JPH01211936A - Probe for measuring electrical characteristic of semiconductor wafer - Google Patents
Probe for measuring electrical characteristic of semiconductor waferInfo
- Publication number
- JPH01211936A JPH01211936A JP3625188A JP3625188A JPH01211936A JP H01211936 A JPH01211936 A JP H01211936A JP 3625188 A JP3625188 A JP 3625188A JP 3625188 A JP3625188 A JP 3625188A JP H01211936 A JPH01211936 A JP H01211936A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- film
- contact
- probe
- wirings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 239000000523 sample Substances 0.000 title claims abstract description 15
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 abstract description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 238000001259 photo etching Methods 0.000 abstract description 2
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 11
- 239000010949 copper Substances 0.000 description 8
- 238000005259 measurement Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半導体ウェーハ上のＩＣ，ＬＳＩ等のパッド
の電気的特性を測定する為のプローブ針に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a probe needle for measuring the electrical characteristics of pads of ICs, LSIs, etc. on semiconductor wafers.
（従来の技術とその問題点）
従来、第２図に示す半導体ウェーハ１０上のＩＣ１ＬＳ
Ｉ等のパッド１１の電気的特性を測定するのに第３図に
示す如くアルミナ製基板１２へ銅の薄膜より成る配線１
３を取付けたプローブ針１４が使用されていたが、この
プローブ針１４は、弾性が無かった。(Conventional technology and its problems) Conventionally, IC1LS on a semiconductor wafer 10 shown in FIG.
In order to measure the electrical characteristics of pads 11 such as I, wiring 1 made of a thin copper film is attached to an alumina substrate 12 as shown in FIG.
3 was used, but this probe needle 14 had no elasticity.
従って、従来のプローブ針は半導体ウェーハ１０上のＩ
Ｃ，ＬＳＩ等のパッド１１に、高密度端子で弾性接触さ
せて、電気的特性を測定することが困難であった。Therefore, the conventional probe needle
It was difficult to make elastic contact with pads 11 of C, LSI, etc. using high-density terminals and measure electrical characteristics.
（発明の目的）
本発明は上記問題点を解決すべくなされたもので、半導
体ウェーハ上のパッドに、高密度端子で弾性接触させて
電気的特性を測定することのできるプローブ針を提供す
ることを目的とするものである。(Object of the Invention) The present invention has been made to solve the above problems, and it is an object of the present invention to provide a probe needle that can be brought into elastic contact with a pad on a semiconductor wafer using high-density terminals to measure electrical characteristics. The purpose is to
（問題点を解決するための手段）
上記問題点を解決するための本発明の半導体つ工−ハの
電気的特性測定用プローブ針は、ばね性のある基板の上
に、絶縁性薄膜又は誘電体膜が形成され、その上に導電
性薄膜より成る配線が多数本形成されて成るものである
。(Means for Solving the Problems) In order to solve the above problems, a probe needle for measuring electrical characteristics of a semiconductor device according to the present invention is provided with an insulating thin film or a dielectric film on a springy substrate. A body film is formed, and a large number of wirings made of a conductive thin film are formed on the body film.
（作用）
上記の如く構成された本発明の半導体ウェーへの電気的
特性測定用プローブ針は、ばね性の有る。(Function) The probe needle for measuring electrical characteristics of a semiconductor wafer according to the present invention configured as described above has spring properties.
基板に、ホトプロセスにより多数の導電性薄膜の配線が
形成されているので、半導体ウェーハ上のパッドに高密
度端子で弾性接触させることができ、半導体ウェーハの
電気的特性を容易に測定できるものである。Since a large number of conductive thin film wirings are formed on the substrate by photoprocessing, high-density terminals can be brought into elastic contact with pads on the semiconductor wafer, making it easy to measure the electrical characteristics of the semiconductor wafer. be.
（実施例）
本発明による半導体ウェーハの電気的特性測定用プロー
ブ針の一実施例を第１図によって説明すると、厚さ０．
１ｍｍの５ＵＳ３０４より成るばね性のある基板１の表
面に、絶縁性薄膜として厚さ１０μｍのＡｆ、Ｏ，膜２
を設け、その上に導電性薄膜として厚さ２μｍのＣｕ膜
が設けられ、このＣｕ膜、がホトエツチング法により先
端部が１５０μｍ間隔で幅１３０μｍのＣｕ配線３が拡
開方向に形成され、このＣｕ配線３間に幅２０μｍ、長
さ２ｍｍのスリット４が形成されている。 上記実施例
は、基板１が５ＵＳ３０４より成るが、Ｂｅ−Ｃｕでも
良いものである。また金属製の基板に限るものではなく
、ポリカーボネイト等のプラスチック製の基板でも良い
ものである。(Example) An example of the probe needle for measuring the electrical characteristics of a semiconductor wafer according to the present invention will be described with reference to FIG.
A 10 μm thick Af, O, film 2 is applied as an insulating thin film on the surface of a springy substrate 1 made of 1 mm thick 5US304.
A Cu film with a thickness of 2 μm is provided thereon as a conductive thin film, and Cu wiring 3 with a width of 130 μm is formed on this Cu film by a photoetching method with tips of 150 μm apart in the expanding direction. A slit 4 having a width of 20 μm and a length of 2 mm is formed between the wirings 3 . In the above embodiment, the substrate 1 is made of 5US304, but it may also be made of Be-Cu. Further, the substrate is not limited to a metal substrate, and may be a plastic substrate such as polycarbonate.
また上記実施例は、基板１の上に絶縁性薄膜を形成し、
その上に導電性薄膜の配線３を形成した場合であるが、
絶縁性薄膜の代わりに誘電体膜を形成しても良いもので
ある。Further, in the above embodiment, an insulating thin film is formed on the substrate 1,
This is a case where a conductive thin film wiring 3 is formed on it.
A dielectric film may be formed instead of the insulating thin film.
上記実施例のプローブ針は、ばね性のある基板１の上に
、絶縁性薄膜であるＡ ｌ ｚ Ｏ３膜２を介して導電
性薄膜のＣｕ配線３がエツチング法により形成されてい
るので、これを半導体ウェーハ１０上のＩＣ，ＬＳＩ等
のパッド１１に接触させて電気的特性を測定した処、高
周波領域では、本例では２０ＧＨｚの高周波数で正確に
測定できた。そしてこの測定においてＣｕ配線３は弾性
接触するので、多数の端子でも容易に接触し、また擦る
作用を伴う。従ってＣｕ配線３の接触部は常に確実に安
定して接触する。In the probe needle of the above embodiment, a conductive thin film Cu wiring 3 is formed on a springy substrate 1 via an insulating thin film AlzO3 film 2 by an etching method. The electrical characteristics were measured by contacting the pads 11 of ICs, LSIs, etc. on the semiconductor wafer 10, and in the high frequency range, in this example, accurate measurements were possible at a high frequency of 20 GHz. In this measurement, since the Cu wiring 3 comes into elastic contact, even a large number of terminals can easily come into contact with each other, and there is also a rubbing effect. Therefore, the contact portion of the Cu wiring 3 always makes sure and stable contact.
（発明の効果）
以上の説明で判るように本発明の半導体ウェーハの電気
的特性測定用プローブ針は、半導体つ工−ハ上のＩＣ，
ＬＳＩ等のパッドに高密度端子で弾性接触させることが
できるので、プローブ針の接触部がパッドを僅かではあ
るが擦り、接触部は常に確実に安定してパッドに接触し
、電気的特性を正確に測定できる。(Effects of the Invention) As can be seen from the above explanation, the probe needle for measuring the electrical characteristics of a semiconductor wafer of the present invention can be used to
Since high-density terminals can be brought into elastic contact with the pads of LSIs, etc., the contact part of the probe needle will rub the pad, albeit slightly, and the contact part will always be in stable contact with the pad, ensuring accurate electrical characteristics. can be measured.
第１図は本発明による半導体ウェーへの電気的特性測定
用プローブ針の一実施例を示す斜視図、第２図は半導体
ウェーハの一部分を示す斜視図、第３図は従来の半導体
ウェーハの電気的特性測定用プローブ針を示す斜視図で
ある。
出願人 田中貴金属工業株式会社
第１図FIG. 1 is a perspective view showing an embodiment of a probe needle for measuring electrical characteristics of a semiconductor wafer according to the present invention, FIG. 2 is a perspective view showing a part of a semiconductor wafer, and FIG. FIG. 2 is a perspective view showing a probe needle for measuring physical characteristics. Applicant Tanaka Kikinzoku Kogyo Co., Ltd. Figure 1
Claims (1)
形成され、その上に導電性薄膜より成る配線が多数本形
成されて成る半導体ウェーハの電気的特性測定用プロー
ブ針。A probe needle for measuring electrical characteristics of a semiconductor wafer, which comprises an insulating thin film or dielectric film formed on a springy substrate, and a large number of wirings made of conductive thin films formed thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3625188A JPH01211936A (en) | 1988-02-18 | 1988-02-18 | Probe for measuring electrical characteristic of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3625188A JPH01211936A (en) | 1988-02-18 | 1988-02-18 | Probe for measuring electrical characteristic of semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01211936A true JPH01211936A (en) | 1989-08-25 |
Family
ID=12464553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3625188A Pending JPH01211936A (en) | 1988-02-18 | 1988-02-18 | Probe for measuring electrical characteristic of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01211936A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04363671A (en) * | 1991-06-10 | 1992-12-16 | Nippon Maikuronikusu:Kk | Manufacture of probe board and probe group |
| EP0860702A2 (en) * | 1997-02-20 | 1998-08-26 | Soshotech Co., Ltd. | Structure of contact end in contact probe |
| EP1014097A2 (en) * | 1998-12-16 | 2000-06-28 | Soshotech Co., Ltd. | Probe unit |
| JP2001349903A (en) * | 2000-06-07 | 2001-12-21 | Noozeru Engineering Kk | High frequency probe |
| US6991948B2 (en) | 2003-11-05 | 2006-01-31 | Solid State Measurements, Inc. | Method of electrical characterization of a silicon-on-insulator (SOI) wafer |
| JP2006275880A (en) * | 2005-03-30 | 2006-10-12 | Yamaha Corp | Probe unit and method for manufacturing it |
| US7327155B2 (en) | 2005-11-17 | 2008-02-05 | Solid State Measurements, Inc. | Elastic metal gate MOS transistor for surface mobility measurement in semiconductor materials |
-
1988
- 1988-02-18 JP JP3625188A patent/JPH01211936A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04363671A (en) * | 1991-06-10 | 1992-12-16 | Nippon Maikuronikusu:Kk | Manufacture of probe board and probe group |
| EP0860702A2 (en) * | 1997-02-20 | 1998-08-26 | Soshotech Co., Ltd. | Structure of contact end in contact probe |
| EP0860702A3 (en) * | 1997-02-20 | 1999-01-20 | Soshotech Co., Ltd. | Structure of contact end in contact probe |
| US6111418A (en) * | 1997-02-20 | 2000-08-29 | Soshotech Co., Ltd. | Method for building and a structure of a contact end in a contact probe |
| EP1014097A2 (en) * | 1998-12-16 | 2000-06-28 | Soshotech Co., Ltd. | Probe unit |
| EP1014097A3 (en) * | 1998-12-16 | 2001-04-04 | Soshotech Co., Ltd. | Probe unit |
| JP2001349903A (en) * | 2000-06-07 | 2001-12-21 | Noozeru Engineering Kk | High frequency probe |
| US6991948B2 (en) | 2003-11-05 | 2006-01-31 | Solid State Measurements, Inc. | Method of electrical characterization of a silicon-on-insulator (SOI) wafer |
| JP2006275880A (en) * | 2005-03-30 | 2006-10-12 | Yamaha Corp | Probe unit and method for manufacturing it |
| JP4630100B2 (en) * | 2005-03-30 | 2011-02-09 | 山一電機株式会社 | Probe unit |
| US7327155B2 (en) | 2005-11-17 | 2008-02-05 | Solid State Measurements, Inc. | Elastic metal gate MOS transistor for surface mobility measurement in semiconductor materials |
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