JPS5467776A - Film quality evaluating method of insulation film - Google Patents

Film quality evaluating method of insulation film

Info

Publication number
JPS5467776A
JPS5467776A JP13492977A JP13492977A JPS5467776A JP S5467776 A JPS5467776 A JP S5467776A JP 13492977 A JP13492977 A JP 13492977A JP 13492977 A JP13492977 A JP 13492977A JP S5467776 A JPS5467776 A JP S5467776A
Authority
JP
Japan
Prior art keywords
film
liquid crystal
increment
counting
insulation film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13492977A
Other languages
Japanese (ja)
Other versions
JPS5827662B2 (en
Inventor
Sunao Nishioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13492977A priority Critical patent/JPS5827662B2/en
Publication of JPS5467776A publication Critical patent/JPS5467776A/en
Publication of JPS5827662B2 publication Critical patent/JPS5827662B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To perform detailed film quality evaluation by applying the dynamical scattering phenomena of nematic liquid crystal with respect to the evaluation of pinhole defects and dielectric strength defects except the evalution on mobile ions and changing the intensity of the electric field being applied to insulation film.
CONSTITUTION: After a conductive electrode group 4 is formed on the insulation film 2 having been formed on a semiconductor substrate 1, a nematic liqudi crystal film 5 is covered thereon and a transparent conductive film 6 is placed in contact with the liquid crystal film 5. A d.c. voltage of a positive potential on the substrate 1 and a negative potential on the transparent conductive film 6 is then applied. In the case of counting the number of the conductive electrodes under the liquid crystal film 5 where the dynamical scattering phenomena occure, the operation of counting the number of conductive electrodes accompanying the dynamical scattering before adding an increment to the d.c. voltage value and after subtracting the increment after adding the same respectively is performed by increasing the d.c. voltage value.
COPYRIGHT: (C)1979,JPO&Japio
JP13492977A 1977-11-09 1977-11-09 Insulating film quality evaluation method Expired JPS5827662B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13492977A JPS5827662B2 (en) 1977-11-09 1977-11-09 Insulating film quality evaluation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13492977A JPS5827662B2 (en) 1977-11-09 1977-11-09 Insulating film quality evaluation method

Publications (2)

Publication Number Publication Date
JPS5467776A true JPS5467776A (en) 1979-05-31
JPS5827662B2 JPS5827662B2 (en) 1983-06-10

Family

ID=15139843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13492977A Expired JPS5827662B2 (en) 1977-11-09 1977-11-09 Insulating film quality evaluation method

Country Status (1)

Country Link
JP (1) JPS5827662B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132045A (en) * 1981-02-09 1982-08-16 Seiko Epson Corp Pin hole tester

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132045A (en) * 1981-02-09 1982-08-16 Seiko Epson Corp Pin hole tester
JPH0152690B2 (en) * 1981-02-09 1989-11-09 Seiko Epson Corp

Also Published As

Publication number Publication date
JPS5827662B2 (en) 1983-06-10

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