surface metal level 10, is device
Draw another electrode.
Its manufacture craft comprises the following steps：
The first step, the first conducting semiconductor material layer is epitaxially formed on the surface of substrate layer 1, second is then epitaxially formed conductive
Semiconductor material layer, carries out thermal oxidation technology, and silica 2 is formed on surface；
Second step, carries out lithography corrosion process, and semiconductor material surface removes part of silica 2, and then etching is removed
Partial denudation semiconductor silicon material formation groove；
3rd step, forms the first conducting semiconductor material 3 in groove, carries out the first conducting semiconductor material 3 and anti-carves erosion；
4th step, carries out thermal oxidation technology, forms silica 2, and dry etching removes silica 2；
5th step, deposits barrier metal in semiconductor material surface, is sintered to form schottky barrier junction 5 and Equations of The Second Kind
Type schottky barrier junction 6, then in surface deposition metal formation upper surface metal level 10；
6th step, carries out back side metallization technology, overleaf forms lower surface metal layer 11, as shown in Figure 2.
The present invention is elaborated by examples detailed above, while the present invention, not office of the invention can also be realized using other examples
It is limited to above-mentioned instantiation, therefore the present invention is limited by scope.
Claims (5)
1. one kind has charge compensation Schottky semiconductor device, it is characterised in that：Including：
Substrate layer, is that the first conducting semiconductor material is constituted；
Second conducting semiconductor material layer, is the second conducting semiconductor material on substrate layer；It is multiple
Groove, in the second conducting semiconductor material, under-filled first conducting semiconductor material, groove internal upper part in groove
Sidewall surfaces are provided with insulating materials, are connected with under-filled first conducting semiconductor material in time slot with substrate layer；
Schottky barrier junction, the under-filled first conducting semiconductor material upper surface in groove is partly led less than the second conduction
Body material layer upper surface, is the first conducting semiconductor material and the knot of barrier metal formation；
The second conducting semiconductor material upper surface is ohmic contact regions or Second Type schottky barrier junction between groove, wherein the
Two type schottky barrier junctions are located at the second conducting semiconductor material upper surface；
Second conducting semiconductor material and under-filled first conducting semiconductor material formation charge compensation in groove between groove
Structure.
2. semiconductor device as claimed in claim 1, it is characterised in that：Described substrate layer is half that high concentration impurities are adulterated
Conductor material.
3. semiconductor device as claimed in claim 1, it is characterised in that：Described substrate layer is included for high concentration impurities doping
Semiconductor material layer and low concentration impurity doping semiconductor material layer superimposed layer.
4. semiconductor device as claimed in claim 1, it is characterised in that：Under-filled first conduction is partly led in described groove
The length of body material occupies the overwhelming majority of trench length.
5. a kind of manufacture method with charge compensation Schottky semiconductor device as claimed in claim 1, it is characterised in that：
Comprise the following steps：
1) substrate layer surface formation the second conducting semiconductor material layer is constituted in the first conducting semiconductor material, then surface is formed
A kind of dielectric；
2) carry out lithography corrosion process and remove surface portion dielectric, then etching removes partial denudation semi-conducting material and formed
Groove；
3) the first conducting semiconductor material is formed in groove, progress anti-carves erosion；
4) a kind of dielectric, dry etching dielectric are formed in semiconductor material surface；
5) barrier metal is deposited, is sintered to form schottky barrier junction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210144440.5A CN103378176B (en) | 2012-04-30 | 2012-04-30 | One kind has charge compensation Schottky semiconductor device and its manufacture method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210144440.5A CN103378176B (en) | 2012-04-30 | 2012-04-30 | One kind has charge compensation Schottky semiconductor device and its manufacture method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103378176A CN103378176A (en) | 2013-10-30 |
| CN103378176B true CN103378176B (en) | 2017-10-20 |
Family
ID=49463030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210144440.5A Active CN103378176B (en) | 2012-04-30 | 2012-04-30 | One kind has charge compensation Schottky semiconductor device and its manufacture method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103378176B (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01196168A (en) * | 1988-02-01 | 1989-08-07 | Seiko Epson Corp | Semiconductor device |
| FR2797094B1 (en) * | 1999-07-28 | 2001-10-12 | St Microelectronics Sa | PROCESS FOR MANUFACTURING SINGLE POLE COMPONENTS |
| DE102007045185A1 (en) * | 2007-09-21 | 2009-04-02 | Robert Bosch Gmbh | Semiconductor device and method for its production |
-
2012
- 2012-04-30 CN CN201210144440.5A patent/CN103378176B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN103378176A (en) | 2013-10-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103137710B (en) | A kind of groove Schottky semiconductor device with multiple insulator separation and preparation method thereof | |
| CN103199119B (en) | Groove schottky semiconductor device with super junction structure and manufacturing method thereof | |
| CN103378171B (en) | A kind of groove Schottky semiconductor device and preparation method thereof | |
| CN103545381B (en) | A kind of horizontal structure groove Schottky semiconductor device and preparation method thereof | |
| CN103367396B (en) | Super junction Schottky semiconductor device and preparation method thereof | |
| CN103531617B (en) | One kind has channel terminal structure Schottky device and preparation method thereof | |
| CN103515450B (en) | Groove charge compensation Schottky semiconductor device and manufacturing method thereof | |
| CN103378178B (en) | Schottky semiconductor device with groove structures and preparation method thereof | |
| CN103378176B (en) | One kind has charge compensation Schottky semiconductor device and its manufacture method | |
| CN103515449B (en) | One kind has charge compensation groove Schottky semiconductor device and preparation method thereof | |
| CN103378172B (en) | Schottky semiconductor device and method for preparing same | |
| CN103390651B (en) | Groove schottky semiconductor device and manufacturing method thereof | |
| CN103378177B (en) | Schottky semiconductor device with grooves and preparation method thereof | |
| CN103383969B (en) | Schottky device and manufacturing method thereof | |
| CN103378170A (en) | Schottky semiconductor device with super junction and preparation method thereof | |
| CN103681778B (en) | Groove charge compensation schottky semiconductor device and preparation method thereof | |
| CN103579373B (en) | A kind of Trench-structure charge compensation Schottky semiconductor device and its manufacture method | |
| CN103367438B (en) | A kind of semiconductor device of metal semiconductor charge compensation and preparation method thereof | |
| CN103367462A (en) | Schottky semiconductor device with insulating layer isolated super-junction structure and preparation method for Schottky semiconductor device | |
| CN103390652B (en) | Groove charge compensation schottky semiconductor device and manufacture method thereof | |
| CN103489895B (en) | A kind of trench super junction semiconductor device | |
| CN103383968A (en) | Interface charge compensation Schottky semiconductor device and manufacturing method for same | |
| CN103426937B (en) | Trench terminal-structured Schottky device and preparation method thereof | |
| CN103378173B (en) | One kind has charge compensation Schottky semiconductor device and its manufacture method | |
| CN103199102A (en) | Schottky semiconductor device with super junction structure and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210425 Address after: Room 301, 3rd floor, building 16, Guangxi Huike Technology Co., Ltd., No. 336, East extension of Beihai Avenue, Beihai Industrial Park, 536000, Guangxi Zhuang Autonomous Region Patentee after: Beihai Huike Semiconductor Technology Co.,Ltd. Address before: 113200 Liaoning Province Xinbin Manchu Autonomous County Federation of disabled persons Patentee before: Zhu Jiang |
|
| TR01 | Transfer of patent right |