AU2001288042A1 - High speed silicon etching method - Google Patents

High speed silicon etching method

Info

Publication number
AU2001288042A1
AU2001288042A1 AU2001288042A AU8804201A AU2001288042A1 AU 2001288042 A1 AU2001288042 A1 AU 2001288042A1 AU 2001288042 A AU2001288042 A AU 2001288042A AU 8804201 A AU8804201 A AU 8804201A AU 2001288042 A1 AU2001288042 A1 AU 2001288042A1
Authority
AU
Australia
Prior art keywords
high speed
etching method
silicon etching
speed silicon
speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001288042A
Other languages
English (en)
Inventor
Takanori Mimura
Kazuya Nagaseki
Tokuhisa Ohiwa
Itsuko Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Tokyo Electron Ltd
Original Assignee
Toshiba Corp
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Electron Ltd filed Critical Toshiba Corp
Publication of AU2001288042A1 publication Critical patent/AU2001288042A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3347—Problems associated with etching bottom of holes or trenches
AU2001288042A 2000-09-14 2001-09-13 High speed silicon etching method Abandoned AU2001288042A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000280376A JP3920015B2 (ja) 2000-09-14 2000-09-14 Ｓｉ基板の加工方法
JP2000-280376 2000-09-14
PCT/JP2001/007962 WO2002023609A1 (fr) 2000-09-14 2001-09-13 Procede de gravure de silicium a vitesse elevee

Publications (1)

Publication Number Publication Date
AU2001288042A1 true AU2001288042A1 (en) 2002-03-26

Family

ID=18765225

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001288042A Abandoned AU2001288042A1 (en) 2000-09-14 2001-09-13 High speed silicon etching method

Country Status (8)

Country Link
US (1) US7022616B2 (ja)
EP (1) EP1329948A4 (ja)
JP (1) JP3920015B2 (ja)
KR (1) KR100875770B1 (ja)
CN (1) CN1284213C (ja)
AU (1) AU2001288042A1 (ja)
TW (1) TW506015B (ja)
WO (1) WO2002023609A1 (ja)

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KR100403616B1 (ko) * 2001-01-03 2003-10-30 삼성전자주식회사 플라즈마 장치에 의한 플라즈마 처리 공정의 시뮬레이션방법
US20050103441A1 (en) * 2001-11-14 2005-05-19 Masanobu Honda Etching method and plasma etching apparatus
JP4377698B2 (ja) * 2002-04-08 2009-12-02 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP4431402B2 (ja) 2002-04-08 2010-03-17 東京エレクトロン株式会社 プラズマエッチング方法
CN100388434C (zh) 2003-03-12 2008-05-14 东京毅力科创株式会社 半导体处理用的基板保持结构和等离子体处理装置
JP3972846B2 (ja) 2003-03-25 2007-09-05 セイコーエプソン株式会社 半導体装置の製造方法
US20040256353A1 (en) * 2003-04-24 2004-12-23 Tokyo Electron Limited Method and system for deep trench silicon etch
JP4781106B2 (ja) * 2003-06-13 2011-09-28 住友精密工業株式会社 シリコンエッチング方法及び装置並びにエッチングシリコン体
US7993460B2 (en) * 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
DE10331526A1 (de) * 2003-07-11 2005-02-03 Infineon Technologies Ag Verfahren zum anisotropen Ätzen einer Ausnehmung in ein Siliziumsubstrat und Verwendung einer Plasmaätzanlage
US20050011859A1 (en) * 2003-07-15 2005-01-20 Bing Ji Unsaturated oxygenated fluorocarbons for selective aniostropic etch applications
CN1871520B (zh) * 2003-10-22 2012-06-06 爱科来株式会社 分析器具供给装置
KR101083558B1 (ko) * 2003-12-01 2011-11-14 파나소닉 주식회사 플라즈마 에칭 방법
US20050241671A1 (en) * 2004-04-29 2005-11-03 Dong Chun C Method for removing a substance from a substrate using electron attachment
JP4182921B2 (ja) 2004-06-08 2008-11-19 セイコーエプソン株式会社 ノズルプレートの製造方法
US7988816B2 (en) 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
US7740737B2 (en) 2004-06-21 2010-06-22 Tokyo Electron Limited Plasma processing apparatus and method
US7951262B2 (en) * 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
WO2005124844A1 (ja) * 2004-06-21 2005-12-29 Tokyo Electron Limited プラズマ処理装置及び方法
US7615164B2 (en) * 2004-06-23 2009-11-10 Micron Technology, Inc. Plasma etching methods and contact opening forming methods
JP4629421B2 (ja) * 2004-12-06 2011-02-09 パナソニック株式会社 ドライエッチング方法及びドライエッチング装置
JP4488999B2 (ja) * 2005-10-07 2010-06-23 株式会社日立ハイテクノロジーズ エッチング方法およびエッチング装置
EP1786027A3 (en) * 2005-11-14 2009-03-04 Schott AG Plasma etching of tapered structures
KR100777151B1 (ko) 2006-03-21 2007-11-16 주식회사 디엠에스 하이브리드형 플라즈마 반응장치
US20080149592A1 (en) * 2006-12-05 2008-06-26 Belen Rodolfo P Plasma etch process for controlling line edge roughness
JP4607930B2 (ja) * 2007-09-14 2011-01-05 株式会社東芝 プラズマ処理装置およびプラズマ処理方法
WO2011115008A1 (ja) * 2010-03-16 2011-09-22 株式会社 アルバック エッチング方法及びエッチング装置
CN103337444A (zh) * 2013-06-08 2013-10-02 天通吉成机器技术有限公司 一种干法等离子刻蚀机的反应腔
JP2015220366A (ja) * 2014-05-19 2015-12-07 株式会社ディスコ ウェーハの加工方法
US10586710B2 (en) * 2017-09-01 2020-03-10 Tokyo Electron Limited Etching method

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Also Published As

Publication number Publication date
JP2002093776A (ja) 2002-03-29
CN1284213C (zh) 2006-11-08
TW506015B (en) 2002-10-11
CN1459125A (zh) 2003-11-26
US7022616B2 (en) 2006-04-04
KR100875770B1 (ko) 2008-12-24
EP1329948A4 (en) 2007-09-12
US20040097079A1 (en) 2004-05-20
KR20030045069A (ko) 2003-06-09
EP1329948A1 (en) 2003-07-23
WO2002023609A1 (fr) 2002-03-21
JP3920015B2 (ja) 2007-05-30

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