JPS57154838A - Chemical etching liquid for semiconductor silicon wafer - Google Patents

Chemical etching liquid for semiconductor silicon wafer

Info

Publication number
JPS57154838A
JPS57154838A JP3951381A JP3951381A JPS57154838A JP S57154838 A JPS57154838 A JP S57154838A JP 3951381 A JP3951381 A JP 3951381A JP 3951381 A JP3951381 A JP 3951381A JP S57154838 A JPS57154838 A JP S57154838A
Authority
JP
Japan
Prior art keywords
kerf
chemical etching
etching liquid
silicon wafer
semiconductor silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3951381A
Other languages
Japanese (ja)
Inventor
Masahiko Kizaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Rectifier Corp Japan Ltd
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp Japan Ltd
Infineon Technologies Americas Corp
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp Japan Ltd, Infineon Technologies Americas Corp, International Rectifier Corp USA filed Critical International Rectifier Corp Japan Ltd
Priority to JP3951381A priority Critical patent/JPS57154838A/en
Publication of JPS57154838A publication Critical patent/JPS57154838A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To etch a wall surface in the kerf of the semiconductor silicon wafer uniformly by chemically etching the wall surface in the kerf with the chemical etching liquid to which a proper quantity of a surface-active agent is added. CONSTITUTION:The kerf with narrow groove width is formed on the semiconductor silicon wafer through dicing, etc., and the wall surface in the kerf is chemcally etched uniformly. The chemical etching liquid is manufactured by adding a proper quantity of the surface active agent, such as sodium dialkylsuccinate, sodium dihexylsulfosuccinicate, sodium dioctylsulfosuccinicate, etc. to a chemical etching liquid at that time. It is preferable that the surface active agent is added by 0.1-0.2wt%. Accordingly, bubbles in the kerf are rapidly removed, and the wall surface of the kerf can be etched equally.
JP3951381A 1981-03-20 1981-03-20 Chemical etching liquid for semiconductor silicon wafer Pending JPS57154838A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3951381A JPS57154838A (en) 1981-03-20 1981-03-20 Chemical etching liquid for semiconductor silicon wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3951381A JPS57154838A (en) 1981-03-20 1981-03-20 Chemical etching liquid for semiconductor silicon wafer

Publications (1)

Publication Number Publication Date
JPS57154838A true JPS57154838A (en) 1982-09-24

Family

ID=12555118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3951381A Pending JPS57154838A (en) 1981-03-20 1981-03-20 Chemical etching liquid for semiconductor silicon wafer

Country Status (1)

Country Link
JP (1) JPS57154838A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5596226A (en) * 1994-09-06 1997-01-21 International Business Machines Corporation Semiconductor chip having a chip metal layer and a transfer metal and corresponding electronic module

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5596226A (en) * 1994-09-06 1997-01-21 International Business Machines Corporation Semiconductor chip having a chip metal layer and a transfer metal and corresponding electronic module
US5644162A (en) * 1994-09-06 1997-07-01 International Business Machines Corporation Semiconductor chip having chip metal layer and transfer metal layer composed of same metal, and corresponding electronic module
US5804464A (en) * 1994-09-06 1998-09-08 International Business Machines Corporation Semiconductor chip kerf clear method for forming semiconductor chips and electronic module therefore

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