JPS55122171A - Method of testing semiconductor unit - Google Patents

Method of testing semiconductor unit

Info

Publication number
JPS55122171A
JPS55122171A JP2970079A JP2970079A JPS55122171A JP S55122171 A JPS55122171 A JP S55122171A JP 2970079 A JP2970079 A JP 2970079A JP 2970079 A JP2970079 A JP 2970079A JP S55122171 A JPS55122171 A JP S55122171A
Authority
JP
Japan
Prior art keywords
film
electrode terminal
produced
photoresist
semiconductor unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2970079A
Other languages
Japanese (ja)
Inventor
Tsuneo Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2970079A priority Critical patent/JPS55122171A/en
Publication of JPS55122171A publication Critical patent/JPS55122171A/en
Pending legal-status Critical Current

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Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE: To avoid the adverse effect of irradiated light in measurement, by coating an Al film except on the electrode terminal face of a semiconductor unit produced on the surface of a semiconductor substrate by a photoresist method, and thereafter bringing a measuring probe into contact with the electrode terminal.
CONSTITUTION: A phosphosilicate glass film 7 is produced except on one electrode terminal 2 of a semiconductor unit 1 manufactured on a semiconductor substrate of a tested body. A photoresist film 8 is selectively provided on the film 7. An Al film 9 is produced on the entire surface of the film 8. The photoresist film 8 is thereafter removed by a lifting-off method. At the same time, the Al layer on the film 8 is also removed. As a result, the surface of the electrode terminal 2 is exposed. A second photoresist layer 10 having an opening on the surface of the electrode terminal is produced. The semiconductor unit is thus treated. A measuring probe 4 is brought into contact with the electrode terminal 2 to test the electric properties of the unit 1.
COPYRIGHT: (C)1980,JPO&Japio
JP2970079A 1979-03-14 1979-03-14 Method of testing semiconductor unit Pending JPS55122171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2970079A JPS55122171A (en) 1979-03-14 1979-03-14 Method of testing semiconductor unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2970079A JPS55122171A (en) 1979-03-14 1979-03-14 Method of testing semiconductor unit

Publications (1)

Publication Number Publication Date
JPS55122171A true JPS55122171A (en) 1980-09-19

Family

ID=12283382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2970079A Pending JPS55122171A (en) 1979-03-14 1979-03-14 Method of testing semiconductor unit

Country Status (1)

Country Link
JP (1) JPS55122171A (en)

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