JPS5717873A - Inspection method of semiconductor element - Google Patents

Inspection method of semiconductor element

Info

Publication number
JPS5717873A
JPS5717873A JP9243680A JP9243680A JPS5717873A JP S5717873 A JPS5717873 A JP S5717873A JP 9243680 A JP9243680 A JP 9243680A JP 9243680 A JP9243680 A JP 9243680A JP S5717873 A JPS5717873 A JP S5717873A
Authority
JP
Japan
Prior art keywords
semiconductor element
defect
stamp
measuring
measured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9243680A
Other languages
Japanese (ja)
Inventor
Yoshihiro Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9243680A priority Critical patent/JPS5717873A/en
Publication of JPS5717873A publication Critical patent/JPS5717873A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/265Contactless testing
    • G01R31/2656Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE:To prevent omission of a defect stamp in the test of semiconductor element and accomplish a highly reliable inspection by adding a detecting method of a defect stamp. CONSTITUTION:Electrical information is applied to each electrode in the condition that a probe 2 is made to contact with electrodes of a semiconductor element of a semiconductor wafer 1, and its change is detected for measuring electrical characteristics of the semiconductor element to be measured. Based on this result, if the measuring semiconductor element is out of the specilfication, after the surface reflectvity of the measuring semiconductor element is measured by the light source 4 and a photodetecting part 5, and ink marker 3 is worked to apply a defect stamp. Then, the surface reflectivity of the measuring semiconductor element is again measured, and this value is compared with the numerical value before the stamping the defect mark, if its difference is not greater than 25%, a defect stamp is applied again, and this operation is repeated. Thus, unclearness of the defect stamp and mismark can be eliminated and a test of high reliability can be carried out.
JP9243680A 1980-07-04 1980-07-04 Inspection method of semiconductor element Pending JPS5717873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9243680A JPS5717873A (en) 1980-07-04 1980-07-04 Inspection method of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9243680A JPS5717873A (en) 1980-07-04 1980-07-04 Inspection method of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5717873A true JPS5717873A (en) 1982-01-29

Family

ID=14054375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9243680A Pending JPS5717873A (en) 1980-07-04 1980-07-04 Inspection method of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5717873A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116163A (en) * 1982-12-16 1984-07-04 デイナミ−ト・ノ−ベル・アクチエンゲゼルシヤフト Manufacture of hardenable water-containing molding material and molded body
JPS6024031A (en) * 1983-07-19 1985-02-06 Telmec Co Ltd Semiconductor wafer prober
JPH08274133A (en) * 1993-05-18 1996-10-18 Tokyo Electron Ltd Semiconductor wafer prober

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116163A (en) * 1982-12-16 1984-07-04 デイナミ−ト・ノ−ベル・アクチエンゲゼルシヤフト Manufacture of hardenable water-containing molding material and molded body
JPH0445471B2 (en) * 1982-12-16 1992-07-24 Dynamit Nobel Ag
JPS6024031A (en) * 1983-07-19 1985-02-06 Telmec Co Ltd Semiconductor wafer prober
JPH0441496B2 (en) * 1983-07-19 1992-07-08 Tokyo Electron Ltd
JPH08274133A (en) * 1993-05-18 1996-10-18 Tokyo Electron Ltd Semiconductor wafer prober

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