JPS5632730A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5632730A
JPS5632730A JP10895479A JP10895479A JPS5632730A JP S5632730 A JPS5632730 A JP S5632730A JP 10895479 A JP10895479 A JP 10895479A JP 10895479 A JP10895479 A JP 10895479A JP S5632730 A JPS5632730 A JP S5632730A
Authority
JP
Japan
Prior art keywords
etching
groove
chip
manufacture
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10895479A
Other languages
Japanese (ja)
Inventor
Masao Saito
Kazuo Sakurada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10895479A priority Critical patent/JPS5632730A/en
Publication of JPS5632730A publication Critical patent/JPS5632730A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To prevent the breaking of the chip by cutting a groove having a required depth from the surface of a substrate, performing etching to the groove from the bottom surface, and dividing the chip. CONSTITUTION:A groove 4 is provided in an Si wafer 1 by using a dicer, the wafer 1 is stuck to a glass plate 2, and the bottom surface is etched by a bubble etching device. HNO3-HF and the like are used as etching liquid. While the etching is continuing, the groove 4 appears. At this time, the etching is stopped and the washing is performed by water. Since the etching may be stopped when the groove is recogvized, the time to stop the etching is readily acknowledged, and the breaking of the chip and the like are not caused.
JP10895479A 1979-08-27 1979-08-27 Manufacture of semiconductor device Pending JPS5632730A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10895479A JPS5632730A (en) 1979-08-27 1979-08-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10895479A JPS5632730A (en) 1979-08-27 1979-08-27 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5632730A true JPS5632730A (en) 1981-04-02

Family

ID=14497857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10895479A Pending JPS5632730A (en) 1979-08-27 1979-08-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5632730A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1329948A4 (en) * 2000-09-14 2007-09-12 Tokyo Electron Ltd High speed silicon etching method
JP2020038871A (en) * 2018-09-03 2020-03-12 株式会社ディスコ Processing method for workpiece

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49748A (en) * 1972-04-18 1974-01-07
JPS4941956A (en) * 1972-05-01 1974-04-19

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49748A (en) * 1972-04-18 1974-01-07
JPS4941956A (en) * 1972-05-01 1974-04-19

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1329948A4 (en) * 2000-09-14 2007-09-12 Tokyo Electron Ltd High speed silicon etching method
JP2020038871A (en) * 2018-09-03 2020-03-12 株式会社ディスコ Processing method for workpiece

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