TW529059B - Method and apparatus for thermally processing wafers - Google Patents
Method and apparatus for thermally processing wafers Download PDFInfo
- Publication number
- TW529059B TW529059B TW090109009A TW90109009A TW529059B TW 529059 B TW529059 B TW 529059B TW 090109009 A TW090109009 A TW 090109009A TW 90109009 A TW90109009 A TW 90109009A TW 529059 B TW529059 B TW 529059B
- Authority
- TW
- Taiwan
- Prior art keywords
- reaction chamber
- wafer
- gas
- patent application
- scope
- Prior art date
Links
- 235000012431 wafers Nutrition 0.000 title claims abstract description 227
- 238000012545 processing Methods 0.000 title claims abstract description 103
- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims description 154
- 239000007789 gas Substances 0.000 claims description 93
- 238000010438 heat treatment Methods 0.000 claims description 68
- 239000012495 reaction gas Substances 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 28
- 238000012805 post-processing Methods 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 19
- 230000002079 cooperative effect Effects 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 18
- 238000007781 pre-processing Methods 0.000 claims description 17
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 15
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000010453 quartz Substances 0.000 claims description 14
- 239000000919 ceramic Substances 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 12
- 239000007924 injection Substances 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 11
- 125000006850 spacer group Chemical group 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- 238000010926 purge Methods 0.000 claims description 9
- 238000002203 pretreatment Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 230000001276 controlling effect Effects 0.000 claims description 5
- 230000004044 response Effects 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 5
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 230000006698 induction Effects 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229910052778 Plutonium Inorganic materials 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 2
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 238000005121 nitriding Methods 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 claims description 2
- 238000001953 recrystallisation Methods 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 22
- 230000008901 benefit Effects 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000007789 sealing Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 239000002826 coolant Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 4
- 238000005201 scrubbing Methods 0.000 description 4
- 238000009529 body temperature measurement Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000009991 scouring Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101100536354 Drosophila melanogaster tant gene Proteins 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/550,888 US6331212B1 (en) | 2000-04-17 | 2000-04-17 | Methods and apparatus for thermally processing wafers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW529059B true TW529059B (en) | 2003-04-21 |
Family
ID=24198985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090109009A TW529059B (en) | 2000-04-17 | 2001-04-16 | Method and apparatus for thermally processing wafers |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US6331212B1 (enExample) |
| EP (1) | EP1275135B1 (enExample) |
| JP (1) | JP2003531489A (enExample) |
| KR (1) | KR100793329B1 (enExample) |
| CN (1) | CN1199236C (enExample) |
| AT (1) | ATE390705T1 (enExample) |
| AU (1) | AU2001253890A1 (enExample) |
| DE (1) | DE60133376T2 (enExample) |
| TW (1) | TW529059B (enExample) |
| WO (1) | WO2001080291A1 (enExample) |
Cited By (6)
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|---|---|---|---|---|
| TWI404108B (zh) * | 2005-02-03 | 2013-08-01 | Axcelis Tech Inc | 離子植入器 |
| TWI470105B (zh) * | 2013-06-03 | 2015-01-21 | Adpv Technology Ltd | Gas Reaction Continuous Cavity and Gas Reaction |
| US9799517B2 (en) | 2015-07-06 | 2017-10-24 | SCREEN Holdings Co., Ltd. | Apparatus and method for light-irradiation heat treatment |
| TWI648440B (zh) * | 2016-05-25 | 2019-01-21 | 大陸商上海新昇半導體科技有限公司 | 磊晶生長設備 |
| TWI690706B (zh) * | 2017-07-27 | 2020-04-11 | 美商瓦特洛威電子製造公司 | 感測器系統及用以測量及控制加熱器系統之效能之整合式加熱器感測器 |
| TWI834810B (zh) * | 2019-02-21 | 2024-03-11 | 日商東京威力科創股份有限公司 | 水蒸氣處理裝置及水蒸氣處理方法 |
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| CN1309859C (zh) * | 2001-05-17 | 2007-04-11 | 东京电子株式会社 | 基于圆筒的等离子体处理系统 |
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| JP2003031050A (ja) * | 2001-07-16 | 2003-01-31 | Nec Corp | 水銀を含む銅酸化物超伝導体薄膜、その製造装置およびその製造方法 |
| US20060190211A1 (en) * | 2001-07-23 | 2006-08-24 | Schietinger Charles W | In-situ wafer parameter measurement method employing a hot susceptor as radiation source for reflectance measurement |
| US20030036877A1 (en) * | 2001-07-23 | 2003-02-20 | Schietinger Charles W. | In-situ wafer parameter measurement method employing a hot susceptor as a reflected light source |
| US6896738B2 (en) * | 2001-10-30 | 2005-05-24 | Cree, Inc. | Induction heating devices and methods for controllably heating an article |
| US6861321B2 (en) * | 2002-04-05 | 2005-03-01 | Asm America, Inc. | Method of loading a wafer onto a wafer holder to reduce thermal shock |
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- 2001-04-12 CN CNB018098576A patent/CN1199236C/zh not_active Expired - Fee Related
- 2001-04-12 WO PCT/US2001/040511 patent/WO2001080291A1/en not_active Ceased
- 2001-04-12 JP JP2001577590A patent/JP2003531489A/ja active Pending
- 2001-04-12 AT AT01927443T patent/ATE390705T1/de not_active IP Right Cessation
- 2001-04-12 KR KR1020027013933A patent/KR100793329B1/ko not_active Expired - Fee Related
- 2001-04-12 EP EP01927443A patent/EP1275135B1/en not_active Expired - Lifetime
- 2001-04-12 AU AU2001253890A patent/AU2001253890A1/en not_active Abandoned
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| TWI404108B (zh) * | 2005-02-03 | 2013-08-01 | Axcelis Tech Inc | 離子植入器 |
| TWI470105B (zh) * | 2013-06-03 | 2015-01-21 | Adpv Technology Ltd | Gas Reaction Continuous Cavity and Gas Reaction |
| US9799517B2 (en) | 2015-07-06 | 2017-10-24 | SCREEN Holdings Co., Ltd. | Apparatus and method for light-irradiation heat treatment |
| TWI625791B (zh) * | 2015-07-06 | 2018-06-01 | 思可林集團股份有限公司 | 熱處理裝置及熱處理方法 |
| TWI648440B (zh) * | 2016-05-25 | 2019-01-21 | 大陸商上海新昇半導體科技有限公司 | 磊晶生長設備 |
| TWI690706B (zh) * | 2017-07-27 | 2020-04-11 | 美商瓦特洛威電子製造公司 | 感測器系統及用以測量及控制加熱器系統之效能之整合式加熱器感測器 |
| TWI707141B (zh) * | 2017-07-27 | 2020-10-11 | 美商瓦特洛威電子製造公司 | 感測器系統及用以測量及控制加熱器系統之效能之整合式加熱器感測器 |
| US11525744B2 (en) | 2017-07-27 | 2022-12-13 | Watlow Electric Manufacturing Company | Sensor system and integrated heater-sensor for measuring and controlling performance of a heater system |
| TWI834810B (zh) * | 2019-02-21 | 2024-03-11 | 日商東京威力科創股份有限公司 | 水蒸氣處理裝置及水蒸氣處理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2001253890A1 (en) | 2001-10-30 |
| CN1430789A (zh) | 2003-07-16 |
| US20010046768A1 (en) | 2001-11-29 |
| US6774060B2 (en) | 2004-08-10 |
| WO2001080291A1 (en) | 2001-10-25 |
| US6331212B1 (en) | 2001-12-18 |
| HK1057130A1 (en) | 2004-03-12 |
| ATE390705T1 (de) | 2008-04-15 |
| JP2003531489A (ja) | 2003-10-21 |
| WO2001080291B1 (en) | 2002-02-21 |
| EP1275135A1 (en) | 2003-01-15 |
| KR100793329B1 (ko) | 2008-01-11 |
| CN1199236C (zh) | 2005-04-27 |
| DE60133376T2 (de) | 2009-04-23 |
| KR20030010601A (ko) | 2003-02-05 |
| DE60133376D1 (de) | 2008-05-08 |
| EP1275135B1 (en) | 2008-03-26 |
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