JP2003531489A - ウェハーを熱処理する方法および装置 - Google Patents

ウェハーを熱処理する方法および装置

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Publication number
JP2003531489A
JP2003531489A JP2001577590A JP2001577590A JP2003531489A JP 2003531489 A JP2003531489 A JP 2003531489A JP 2001577590 A JP2001577590 A JP 2001577590A JP 2001577590 A JP2001577590 A JP 2001577590A JP 2003531489 A JP2003531489 A JP 2003531489A
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JP
Japan
Prior art keywords
wafer
zone
gas
processing chamber
processing
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2001577590A
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English (en)
Japanese (ja)
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JP2003531489A5 (enExample
Inventor
エスアール ジェイムス ジェイ メズィー
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Individual
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Individual
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Application filed by Individual filed Critical Individual
Publication of JP2003531489A publication Critical patent/JP2003531489A/ja
Publication of JP2003531489A5 publication Critical patent/JP2003531489A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
JP2001577590A 2000-04-17 2001-04-12 ウェハーを熱処理する方法および装置 Pending JP2003531489A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/550,888 2000-04-17
US09/550,888 US6331212B1 (en) 2000-04-17 2000-04-17 Methods and apparatus for thermally processing wafers
PCT/US2001/040511 WO2001080291A1 (en) 2000-04-17 2001-04-12 Methods and apparatus for thermally processing wafers

Publications (2)

Publication Number Publication Date
JP2003531489A true JP2003531489A (ja) 2003-10-21
JP2003531489A5 JP2003531489A5 (enExample) 2011-10-20

Family

ID=24198985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001577590A Pending JP2003531489A (ja) 2000-04-17 2001-04-12 ウェハーを熱処理する方法および装置

Country Status (10)

Country Link
US (2) US6331212B1 (enExample)
EP (1) EP1275135B1 (enExample)
JP (1) JP2003531489A (enExample)
KR (1) KR100793329B1 (enExample)
CN (1) CN1199236C (enExample)
AT (1) ATE390705T1 (enExample)
AU (1) AU2001253890A1 (enExample)
DE (1) DE60133376T2 (enExample)
TW (1) TW529059B (enExample)
WO (1) WO2001080291A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
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JP2015524998A (ja) * 2012-07-09 2015-08-27 サン−ゴバン グラス フランスＳａｉｎｔ−Ｇｏｂａｉｎ Ｇｌａｓｓ Ｆｒａｎｃｅ コーティングされた基板を処理するための、プロセスボックス、装置及び方法
JP2015530478A (ja) * 2012-07-09 2015-10-15 サン−ゴバン グラス フランスＳａｉｎｔ−Ｇｏｂａｉｎ Ｇｌａｓｓ Ｆｒａｎｃｅ 基板を処理するためのシステムと方法
WO2025226001A1 (ko) * 2024-04-25 2025-10-30 주식회사 테스 화학기상증착장치

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* Cited by examiner, † Cited by third party
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JP2015524998A (ja) * 2012-07-09 2015-08-27 サン−ゴバン グラス フランスＳａｉｎｔ−Ｇｏｂａｉｎ Ｇｌａｓｓ Ｆｒａｎｃｅ コーティングされた基板を処理するための、プロセスボックス、装置及び方法
JP2015530478A (ja) * 2012-07-09 2015-10-15 サン−ゴバン グラス フランスＳａｉｎｔ−Ｇｏｂａｉｎ Ｇｌａｓｓ Ｆｒａｎｃｅ 基板を処理するためのシステムと方法
WO2025226001A1 (ko) * 2024-04-25 2025-10-30 주식회사 테스 화학기상증착장치

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US20010046768A1 (en) 2001-11-29
WO2001080291A1 (en) 2001-10-25
US6774060B2 (en) 2004-08-10
ATE390705T1 (de) 2008-04-15
CN1199236C (zh) 2005-04-27
AU2001253890A1 (en) 2001-10-30
WO2001080291B1 (en) 2002-02-21
EP1275135B1 (en) 2008-03-26
DE60133376T2 (de) 2009-04-23
US6331212B1 (en) 2001-12-18
TW529059B (en) 2003-04-21
HK1057130A1 (en) 2004-03-12
EP1275135A1 (en) 2003-01-15

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