AU2001253890A1 - Methods and apparatus for thermally processing wafers - Google Patents
Methods and apparatus for thermally processing wafersInfo
- Publication number
- AU2001253890A1 AU2001253890A1 AU2001253890A AU5389001A AU2001253890A1 AU 2001253890 A1 AU2001253890 A1 AU 2001253890A1 AU 2001253890 A AU2001253890 A AU 2001253890A AU 5389001 A AU5389001 A AU 5389001A AU 2001253890 A1 AU2001253890 A1 AU 2001253890A1
- Authority
- AU
- Australia
- Prior art keywords
- methods
- wafers
- thermally processing
- process chamber
- processing wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title abstract 6
- 235000012431 wafers Nutrition 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09550888 | 2000-04-17 | ||
| US09/550,888 US6331212B1 (en) | 2000-04-17 | 2000-04-17 | Methods and apparatus for thermally processing wafers |
| PCT/US2001/040511 WO2001080291A1 (en) | 2000-04-17 | 2001-04-12 | Methods and apparatus for thermally processing wafers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001253890A1 true AU2001253890A1 (en) | 2001-10-30 |
Family
ID=24198985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001253890A Abandoned AU2001253890A1 (en) | 2000-04-17 | 2001-04-12 | Methods and apparatus for thermally processing wafers |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US6331212B1 (enExample) |
| EP (1) | EP1275135B1 (enExample) |
| JP (1) | JP2003531489A (enExample) |
| KR (1) | KR100793329B1 (enExample) |
| CN (1) | CN1199236C (enExample) |
| AT (1) | ATE390705T1 (enExample) |
| AU (1) | AU2001253890A1 (enExample) |
| DE (1) | DE60133376T2 (enExample) |
| TW (1) | TW529059B (enExample) |
| WO (1) | WO2001080291A1 (enExample) |
Families Citing this family (82)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020037695A (ko) * | 2000-11-14 | 2002-05-22 | 히가시 데쓰로 | 기판 처리장치 및 기판 처리방법 |
| JP3607664B2 (ja) * | 2000-12-12 | 2005-01-05 | 日本碍子株式会社 | Iii−v族窒化物膜の製造装置 |
| US20020129768A1 (en) * | 2001-03-15 | 2002-09-19 | Carpenter Craig M. | Chemical vapor deposition apparatuses and deposition methods |
| US6902622B2 (en) * | 2001-04-12 | 2005-06-07 | Mattson Technology, Inc. | Systems and methods for epitaxially depositing films on a semiconductor substrate |
| CN1309859C (zh) * | 2001-05-17 | 2007-04-11 | 东京电子株式会社 | 基于圆筒的等离子体处理系统 |
| US6442950B1 (en) * | 2001-05-23 | 2002-09-03 | Macronix International Co., Ltd. | Cooling system of chamber with removable liner |
| JP2003031050A (ja) * | 2001-07-16 | 2003-01-31 | Nec Corp | 水銀を含む銅酸化物超伝導体薄膜、その製造装置およびその製造方法 |
| US20060190211A1 (en) * | 2001-07-23 | 2006-08-24 | Schietinger Charles W | In-situ wafer parameter measurement method employing a hot susceptor as radiation source for reflectance measurement |
| US20030036877A1 (en) * | 2001-07-23 | 2003-02-20 | Schietinger Charles W. | In-situ wafer parameter measurement method employing a hot susceptor as a reflected light source |
| US6896738B2 (en) | 2001-10-30 | 2005-05-24 | Cree, Inc. | Induction heating devices and methods for controllably heating an article |
| US6861321B2 (en) * | 2002-04-05 | 2005-03-01 | Asm America, Inc. | Method of loading a wafer onto a wafer holder to reduce thermal shock |
| US6921556B2 (en) * | 2002-04-12 | 2005-07-26 | Asm Japan K.K. | Method of film deposition using single-wafer-processing type CVD |
| US20040035360A1 (en) * | 2002-05-17 | 2004-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
| TWI336905B (en) * | 2002-05-17 | 2011-02-01 | Semiconductor Energy Lab | Evaporation method, evaporation device and method of fabricating light emitting device |
| US6887521B2 (en) * | 2002-08-15 | 2005-05-03 | Micron Technology, Inc. | Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices |
| US6709267B1 (en) | 2002-12-27 | 2004-03-23 | Asm America, Inc. | Substrate holder with deep annular groove to prevent edge heat loss |
| DE10303700B4 (de) | 2003-01-30 | 2005-09-22 | Siemens Ag | Verfahren zur Interferenzunterdrückung |
| US7091453B2 (en) * | 2003-02-27 | 2006-08-15 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus by means of light irradiation |
| US6951821B2 (en) * | 2003-03-17 | 2005-10-04 | Tokyo Electron Limited | Processing system and method for chemically treating a substrate |
| US20040182315A1 (en) * | 2003-03-17 | 2004-09-23 | Tokyo Electron Limited | Reduced maintenance chemical oxide removal (COR) processing system |
| US20040255442A1 (en) * | 2003-06-19 | 2004-12-23 | Mcdiarmid James | Methods and apparatus for processing workpieces |
| CN1301534C (zh) * | 2003-07-15 | 2007-02-21 | 旺宏电子股份有限公司 | 半导体炉管温度及气体流量异常事件的预防方法 |
| CN1307686C (zh) * | 2003-10-14 | 2007-03-28 | 茂德科技股份有限公司 | 批式处理装置及晶片处理方法 |
| CN100530523C (zh) * | 2003-10-27 | 2009-08-19 | 应用材料股份有限公司 | 修正温度均匀度的方法 |
| US7044476B2 (en) * | 2003-11-25 | 2006-05-16 | N&K Technology, Inc. | Compact pinlifter assembly integrated in wafer chuck |
| WO2005124859A2 (en) * | 2004-06-10 | 2005-12-29 | Avansys, Inc. | Methods and apparatuses for depositing uniform layers |
| KR100587688B1 (ko) * | 2004-07-28 | 2006-06-08 | 삼성전자주식회사 | 화학 기상 증착 장치 |
| WO2006060134A2 (en) * | 2004-11-15 | 2006-06-08 | Cree, Inc. | Restricted radiated heating assembly for high temperature processing |
| US7105840B2 (en) * | 2005-02-03 | 2006-09-12 | Axcelis Technologies, Inc. | Ion source for use in an ion implanter |
| WO2007004550A1 (ja) * | 2005-07-06 | 2007-01-11 | Komatsu Denshi Kinzoku Kabushiki Kaisha | 半導体ウェーハの製造方法および製造装置 |
| CN100358098C (zh) | 2005-08-05 | 2007-12-26 | 中微半导体设备(上海)有限公司 | 半导体工艺件处理装置 |
| US7691208B2 (en) * | 2005-08-31 | 2010-04-06 | Tokyo Electron Limited | Cleaning method |
| US20070084406A1 (en) | 2005-10-13 | 2007-04-19 | Joseph Yudovsky | Reaction chamber with opposing pockets for gas injection and exhaust |
| US20070084408A1 (en) * | 2005-10-13 | 2007-04-19 | Applied Materials, Inc. | Batch processing chamber with diffuser plate and injector assembly |
| JP4956963B2 (ja) | 2005-11-02 | 2012-06-20 | 富士通セミコンダクター株式会社 | リフロー装置、リフロー方法、および半導体装置の製造方法 |
| US7732009B2 (en) * | 2006-09-26 | 2010-06-08 | United Microelectronics Corp. | Method of cleaning reaction chamber, method of forming protection film and protection wafer |
| JP5202839B2 (ja) * | 2006-12-25 | 2013-06-05 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
| JP4974805B2 (ja) * | 2007-08-10 | 2012-07-11 | トヨタ自動車株式会社 | 加熱炉および加熱炉の加熱方法 |
| WO2009048490A1 (en) * | 2007-10-10 | 2009-04-16 | Michael Iza | Chemical vapor deposition reactor chamber |
| JP5060324B2 (ja) * | 2008-01-31 | 2012-10-31 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び処理容器 |
| KR101137063B1 (ko) * | 2008-04-17 | 2012-04-19 | 혼다 기켄 고교 가부시키가이샤 | 태양 전지의 열처리 장치 |
| US20110033610A1 (en) * | 2008-06-30 | 2011-02-10 | Bertram Jr Ronald Thomas | Modular and readily configurable reactor enclosures and associated function modules |
| US8895107B2 (en) | 2008-11-06 | 2014-11-25 | Veeco Instruments Inc. | Chemical vapor deposition with elevated temperature gas injection |
| KR101001314B1 (ko) | 2008-11-17 | 2010-12-14 | 세메스 주식회사 | 기판 처리 장치 |
| IT1393695B1 (it) | 2009-04-17 | 2012-05-08 | Lpe Spa | Camera di reazione di un reattore epitassiale e reattore che la utilizza |
| US20110073039A1 (en) * | 2009-09-28 | 2011-03-31 | Ron Colvin | Semiconductor deposition system and method |
| KR101073550B1 (ko) * | 2009-10-29 | 2011-10-14 | 삼성모바일디스플레이주식회사 | 기판 열처리 장치 |
| US9084298B2 (en) * | 2010-02-26 | 2015-07-14 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus including shielding unit for suppressing leakage of magnetic field |
| DE102010009795B4 (de) * | 2010-03-01 | 2014-05-15 | Von Ardenne Anlagentechnik Gmbh | Verfahren und Vorrichtung zur Herstellung von metallischen Rückkontakten für waferbasierte Solarzellen |
| US20120181265A1 (en) * | 2010-07-15 | 2012-07-19 | Despatch Industries Limited Partnership | Firing furnace configuration for thermal processing system |
| US10138551B2 (en) | 2010-07-29 | 2018-11-27 | GES Associates LLC | Substrate processing apparatuses and systems |
| CN102465335B (zh) * | 2010-11-18 | 2014-07-16 | 南京大学 | 一种用于半导体材料热壁外延生长系统的加热装置 |
| US20130008602A1 (en) * | 2011-07-07 | 2013-01-10 | Lam Research Ag | Apparatus for treating a wafer-shaped article |
| CN102634850A (zh) * | 2012-03-31 | 2012-08-15 | 江苏鑫和泰光电科技有限公司 | 一种蓝宝石晶片的退火方法 |
| JP6116685B2 (ja) | 2012-07-09 | 2017-04-19 | サン−ゴバン グラス フランスSaint−Gobain Glass France | 対象物を熱処理するための装置と方法 |
| US9926626B2 (en) * | 2012-07-09 | 2018-03-27 | Bengbu Design & Research Institute For Glass Industry | System and method for processing substrates |
| US20150165475A1 (en) * | 2012-07-09 | 2015-06-18 | Saint-Gobain Glass France | Process box, assembly, and method for processing a coated substrate |
| CN103866282B (zh) * | 2012-12-14 | 2016-12-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pecvd设备 |
| SG11201508512PA (en) * | 2013-05-23 | 2015-12-30 | Applied Materials Inc | A coated liner assembly for a semiconductor processing chamber |
| TWI470105B (zh) * | 2013-06-03 | 2015-01-21 | Adpv Technology Ltd | Gas Reaction Continuous Cavity and Gas Reaction |
| US9087864B2 (en) * | 2013-12-19 | 2015-07-21 | Intermolecular, Inc. | Multipurpose combinatorial vapor phase deposition chamber |
| US9808891B2 (en) * | 2014-01-16 | 2017-11-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Tool and method of reflow |
| US20160002775A1 (en) * | 2014-07-02 | 2016-01-07 | Rolls-Royce Corporation | Multilayer liner for chemical vapor deposition furnace |
| KR101651880B1 (ko) * | 2014-10-13 | 2016-08-29 | 주식회사 테스 | 유기금속화학기상증착장치 |
| KR102372893B1 (ko) * | 2014-12-04 | 2022-03-10 | 삼성전자주식회사 | 발광 소자 제조용 화학 기상 증착 장치 |
| US9982364B2 (en) | 2015-04-07 | 2018-05-29 | Applied Materials, Inc. | Process gas preheating systems and methods for double-sided multi-substrate batch processing |
| JP2017017277A (ja) | 2015-07-06 | 2017-01-19 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
| JP6707827B2 (ja) * | 2015-09-28 | 2020-06-10 | 東京エレクトロン株式会社 | 成膜装置 |
| CN107435164A (zh) * | 2016-05-25 | 2017-12-05 | 上海新昇半导体科技有限公司 | 外延生长设备 |
| US10224224B2 (en) * | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| JP6895797B2 (ja) * | 2017-05-09 | 2021-06-30 | 東京エレクトロン株式会社 | 成膜装置 |
| US10179941B1 (en) * | 2017-07-14 | 2019-01-15 | Applied Materials, Inc. | Gas delivery system for high pressure processing chamber |
| CN115468626B (zh) | 2017-07-27 | 2025-11-04 | 沃特洛电气制造公司 | 用于测量和控制加热器系统性能的传感器系统和集成加热器-传感器 |
| GB201815815D0 (en) * | 2018-09-28 | 2018-11-14 | Metryx Ltd | Method and apparatus for controlling the temperature of a semiconductor wafer |
| JP7257813B2 (ja) * | 2019-02-21 | 2023-04-14 | 東京エレクトロン株式会社 | 水蒸気処理装置及び水蒸気処理方法 |
| SE1930124A1 (sv) | 2019-04-12 | 2020-10-13 | Epiluvac Ab | Anordning och förfarande för att tillförsäkra planhet hos wafer under tillväxt |
| US11032945B2 (en) * | 2019-07-12 | 2021-06-08 | Applied Materials, Inc. | Heat shield assembly for an epitaxy chamber |
| CN110512287A (zh) * | 2019-09-12 | 2019-11-29 | 江苏吉星新材料有限公司 | 一种4吋蓝宝石晶体退火方法 |
| US11898245B2 (en) * | 2021-02-26 | 2024-02-13 | Applied Materials, Inc. | High throughput and metal contamination control oven for chamber component cleaning process |
| KR102564228B1 (ko) * | 2021-04-29 | 2023-08-09 | 주식회사 테스 | 유기금속화학기상증착장치 |
| US20240254654A1 (en) * | 2023-01-26 | 2024-08-01 | Applied Materials, Inc. | Epi isolation plate with gap and angle adjustment for process tuning |
| KR20250156326A (ko) * | 2024-04-25 | 2025-11-03 | 주식회사 테스 | 화학기상증착장치 |
Family Cites Families (58)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US685906A (en) * | 1901-03-21 | 1901-11-05 | Eugene Brown | Combined milk dipper and measure. |
| US4496609A (en) | 1969-10-15 | 1985-01-29 | Applied Materials, Inc. | Chemical vapor deposition coating process employing radiant heat and a susceptor |
| US3603284A (en) * | 1970-01-02 | 1971-09-07 | Ibm | Vapor deposition apparatus |
| US3862397A (en) * | 1972-03-24 | 1975-01-21 | Applied Materials Tech | Cool wall radiantly heated reactor |
| US4081313A (en) | 1975-01-24 | 1978-03-28 | Applied Materials, Inc. | Process for preparing semiconductor wafers with substantially no crystallographic slip |
| US4167915A (en) * | 1977-03-09 | 1979-09-18 | Atomel Corporation | High-pressure, high-temperature gaseous chemical apparatus |
| JPS5632400A (en) * | 1979-08-16 | 1981-04-01 | Toshiba Corp | Vapor phase growing method for gallium phosphide layer |
| US4347431A (en) * | 1980-07-25 | 1982-08-31 | Bell Telephone Laboratories, Inc. | Diffusion furnace |
| JPS58158914A (ja) * | 1982-03-16 | 1983-09-21 | Semiconductor Res Found | 半導体製造装置 |
| US4651673A (en) * | 1982-09-02 | 1987-03-24 | At&T Technologies, Inc. | CVD apparatus |
| US4481406A (en) * | 1983-01-21 | 1984-11-06 | Varian Associates, Inc. | Heater assembly for thermal processing of a semiconductor wafer in a vacuum chamber |
| JPS60112694A (ja) * | 1983-11-21 | 1985-06-19 | Matsushita Electric Ind Co Ltd | 化合物半導体の気相成長方法 |
| US4728389A (en) | 1985-05-20 | 1988-03-01 | Applied Materials, Inc. | Particulate-free epitaxial process |
| US4753192A (en) * | 1987-01-08 | 1988-06-28 | Btu Engineering Corporation | Movable core fast cool-down furnace |
| US4849608A (en) * | 1987-02-14 | 1989-07-18 | Dainippon Screen Mfg. Co., Ltd. | Apparatus for heat-treating wafers |
| US4976996A (en) | 1987-02-17 | 1990-12-11 | Lam Research Corporation | Chemical vapor deposition reactor and method of use thereof |
| US4836138A (en) | 1987-06-18 | 1989-06-06 | Epsilon Technology, Inc. | Heating system for reaction chamber of chemical vapor deposition equipment |
| US4975561A (en) | 1987-06-18 | 1990-12-04 | Epsilon Technology Inc. | Heating system for substrates |
| US4886954A (en) * | 1988-04-15 | 1989-12-12 | Thermco Systems, Inc. | Hot wall diffusion furnace and method for operating the furnace |
| JPH03116929A (ja) * | 1989-09-29 | 1991-05-17 | Nec Yamaguchi Ltd | 半導体基板用熱処理装置 |
| JP2551172B2 (ja) * | 1989-11-29 | 1996-11-06 | 富士通株式会社 | 気相エピタキシャル成長装置 |
| US5154512A (en) * | 1990-04-10 | 1992-10-13 | Luxtron Corporation | Non-contact techniques for measuring temperature or radiation-heated objects |
| US5128515A (en) * | 1990-05-21 | 1992-07-07 | Tokyo Electron Sagami Limited | Heating apparatus |
| US5324920A (en) * | 1990-10-18 | 1994-06-28 | Tokyo Electron Sagami Limited | Heat treatment apparatus |
| JPH04349623A (ja) * | 1991-05-28 | 1992-12-04 | Fuji Electric Co Ltd | 気相成長装置 |
| JP2633432B2 (ja) * | 1992-01-22 | 1997-07-23 | 東京応化工業株式会社 | 加熱処理装置 |
| US5431958A (en) * | 1992-03-09 | 1995-07-11 | Sharp Kabushiki Kaisha | Metalorganic chemical vapor deposition of ferroelectric thin films |
| JP3348936B2 (ja) * | 1993-10-21 | 2002-11-20 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
| US5305416A (en) * | 1993-04-02 | 1994-04-19 | At&T Bell Laboratories | Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies |
| US5624590A (en) * | 1993-04-02 | 1997-04-29 | Lucent Technologies, Inc. | Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies and an apparatus for practicing this technique |
| US5440101A (en) * | 1993-04-19 | 1995-08-08 | Research, Incorporated | Continuous oven with a plurality of heating zones |
| US5622639A (en) * | 1993-07-29 | 1997-04-22 | Tokyo Electron Kabushiki Kaisha | Heat treating apparatus |
| JPH07283155A (ja) * | 1994-04-01 | 1995-10-27 | Kokusai Electric Co Ltd | 半導体製造装置 |
| JPH0855810A (ja) * | 1994-08-16 | 1996-02-27 | Nec Kyushu Ltd | 拡散炉 |
| US5536919A (en) * | 1994-11-22 | 1996-07-16 | Taheri; Ramtin | Heating chamber |
| US5636320A (en) * | 1995-05-26 | 1997-06-03 | International Business Machines Corporation | Sealed chamber with heating lamps provided within transparent tubes |
| JPH08330317A (ja) * | 1995-05-31 | 1996-12-13 | F T L:Kk | 半導体装置の製造方法 |
| US5861609A (en) * | 1995-10-02 | 1999-01-19 | Kaltenbrunner; Guenter | Method and apparatus for rapid thermal processing |
| JPH09106950A (ja) * | 1995-10-12 | 1997-04-22 | Nec Corp | 結晶成長装置および結晶プロセス装置 |
| US5854468A (en) * | 1996-01-25 | 1998-12-29 | Brooks Automation, Inc. | Substrate heating apparatus with cantilevered lifting arm |
| JPH1092754A (ja) * | 1996-09-18 | 1998-04-10 | Tokyo Electron Ltd | 枚葉式の熱処理装置及び熱処理方法 |
| KR100443415B1 (ko) * | 1996-02-23 | 2004-11-03 | 동경 엘렉트론 주식회사 | 열처리장치 |
| TW506620U (en) * | 1996-03-15 | 2002-10-11 | Asahi Glass Co Ltd | Low pressure CVD apparatus |
| US6133550A (en) * | 1996-03-22 | 2000-10-17 | Sandia Corporation | Method and apparatus for thermal processing of semiconductor substrates |
| JP3200396B2 (ja) * | 1996-06-24 | 2001-08-20 | 株式会社日立国際電気 | 基板処理装置および成膜方法 |
| KR100310248B1 (ko) | 1996-06-24 | 2001-12-15 | 엔도 마코토 | 기판처리장치 |
| US5891251A (en) | 1996-08-07 | 1999-04-06 | Macleish; Joseph H. | CVD reactor having heated process chamber within isolation chamber |
| DE69727658T2 (de) * | 1997-04-22 | 2005-04-28 | Imec Vzw | Kontinuierlicher Ofen mit hohem Durchsatz für Diffusionsbehandlung mit verschiedenen Diffusionsquellen |
| US5911896A (en) * | 1997-06-25 | 1999-06-15 | Brooks Automation, Inc. | Substrate heating apparatus with glass-ceramic panels and thin film ribbon heater element |
| US6021152A (en) * | 1997-07-11 | 2000-02-01 | Asm America, Inc. | Reflective surface for CVD reactor walls |
| US6075922A (en) * | 1997-08-07 | 2000-06-13 | Steag Rtp Systems, Inc. | Process for preventing gas leaks in an atmospheric thermal processing chamber |
| JPH1174202A (ja) * | 1997-08-29 | 1999-03-16 | Sharp Corp | 窒化ガリウム系iii−v族化合物半導体の気相成長装置並びに窒化ガリウム系iii−v族化合物半導体装置及びその製造方法 |
| US6258170B1 (en) * | 1997-09-11 | 2001-07-10 | Applied Materials, Inc. | Vaporization and deposition apparatus |
| EP0924500B1 (de) * | 1997-12-08 | 2006-10-18 | STEAG RTP Systems GmbH | Verfahren zum Messen elektromagnetischer Strahlung |
| US5800616A (en) * | 1997-12-15 | 1998-09-01 | Sony Corporation | Vertical LPCVD furnace with reversible manifold collar and method of retrofitting same |
| TW411486B (en) * | 1998-01-17 | 2000-11-11 | Hanbekku Corp | Horizontal reaction furnace for manufacturing compound semiconductor |
| SE9801190D0 (sv) * | 1998-04-06 | 1998-04-06 | Abb Research Ltd | A method and a device for epitaxial growth of objects by Chemical Vapour Deposition |
| US6246031B1 (en) * | 1999-11-30 | 2001-06-12 | Wafermasters, Inc. | Mini batch furnace |
-
2000
- 2000-04-17 US US09/550,888 patent/US6331212B1/en not_active Expired - Fee Related
-
2001
- 2001-04-12 DE DE60133376T patent/DE60133376T2/de not_active Expired - Lifetime
- 2001-04-12 AU AU2001253890A patent/AU2001253890A1/en not_active Abandoned
- 2001-04-12 AT AT01927443T patent/ATE390705T1/de not_active IP Right Cessation
- 2001-04-12 WO PCT/US2001/040511 patent/WO2001080291A1/en not_active Ceased
- 2001-04-12 JP JP2001577590A patent/JP2003531489A/ja active Pending
- 2001-04-12 EP EP01927443A patent/EP1275135B1/en not_active Expired - Lifetime
- 2001-04-12 KR KR1020027013933A patent/KR100793329B1/ko not_active Expired - Fee Related
- 2001-04-12 CN CNB018098576A patent/CN1199236C/zh not_active Expired - Fee Related
- 2001-04-16 TW TW090109009A patent/TW529059B/zh not_active IP Right Cessation
- 2001-07-07 US US09/900,594 patent/US6774060B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1430789A (zh) | 2003-07-16 |
| KR100793329B1 (ko) | 2008-01-11 |
| US6331212B1 (en) | 2001-12-18 |
| US6774060B2 (en) | 2004-08-10 |
| HK1057130A1 (en) | 2004-03-12 |
| KR20030010601A (ko) | 2003-02-05 |
| ATE390705T1 (de) | 2008-04-15 |
| EP1275135B1 (en) | 2008-03-26 |
| JP2003531489A (ja) | 2003-10-21 |
| WO2001080291A1 (en) | 2001-10-25 |
| TW529059B (en) | 2003-04-21 |
| CN1199236C (zh) | 2005-04-27 |
| DE60133376D1 (de) | 2008-05-08 |
| WO2001080291B1 (en) | 2002-02-21 |
| US20010046768A1 (en) | 2001-11-29 |
| DE60133376T2 (de) | 2009-04-23 |
| EP1275135A1 (en) | 2003-01-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU2001253890A1 (en) | Methods and apparatus for thermally processing wafers | |
| WO2003081646A3 (en) | System and method for heating and cooling wafer at accelerated rates | |
| EP0651424A3 (en) | Quasi-infinite heat source or sink. | |
| WO2002084710A3 (en) | Systems and methods for epitaxially depositing films | |
| TW428250B (en) | Method and apparatus for thermal processing of semiconductor substrates | |
| EP1025579B1 (en) | Rapid thermal processing (rtp) system with rotating substrate | |
| EP1209251A3 (en) | Temperature control system for wafer | |
| WO2001069656A3 (en) | Localized heating and cooling of substrates | |
| EP0902464A3 (en) | Semiconductor wafer temperature measurement and control thereof using gas temperature measurement | |
| KR940012515A (ko) | 서셉터의 온도제어방법 | |
| ATE440376T1 (de) | Verarbeitungssystem und verfahren zum thermischen behandeln eines substrats | |
| MY151676A (en) | Substrate support having dynamic temperature control | |
| JP2003517198A5 (enExample) | ||
| EP1235257A4 (en) | Semiconductor-manufacturing apparatus | |
| DE60135672D1 (de) | Elektrostatisch festgeklemmter randring für die plasmaverarbeitung | |
| EP1182692A3 (en) | Heat-processing apparatus and method for semiconductor process | |
| KR950020967A (ko) | 플라즈마 처리장치 및 플라즈마 처리방법 | |
| WO2002071446A3 (en) | Method and apparatus for active temperature control of susceptors | |
| IL119823A (en) | Method and apparatus for temperature control of a semiconductor | |
| WO2004109773A3 (en) | Method and system for heating a substrate using a plasma | |
| TW373251B (en) | Arrangement for processing a substrate wafer and operating method thereof | |
| WO2005067009A3 (en) | Process controls for improved wafer uniformity using integrated or standalone metrology | |
| US6105274A (en) | Cryogenic/phase change cooling for rapid thermal process systems | |
| TW200636829A (en) | Apparatus and method for thermal processing | |
| SG152028A1 (en) | Method for substrate thermal management |