MY185098A - A method for manufacturing a large schottky diode - Google Patents
A method for manufacturing a large schottky diodeInfo
- Publication number
- MY185098A MY185098A MYPI2014002536A MYPI2014002536A MY185098A MY 185098 A MY185098 A MY 185098A MY PI2014002536 A MYPI2014002536 A MY PI2014002536A MY PI2014002536 A MYPI2014002536 A MY PI2014002536A MY 185098 A MY185098 A MY 185098A
- Authority
- MY
- Malaysia
- Prior art keywords
- diode
- trench
- present
- schottky diode
- depositing
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000151 deposition Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 238000012876 topography Methods 0.000 abstract 1
- 238000001039 wet etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention relates to a method for manufacturing a large Schottky diode. Thme present invention comprising: depositing a contact etch stop layer (CESL) on top of the gate oxide and trench array structure (600); depositing (700) and planarizing (800) a pre-metal dielectric to produce flat topography on the top surface; patterning (900) and etching (1000, 1100) the dielectric layers using plasma etch method; and conducting wet etching to remove the dielectric layer completely from contact area (1200). The present invention provides a robust fabrication method of producing a large area of trench Schottky diode with better protection to the trench guard ring structure. The structure of the diode technically directly affects the reverse leakage current of the diode. Due to that, it is important to produce the diode without structure damage at guard ring area in order to reduce and stabilize reverse leakage current.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MYPI2014002536A MY185098A (en) | 2014-08-29 | 2014-08-29 | A method for manufacturing a large schottky diode |
PCT/MY2015/050093 WO2016032316A1 (en) | 2014-08-29 | 2015-08-27 | A method for manufacturing a large schottky diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MYPI2014002536A MY185098A (en) | 2014-08-29 | 2014-08-29 | A method for manufacturing a large schottky diode |
Publications (1)
Publication Number | Publication Date |
---|---|
MY185098A true MY185098A (en) | 2021-04-30 |
Family
ID=55400107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI2014002536A MY185098A (en) | 2014-08-29 | 2014-08-29 | A method for manufacturing a large schottky diode |
Country Status (2)
Country | Link |
---|---|
MY (1) | MY185098A (en) |
WO (1) | WO2016032316A1 (en) |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6350043A (en) * | 1986-08-19 | 1988-03-02 | Mitsubishi Electric Corp | Inter-layer insulating film for semiconductor device |
US5940732A (en) * | 1995-11-27 | 1999-08-17 | Semiconductor Energy Laboratory Co., | Method of fabricating semiconductor device |
JP2001068688A (en) * | 1999-08-26 | 2001-03-16 | Fuji Electric Co Ltd | Manufacture of schottky barrier diode and schottky barrier diode |
US6420768B1 (en) * | 2000-12-15 | 2002-07-16 | General Semiconductor, Inc. | Trench schottky barrier rectifier and method of making the same |
TWI497602B (en) * | 2011-02-15 | 2015-08-21 | Tzu Hsiung Chen | Trench schottky diode and manufacturing mehtod thereof |
US8642473B2 (en) * | 2011-03-04 | 2014-02-04 | Applied Materials, Inc. | Methods for contact clean |
US8680587B2 (en) * | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
CN103021867B (en) * | 2012-12-21 | 2016-11-16 | 上海华虹宏力半导体制造有限公司 | The forming method of trench metal-oxide-semicondbarrier barrier Schottky |
-
2014
- 2014-08-29 MY MYPI2014002536A patent/MY185098A/en unknown
-
2015
- 2015-08-27 WO PCT/MY2015/050093 patent/WO2016032316A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2016032316A1 (en) | 2016-03-03 |
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