MY185098A - A method for manufacturing a large schottky diode - Google Patents

A method for manufacturing a large schottky diode

Info

Publication number
MY185098A
MY185098A MYPI2014002536A MYPI2014002536A MY185098A MY 185098 A MY185098 A MY 185098A MY PI2014002536 A MYPI2014002536 A MY PI2014002536A MY PI2014002536 A MYPI2014002536 A MY PI2014002536A MY 185098 A MY185098 A MY 185098A
Authority
MY
Malaysia
Prior art keywords
diode
trench
present
schottky diode
depositing
Prior art date
Application number
MYPI2014002536A
Inventor
Rofei Mat Hussin Mohd
Kamariah Wan Sabli Sharaifah
Mohd Nasir Iskhandar
Original Assignee
Mimos Berhad
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mimos Berhad filed Critical Mimos Berhad
Priority to MYPI2014002536A priority Critical patent/MY185098A/en
Priority to PCT/MY2015/050093 priority patent/WO2016032316A1/en
Publication of MY185098A publication Critical patent/MY185098A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes

Abstract

The present invention relates to a method for manufacturing a large Schottky diode. Thme present invention comprising: depositing a contact etch stop layer (CESL) on top of the gate oxide and trench array structure (600); depositing (700) and planarizing (800) a pre-metal dielectric to produce flat topography on the top surface; patterning (900) and etching (1000, 1100) the dielectric layers using plasma etch method; and conducting wet etching to remove the dielectric layer completely from contact area (1200). The present invention provides a robust fabrication method of producing a large area of trench Schottky diode with better protection to the trench guard ring structure. The structure of the diode technically directly affects the reverse leakage current of the diode. Due to that, it is important to produce the diode without structure damage at guard ring area in order to reduce and stabilize reverse leakage current.
MYPI2014002536A 2014-08-29 2014-08-29 A method for manufacturing a large schottky diode MY185098A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
MYPI2014002536A MY185098A (en) 2014-08-29 2014-08-29 A method for manufacturing a large schottky diode
PCT/MY2015/050093 WO2016032316A1 (en) 2014-08-29 2015-08-27 A method for manufacturing a large schottky diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MYPI2014002536A MY185098A (en) 2014-08-29 2014-08-29 A method for manufacturing a large schottky diode

Publications (1)

Publication Number Publication Date
MY185098A true MY185098A (en) 2021-04-30

Family

ID=55400107

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2014002536A MY185098A (en) 2014-08-29 2014-08-29 A method for manufacturing a large schottky diode

Country Status (2)

Country Link
MY (1) MY185098A (en)
WO (1) WO2016032316A1 (en)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6350043A (en) * 1986-08-19 1988-03-02 Mitsubishi Electric Corp Inter-layer insulating film for semiconductor device
US5940732A (en) * 1995-11-27 1999-08-17 Semiconductor Energy Laboratory Co., Method of fabricating semiconductor device
JP2001068688A (en) * 1999-08-26 2001-03-16 Fuji Electric Co Ltd Manufacture of schottky barrier diode and schottky barrier diode
US6420768B1 (en) * 2000-12-15 2002-07-16 General Semiconductor, Inc. Trench schottky barrier rectifier and method of making the same
TWI497602B (en) * 2011-02-15 2015-08-21 Tzu Hsiung Chen Trench schottky diode and manufacturing mehtod thereof
US8642473B2 (en) * 2011-03-04 2014-02-04 Applied Materials, Inc. Methods for contact clean
US8680587B2 (en) * 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
CN103021867B (en) * 2012-12-21 2016-11-16 上海华虹宏力半导体制造有限公司 The forming method of trench metal-oxide-semicondbarrier barrier Schottky

Also Published As

Publication number Publication date
WO2016032316A1 (en) 2016-03-03

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