ATE69897T1 - Hochleistungsfluessigkristallanzeigevorrichtung und verfahren zur herstellung. - Google Patents

Hochleistungsfluessigkristallanzeigevorrichtung und verfahren zur herstellung.

Info

Publication number
ATE69897T1
ATE69897T1 AT85106417T AT85106417T ATE69897T1 AT E69897 T1 ATE69897 T1 AT E69897T1 AT 85106417 T AT85106417 T AT 85106417T AT 85106417 T AT85106417 T AT 85106417T AT E69897 T1 ATE69897 T1 AT E69897T1
Authority
AT
Austria
Prior art keywords
isolation devices
quickly
redundant
subassembly
liquid crystal
Prior art date
Application number
AT85106417T
Other languages
English (en)
Inventor
Zvi Yaniv
Vincent D Cannella
Gregory L Hansell
Robert Royce Johnson
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of ATE69897T1 publication Critical patent/ATE69897T1/de

Links

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/16—Error detection or correction of the data by redundancy in hardware
    • G06F11/20—Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • H10W20/494—Fuses, i.e. interconnections changeable from conductive to non-conductive changeable by the use of an external beam, e.g. laser beam or ion beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S359/00—Optical: systems and elements
    • Y10S359/90—Methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Quality & Reliability (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
AT85106417T 1984-06-29 1985-05-24 Hochleistungsfluessigkristallanzeigevorrichtung und verfahren zur herstellung. ATE69897T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/626,214 US4666252A (en) 1984-06-29 1984-06-29 High yield liquid crystal display and method of making same
EP85106417A EP0166225B1 (de) 1984-06-29 1985-05-24 Hochleistungsflüssigkristallanzeigevorrichtung und Verfahren zur Herstellung

Publications (1)

Publication Number Publication Date
ATE69897T1 true ATE69897T1 (de) 1991-12-15

Family

ID=24509439

Family Applications (1)

Application Number Title Priority Date Filing Date
AT85106417T ATE69897T1 (de) 1984-06-29 1985-05-24 Hochleistungsfluessigkristallanzeigevorrichtung und verfahren zur herstellung.

Country Status (6)

Country Link
US (1) US4666252A (de)
EP (1) EP0166225B1 (de)
JP (1) JPS6135483A (de)
AT (1) ATE69897T1 (de)
CA (1) CA1253606A (de)
DE (1) DE3584740D1 (de)

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JPS62135814A (ja) * 1985-12-10 1987-06-18 Fuji Electric Co Ltd 液晶マトリクス表示装置
JP2816549B2 (ja) * 1986-10-22 1998-10-27 セイコーインスツルメンツ株式会社 電気光学装置
JPH0627985B2 (ja) * 1987-05-06 1994-04-13 日本電気株式会社 薄膜トランジスタアレイ
GB2206721A (en) * 1987-07-03 1989-01-11 Philips Electronic Associated Active matrix display device
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JP2607537B2 (ja) * 1987-08-24 1997-05-07 株式会社日立製作所 テレビジョン信号処理回路
JP2627071B2 (ja) * 1988-01-26 1997-07-02 キヤノン株式会社 光変調素子
JPH0814668B2 (ja) * 1988-02-16 1996-02-14 シャープ株式会社 マトリックス型液晶表示パネル
GB2215506A (en) * 1988-02-24 1989-09-20 Philips Electronic Associated Matrix display devices
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JPH0786616B2 (ja) * 1989-03-28 1995-09-20 シャープ株式会社 アクティブマトリクス表示装置の製造方法
JPH0321928A (ja) * 1989-06-19 1991-01-30 Nec Corp アクティブ液晶パネルの製造方法
US5062690A (en) * 1989-06-30 1991-11-05 General Electric Company Liquid crystal display with redundant FETS and redundant crossovers connected by laser-fusible links
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US5392143A (en) * 1989-11-30 1995-02-21 Kabushiki Kaisha Toshiba Liquid crystal display having drain and pixel electrodes linkable to a wiring line having a potential
NL9000290A (nl) * 1990-02-07 1991-09-02 Philips Nv Weergeefinrichting.
EP0717303B1 (de) * 1990-05-11 2003-05-02 Sharp Kabushiki Kaisha Anzeigevorrichtung mit aktiver Matrix , Verfahren zu ihrer Herstellung und Verfahren zur Behandlung defekter Pixel
JPH0421823A (ja) * 1990-05-16 1992-01-24 Hosiden Corp 液晶表示素子の点欠陥の黒欠陥化法及び液晶表示素子
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US5557136A (en) * 1991-04-26 1996-09-17 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
WO1992020095A1 (en) * 1991-04-26 1992-11-12 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
US5701027A (en) * 1991-04-26 1997-12-23 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
JPH0667142A (ja) * 1992-08-21 1994-03-11 Fujitsu Ltd 空間光変調装置
US5517027A (en) * 1993-06-08 1996-05-14 Mitsubishi Denki Kabushiki Kaisha Method for detecting and examining slightly irregular surface states, scanning probe microscope therefor, and method for fabricating a semiconductor device or a liquid crystal display device using these
US5555001A (en) * 1994-03-08 1996-09-10 Prime View Hk Limited Redundant scheme for LCD display with integrated data driving circuit
US5694146A (en) * 1994-10-14 1997-12-02 Energy Conversion Devices, Inc. Active matrix LCD array employing thin film chalcogenide threshold switches to isolate individual pixels
US5831276A (en) * 1995-06-07 1998-11-03 Micron Technology, Inc. Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
US5869843A (en) * 1995-06-07 1999-02-09 Micron Technology, Inc. Memory array having a multi-state element and method for forming such array or cells thereof
US6420725B1 (en) * 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
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JPH10133216A (ja) * 1996-11-01 1998-05-22 Hitachi Ltd アクティブマトリクス型液晶表示装置
US6653733B1 (en) 1996-02-23 2003-11-25 Micron Technology, Inc. Conductors in semiconductor devices
US6025220A (en) 1996-06-18 2000-02-15 Micron Technology, Inc. Method of forming a polysilicon diode and devices incorporating such diode
JP3097829B2 (ja) * 1996-07-11 2000-10-10 日本電気株式会社 液晶表示パネルおよびその補修方法
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US5985698A (en) * 1996-07-22 1999-11-16 Micron Technology, Inc. Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell
US6337266B1 (en) 1996-07-22 2002-01-08 Micron Technology, Inc. Small electrode for chalcogenide memories
US5814527A (en) * 1996-07-22 1998-09-29 Micron Technology, Inc. Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories
US5998244A (en) * 1996-08-22 1999-12-07 Micron Technology, Inc. Memory cell incorporating a chalcogenide element and method of making same
US5812441A (en) * 1996-10-21 1998-09-22 Micron Technology, Inc. MOS diode for use in a non-volatile memory cell
US6015977A (en) 1997-01-28 2000-01-18 Micron Technology, Inc. Integrated circuit memory cell having a small active area and method of forming same
US5952671A (en) * 1997-05-09 1999-09-14 Micron Technology, Inc. Small electrode for a chalcogenide switching device and method for fabricating same
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Also Published As

Publication number Publication date
DE3584740D1 (de) 1992-01-09
EP0166225B1 (de) 1991-11-27
EP0166225A3 (en) 1988-07-13
CA1253606A (en) 1989-05-02
EP0166225A2 (de) 1986-01-02
JPS6135483A (ja) 1986-02-19
US4666252A (en) 1987-05-19

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