JPS6418234A - Semiconductor evaluation device - Google Patents

Semiconductor evaluation device

Info

Publication number
JPS6418234A
JPS6418234A JP17554987A JP17554987A JPS6418234A JP S6418234 A JPS6418234 A JP S6418234A JP 17554987 A JP17554987 A JP 17554987A JP 17554987 A JP17554987 A JP 17554987A JP S6418234 A JPS6418234 A JP S6418234A
Authority
JP
Japan
Prior art keywords
inspected
semiconductor
intensity
modulated light
nondestructively
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17554987A
Other languages
Japanese (ja)
Other versions
JPH0666368B2 (en
Inventor
Hidekazu Suzuki
Yutaka Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP62175549A priority Critical patent/JPH0666368B2/en
Publication of JPS6418234A publication Critical patent/JPS6418234A/en
Publication of JPH0666368B2 publication Critical patent/JPH0666368B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To measure and evaluate various kinds of fundamental constants regarding a semiconductor in a nondestructive manner by nondestructively measuring the dynamic behavior of a carrier generated inside the semiconductor by being changed with the passage of time due to the intensity-modulated light with which the surface of an object to be inspected is irradiated. CONSTITUTION:Conductive liquids 20, 21 which have been sealed and guided inside appropriate guide means or sealing means 22, 23 come into contact with two parts 30, 31 which are situated at an appropriate separation distance on one surface of an object 10 to be inspected which may be a semiconductor wafer itself 11. The intensity-modulated light 40 guided by means of an optical fiber 50 is incident on a locally microscopic part between the pair of contact parts 30, 31 on the surface of the object 10 to be inspected. The dynamic behavior of a carrier generated by being changed with the passage of time due to the intensity-modulated light with which the surface of the object to be inspected has been irradiated locally or evenly is measured nondestructively. By this setup, the semiconductor can be evaluated nondestructively as it is; kinds of fundamental constants which can be measured can be increased.
JP62175549A 1987-07-14 1987-07-14 Semiconductor evaluation equipment Expired - Lifetime JPH0666368B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62175549A JPH0666368B2 (en) 1987-07-14 1987-07-14 Semiconductor evaluation equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62175549A JPH0666368B2 (en) 1987-07-14 1987-07-14 Semiconductor evaluation equipment

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP9670393A Division JPH0727947B2 (en) 1993-03-31 1993-03-31 Semiconductor evaluation equipment

Publications (2)

Publication Number Publication Date
JPS6418234A true JPS6418234A (en) 1989-01-23
JPH0666368B2 JPH0666368B2 (en) 1994-08-24

Family

ID=15998022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62175549A Expired - Lifetime JPH0666368B2 (en) 1987-07-14 1987-07-14 Semiconductor evaluation equipment

Country Status (1)

Country Link
JP (1) JPH0666368B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006234738A (en) * 2005-02-28 2006-09-07 Dainippon Printing Co Ltd Substrate, device and method for measuring carrier mobility of semiconductor thin film
JP2008051719A (en) * 2006-08-25 2008-03-06 Kobe Steel Ltd Crystallinity measuring instrument of thin-film semiconductor and its crystallinity measuring method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5661462U (en) * 1979-10-17 1981-05-25
JPS59181549A (en) * 1983-03-31 1984-10-16 Mitsubishi Metal Corp Life time measurement of semiconductor wafer
JPS60103636A (en) * 1983-11-10 1985-06-07 Fujitsu Ltd Measurement of resistivity of compound semiconductor substrate
JPS61156237U (en) * 1985-03-19 1986-09-27
JPS6243551A (en) * 1985-08-21 1987-02-25 Hitachi Ltd Apparatus for measuring life of minority carrier of semiconductor
JPS62131531A (en) * 1985-12-04 1987-06-13 Hitachi Ltd Semiconductor inspecting device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5661462U (en) * 1979-10-17 1981-05-25
JPS59181549A (en) * 1983-03-31 1984-10-16 Mitsubishi Metal Corp Life time measurement of semiconductor wafer
JPS60103636A (en) * 1983-11-10 1985-06-07 Fujitsu Ltd Measurement of resistivity of compound semiconductor substrate
JPS61156237U (en) * 1985-03-19 1986-09-27
JPS6243551A (en) * 1985-08-21 1987-02-25 Hitachi Ltd Apparatus for measuring life of minority carrier of semiconductor
JPS62131531A (en) * 1985-12-04 1987-06-13 Hitachi Ltd Semiconductor inspecting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006234738A (en) * 2005-02-28 2006-09-07 Dainippon Printing Co Ltd Substrate, device and method for measuring carrier mobility of semiconductor thin film
JP2008051719A (en) * 2006-08-25 2008-03-06 Kobe Steel Ltd Crystallinity measuring instrument of thin-film semiconductor and its crystallinity measuring method

Also Published As

Publication number Publication date
JPH0666368B2 (en) 1994-08-24

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term