JPS5478984A - Evaluation method of film quality for insulation film - Google Patents

Evaluation method of film quality for insulation film

Info

Publication number
JPS5478984A
JPS5478984A JP14670477A JP14670477A JPS5478984A JP S5478984 A JPS5478984 A JP S5478984A JP 14670477 A JP14670477 A JP 14670477A JP 14670477 A JP14670477 A JP 14670477A JP S5478984 A JPS5478984 A JP S5478984A
Authority
JP
Japan
Prior art keywords
film
defects
liquid crystal
electrode
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14670477A
Other languages
Japanese (ja)
Other versions
JPS594854B2 (en
Inventor
Sunao Nishioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14670477A priority Critical patent/JPS594854B2/en
Publication of JPS5478984A publication Critical patent/JPS5478984A/en
Publication of JPS594854B2 publication Critical patent/JPS594854B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To evaluate the film quality by changing the strength of electric field applied to the insulation film, through the application of dynamic scattering phenomenon of nematic liquid crystal.
CONSTITUTION: The test piece 100 has the SiO2 film 2 including defects 3 on the substrate 1. The Al electrode 4 is formed on the film 2, nematic liquid crystal film 5 is coated, and the transparent conductive film 6 coated on the glass plate 7 is laminated. The insulation spacer 8 is inserted between the Al elctrode around the test piece and the conductive film 6. Next, variable DC voltage 9 is applied between the Si substrate 1 and the transparent conductive film 6. If the DC voltage has the value more than the threshold value causing dynamic scatter phenomenon to the liquid crystal 5 and the defects 3 are pin holes causing leakage between the electrode 4 and the substrate 1, the liquid crystal film on the Al electrode having defects 3 causes dynamic scattering phenomenon. Further, the defects due to defective break down voltage causes leakage as well as scattering phenomenon. Thus, no probe is required and the number of defects and position are easily detected, and by changing the applied voltage, the nature of defects can be known from the change in the reflection rate of the conductive electrode group from manu aspects.
COPYRIGHT: (C)1979,JPO&Japio
JP14670477A 1977-12-06 1977-12-06 Insulating film quality evaluation method Expired JPS594854B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14670477A JPS594854B2 (en) 1977-12-06 1977-12-06 Insulating film quality evaluation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14670477A JPS594854B2 (en) 1977-12-06 1977-12-06 Insulating film quality evaluation method

Publications (2)

Publication Number Publication Date
JPS5478984A true JPS5478984A (en) 1979-06-23
JPS594854B2 JPS594854B2 (en) 1984-02-01

Family

ID=15413650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14670477A Expired JPS594854B2 (en) 1977-12-06 1977-12-06 Insulating film quality evaluation method

Country Status (1)

Country Link
JP (1) JPS594854B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0532685Y2 (en) * 1986-03-26 1993-08-20

Also Published As

Publication number Publication date
JPS594854B2 (en) 1984-02-01

Similar Documents

Publication Publication Date Title
AU2967289A (en) Devices for use in chemical test procedures
JPS5633850A (en) Analysis for defective semiconductor element
JPS5616112A (en) Liquid crystal display unit
Arbizzani et al. An electrochromic window based on polymethyl thiophene and nickel oxide electrodes
DE2809335C2 (en) Process for the production of a layer delimiting the liquid crystal film of a light modulator
JPS5478984A (en) Evaluation method of film quality for insulation film
JPS5775438A (en) Semiconductor element
Henrich et al. Pulsed Ultrasonic Studies of the Acoustoelectric Effect, Ultrasonic Attenuation, and Trapping in CdS
JPS5467776A (en) Film quality evaluating method of insulation film
JPS5856973B2 (en) Insulating film defect detection device
JPS5482174A (en) Quality evaluating device for insulating film
JPS5624351A (en) Gravure resist inspecting method
JPS5322477A (en) Measuring jig
JPS5680027A (en) Color liquid crystal display device
JPS53147557A (en) Liquid crystal display element
JPS55128163A (en) Method for measurement of resistance of conductive cover
JPS55122171A (en) Method of testing semiconductor unit
JPS5412840A (en) Measuring method for surface potential of electrophotographic photoreceptor by time series
JPH05203898A (en) Liquid crystal display device
JPS57128938A (en) Device for measuring characteristic of semiconductor
JPS55138610A (en) Simple type analog meter
JPS5268429A (en) Liquid crystal display device
JPS5760314A (en) Electrochromic display device
JPS5596650A (en) Method of estimating quality of gate oxide film
JPS5694641A (en) Semiconductor device for testing reliability