JPS61154044A - Probe card of prober - Google Patents
Probe card of proberInfo
- Publication number
- JPS61154044A JPS61154044A JP28061684A JP28061684A JPS61154044A JP S61154044 A JPS61154044 A JP S61154044A JP 28061684 A JP28061684 A JP 28061684A JP 28061684 A JP28061684 A JP 28061684A JP S61154044 A JPS61154044 A JP S61154044A
- Authority
- JP
- Japan
- Prior art keywords
- probe card
- electrodes
- substrate
- probe
- elasticity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体素子の製造、特性測定および検査に使用
するプローバーのプローブカー1’KIgtる。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a probe car 1'KIgt of a prober used for manufacturing, measuring and inspecting characteristics of semiconductor devices.
半導体素子において、篤つェハー全[特性の良いものを
作ることは困難であり、ごく一部の不良のために、素子
全体が不良となってしまうものが多々ある。これを防ぐ
ために各部の特性を調べ、不良部分があった場合、それ
なりの処置を施すことは、半導体素子の製造においてあ
る程度の歩留まりを維持するため重要である。また、処
置を施さないまでも、特性を確認することは不可欠であ
る。この特性測定のための装置が一般にプロパーと呼ば
れるものであり、測定物に圧接するため、基板κ探針を
配置したものをプローバーのプローブカードという●
43図は従来のプローブカードを示す下面図で、プロー
ブカードは基板IK複数の探針2が設けられ構成されて
いる。一般にこのようなプローブカードは基板lに探針
2が何本もあり、一度に半導体素子の多数の部所を測定
できるようになっている。It is difficult to manufacture semiconductor devices with good characteristics across the entire wafer, and there are many cases where the entire device becomes defective due to a defect in just a small part of the wafer. To prevent this, it is important to examine the characteristics of each part and, if a defective part is found, take appropriate measures to maintain a certain level of yield in the manufacture of semiconductor devices. Furthermore, even if no treatment is taken, it is essential to confirm the characteristics. The device for measuring this characteristic is generally called a proper, and the one on which the substrate κ probe is placed in pressure contact with the object to be measured is called a prober probe card.● Figure 43 is a bottom view of a conventional probe card. , the probe card is composed of a substrate IK and a plurality of probes 2. Generally, such a probe card has a number of probes 2 on a substrate 1, so that it is possible to measure many parts of a semiconductor device at once.
第4図は第3図のプローブカードを測定物に圧接した状
態を示す正面図で、3はシリコンなどの半導体素子の基
板、4は半導体素子の電極であり、図示の如くプローブ
カードを配置し、カーブトレーサ−(図示せず)などを
用いて特性を測定している。FIG. 4 is a front view showing the state in which the probe card shown in FIG. 3 is pressed into contact with the object to be measured. 3 is a substrate of a semiconductor element such as silicon, 4 is an electrode of the semiconductor element, and the probe card is arranged as shown in the figure. The characteristics are measured using a curve tracer (not shown) or the like.
一般に半導体素子は、ミクロン単位の精度で製造されて
いるので、プローブカードの探針2もミクロン単位で製
造しなくてならず、これは現在の技術では精度に限界が
あり、測定箇所のピッチがつまった場合、製造できない
。また、探針2が露出していて保護しKくく、ちょっと
した衝撃で精度が狂いやすく、さらに探針2を押し付け
ることにより電極4を傷つけ、下手をすると下のシリコ
ンなどの半導体素子の基板3をも傷つけかねないので、
使用または保存にかなりの注意を必要とする。さらに探
針2と半導体素子の電極4の位置合わせは、実体合わせ
となるので、それなりの修練を必要とし、各種の半導体
素子ごとに位置合わせ法を考慮しなくてはならない。Semiconductor devices are generally manufactured with precision in the micron range, so the probes 2 of the probe card must also be manufactured in the micron range, and current technology has limits to accuracy and the pitch of the measurement points is limited. If it is clogged, it cannot be manufactured. In addition, the probe 2 is exposed and difficult to protect, and the accuracy is easily lost due to a slight impact.Furthermore, pressing the probe 2 may damage the electrode 4, and if done incorrectly, the underlying substrate 3 of semiconductor elements such as silicon may be damaged. It may also injure the
Requires considerable care in use or storage. Furthermore, since the alignment of the probe 2 and the electrode 4 of the semiconductor element involves physical alignment, a certain amount of training is required, and the alignment method must be considered for each type of semiconductor element.
本発明は上述した問題点を解消するもので、プローブカ
ードの電極の配置に写真印刷技術を用いて精度よく仕上
げ、測定箇所が多いものも測定でき、取り扱いの容易な
プローバーのプローブカードを提供することを目的とし
ている。The present invention solves the above-mentioned problems, and provides a probe card for a probe card that uses photo printing technology to arrange the electrodes of the probe card with high accuracy, can measure objects with many measurement points, and is easy to handle. The purpose is to
本発明はプローブカードの基板にガラスなどの透明材を
用い、プローブカードの電極には導電性のゴムなどの伸
縮性をもりた導体を用い、電極のプローブカードの基板
への配置は写真印刷技術などによって行い、精度よく仕
上げるようにしたものである。The present invention uses a transparent material such as glass for the substrate of the probe card, uses a stretchable conductor such as conductive rubber for the electrodes of the probe card, and uses photo printing technology to arrange the electrodes on the substrate of the probe card. This was done using a method to ensure a highly accurate finish.
本発明は従来の探針に相当するプローブカードの電極を
、半導体素子の電極パターンにそつて、写真印刷技術な
どにより精度よく仕上げるので、精度が問題で測定でき
ないというものはなく、また構造的にある程度面積を持
たせることができるので、多少傷ついたり、はがれたり
しても使用に耐え、取り扱いも楽である。測定の場合は
直接、半導体素子の電極を圧接して測定する。したがり
て、半導体素子のソリなどは、プローブカードの電極の
伸縮性で吸収できる。In the present invention, the electrode of the probe card, which corresponds to the conventional probe, is precisely finished using photo printing technology along the electrode pattern of the semiconductor element, so there is no problem with accuracy that prevents measurement, and there is no problem with the structure. Since it can have a certain area, it can withstand use even if it is slightly damaged or peeled off, and is easy to handle. In the case of measurement, the electrodes of the semiconductor element are directly pressed against each other. Therefore, warping of the semiconductor element can be absorbed by the elasticity of the electrodes of the probe card.
第1図は本発明によるプローバーのプローブカードの一
実施例を示す下面図で、図中、11はプローブカードの
基板、12はプローブカードの電極、13は位置合わせ
マークである。プローブカードの基板11はガラスなど
の透明材を用いる。プローブカードの電極12は、導電
性のゴムなどの伸縮性をもりた導体を用い、写真印刷技
術などによりてプローブカードの基板11に配置されて
いる。位置合わせマーク13はプローブカードの基板1
1に装着されている。な右、測定のため、この各電極1
2からアルミニウムや鋼などのプリント配線、または基
板11に導線をモールドして線を引き出しておく。FIG. 1 is a bottom view showing one embodiment of a probe card of a prober according to the present invention. In the figure, 11 is a substrate of the probe card, 12 is an electrode of the probe card, and 13 is an alignment mark. The substrate 11 of the probe card is made of a transparent material such as glass. The electrodes 12 of the probe card are made of a stretchable conductor such as conductive rubber, and are arranged on the substrate 11 of the probe card by photo printing technology or the like. The alignment mark 13 is on the substrate 1 of the probe card.
It is installed on 1. On the right, for measurement, each electrode 1
From 2, conductive wires are molded on printed wiring made of aluminum or steel, or on the board 11, and the wires are drawn out.
この発明は、従来の探針に相当するプローブカードの電
極12を半導体素子の電極パターンにそって構成し、直
接素子の電極を圧接して測定するものである。したがっ
て、半導体素子のソリなどは、このプローブカードの電
極12の伸縮性で吸収できる。また、素子の特性に影響
しないような部分に位置合わせマーク13をつけている
ので、素子とプローブカードの位置合わせが容易にでき
る。In this invention, the electrode 12 of a probe card, which corresponds to a conventional probe, is constructed along the electrode pattern of a semiconductor element, and measurements are made by directly pressing the electrode of the element. Therefore, warping of the semiconductor element can be absorbed by the elasticity of the electrode 12 of this probe card. Furthermore, since the alignment mark 13 is provided in a portion that does not affect the characteristics of the element, alignment between the element and the probe card can be easily performed.
第2図は第1図のプローバーのプローブカードを測定物
に圧接した状態を示す正面図で、14はシリコンなどの
半導体素子の基板、15は半導体素子の電極であり、図
示の如くプローブカードを配置し、従来と同様にカーブ
トレーサー(図示せず)などを用いて特性を測定する。FIG. 2 is a front view showing the state in which the probe card of the prober shown in FIG. Then, the characteristics are measured using a curve tracer (not shown) or the like in the same way as before.
このように、本発明はプローブカードの電極12の配置
に写真印刷技術を用いているのでかなり精度よく仕上げ
ることができ、現在、半導体素子自体も写真印刷技術に
よってパターンづけられているので、精度が問題で測定
できないというものはなく、また構造的にある程度面積
を持たせることができるので、多少傷ついたり、はがれ
たりしても使用に耐え、取り扱いも探針型のものに比べ
格段に楽である。そしてマスターさえ作れば、あとは容
易にコピーによりて作れるので、安価にでき、また位置
合わせマークを付けているので位置合わせを容易にする
ことができ、またさらに、配線もプリントやモールドな
どにすることができるので形を非常に簡易にすることが
できる。As described above, since the present invention uses photo printing technology to arrange the electrodes 12 of the probe card, it can be finished with high precision.Currently, semiconductor elements themselves are also patterned using photo printing technology, so accuracy can be improved. There are no problems that prevent measurement, and since the structure can be made to have a certain area, it can withstand use even if it gets scratched or peeled off, and it is much easier to handle than a probe type. . Once the master is created, the rest can be easily made by copying, so it can be done inexpensively, and alignment marks are attached to make alignment easier.Furthermore, the wiring can be printed or molded. Therefore, the shape can be made very simple.
上述したように本発明は、プローブカードの電極の配置
に写真印刷技術を用いているのでかなり精度よく仕上げ
ることができ、測定箇所が多いものも精度よく測定でき
、また位置合わせ作業を容易にすることができ、さらに
また取り扱いが容易で安価にできる。As mentioned above, the present invention uses photo printing technology to arrange the electrodes of the probe card, so it can be finished with high precision, and even objects with many measurement points can be measured with high precision, and alignment work is facilitated. Furthermore, it is easy to handle and inexpensive.
s1図は本発明によるプローバーのプローブカードの一
実施例を示す下面図、第2図は第1図のプローバーのプ
ローブカードを測定物に圧接した状態を示す正面図、第
3図は従来のプローブカードを示す下面図、第4図は第
3図のプローブカードを測定物に圧接した状態を示す正
面図である01.11・・・・・・プローブカードの基
板、2・・・・・・プローブカードの探針、3.14・
・・・・・半導体素子の基板、4.15・・・・・・半
導体素子の電極、12・・・・・・プローブカードの電
極、13・・・・・・プローブカードの基板11に設け
た位置合わせマーク。Fig. s1 is a bottom view showing an embodiment of the probe card of the prober according to the present invention, Fig. 2 is a front view showing the state in which the probe card of the prober of Fig. 1 is pressed against the object to be measured, and Fig. 3 is a conventional probe. A bottom view showing the card, and FIG. 4 is a front view showing the state in which the probe card shown in FIG. Probe card probe, 3.14・
... Substrate of semiconductor element, 4.15 ... Electrode of semiconductor element, 12 ... Electrode of probe card, 13 ... Provided on substrate 11 of probe card alignment marks.
Claims (1)
導電性のゴムなどの伸縮性をもった導体からなる電極を
はりつけ、該電極を被測定物に圧接するようにしたこと
を特徴とするプローバーのプローブカード。The probe card substrate is made of transparent material such as glass.
A probe card for a prober, characterized in that an electrode made of a stretchable conductor such as conductive rubber is attached and the electrode is pressed into contact with an object to be measured.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28061684A JPS61154044A (en) | 1984-12-26 | 1984-12-26 | Probe card of prober |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28061684A JPS61154044A (en) | 1984-12-26 | 1984-12-26 | Probe card of prober |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61154044A true JPS61154044A (en) | 1986-07-12 |
JPH0515068B2 JPH0515068B2 (en) | 1993-02-26 |
Family
ID=17627522
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28061684A Granted JPS61154044A (en) | 1984-12-26 | 1984-12-26 | Probe card of prober |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61154044A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03504657A (en) * | 1988-05-16 | 1991-10-09 | リーディ,グレン ジェイ. | Integrated circuit manufacturing and testing methods, and integrated circuit testing equipment |
WO2004015432A1 (en) * | 2002-07-15 | 2004-02-19 | Formfactor, Inc. | Fiducial alignment marks on microelectronic spring contacts |
US6933738B2 (en) | 2001-07-16 | 2005-08-23 | Formfactor, Inc. | Fiducial alignment marks on microelectronic spring contacts |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5811739A (en) * | 1981-07-15 | 1983-01-22 | Nippon Kokan Kk <Nkk> | Heating method of low manganese-low aluminum slab |
JPS59144142A (en) * | 1983-02-08 | 1984-08-18 | Nec Corp | Probe card |
JPS59214235A (en) * | 1983-05-20 | 1984-12-04 | Ibiden Co Ltd | Method and apparatus for inspecting semiconductor wafer |
-
1984
- 1984-12-26 JP JP28061684A patent/JPS61154044A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5811739A (en) * | 1981-07-15 | 1983-01-22 | Nippon Kokan Kk <Nkk> | Heating method of low manganese-low aluminum slab |
JPS59144142A (en) * | 1983-02-08 | 1984-08-18 | Nec Corp | Probe card |
JPS59214235A (en) * | 1983-05-20 | 1984-12-04 | Ibiden Co Ltd | Method and apparatus for inspecting semiconductor wafer |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03504657A (en) * | 1988-05-16 | 1991-10-09 | リーディ,グレン ジェイ. | Integrated circuit manufacturing and testing methods, and integrated circuit testing equipment |
US6933738B2 (en) | 2001-07-16 | 2005-08-23 | Formfactor, Inc. | Fiducial alignment marks on microelectronic spring contacts |
WO2004015432A1 (en) * | 2002-07-15 | 2004-02-19 | Formfactor, Inc. | Fiducial alignment marks on microelectronic spring contacts |
CN100447573C (en) * | 2002-07-15 | 2008-12-31 | 佛姆费克托公司 | Fiducial alignment mark on microelectronic spring contact |
Also Published As
Publication number | Publication date |
---|---|
JPH0515068B2 (en) | 1993-02-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |