JPS5713745A - Detecting method for ion etching finishing point - Google Patents

Detecting method for ion etching finishing point

Info

Publication number
JPS5713745A
JPS5713745A JP8938080A JP8938080A JPS5713745A JP S5713745 A JPS5713745 A JP S5713745A JP 8938080 A JP8938080 A JP 8938080A JP 8938080 A JP8938080 A JP 8938080A JP S5713745 A JPS5713745 A JP S5713745A
Authority
JP
Japan
Prior art keywords
pattern
ion etching
finishing point
resistance value
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8938080A
Other languages
Japanese (ja)
Inventor
Hideki Fujiwara
Akira Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8938080A priority Critical patent/JPS5713745A/en
Publication of JPS5713745A publication Critical patent/JPS5713745A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain an accurate pattern with good reproducibility by measuring resistance value between two positions on a thin conductive film and detecting the ion etching finishing point in accordance with the variation of the resistance value. CONSTITUTION:When a photoresist pattern 4 is formed on a conductor layer 3 on a wafer 11, a dummy pattern 13 equal to a pattern formed at two positions except the forming part on a chip 12 is formed thereon. A bin 14 having a cover 16 for protecting the etching is stood in contact with the conductor layer in the vicinity of each of both ends of the dummy pattern, and a resistance meter 15 is connected between the bins 14. An ion etching is performed in this state, and the etching finishing point is determined by the prescribed position in which the resistance value is increased and a curve rises. Thus, a microminiature pattern can be formed accurately with good reproducibility without visual observation.
JP8938080A 1980-06-30 1980-06-30 Detecting method for ion etching finishing point Pending JPS5713745A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8938080A JPS5713745A (en) 1980-06-30 1980-06-30 Detecting method for ion etching finishing point

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8938080A JPS5713745A (en) 1980-06-30 1980-06-30 Detecting method for ion etching finishing point

Publications (1)

Publication Number Publication Date
JPS5713745A true JPS5713745A (en) 1982-01-23

Family

ID=13969062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8938080A Pending JPS5713745A (en) 1980-06-30 1980-06-30 Detecting method for ion etching finishing point

Country Status (1)

Country Link
JP (1) JPS5713745A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022323A (en) * 1983-07-18 1985-02-04 Rohm Co Ltd Detection of passivation dry etching termination point
JPS6066475A (en) * 1983-09-21 1985-04-16 Fujitsu Ltd Manufacture of semiconductor device
JPS61263227A (en) * 1985-05-17 1986-11-21 Matsushita Electronics Corp Manufacture of semiconductor device
US4810335A (en) * 1987-01-20 1989-03-07 Siemens Aktiengesellschaft Method for monitoring etching processes
US6127237A (en) * 1998-03-04 2000-10-03 Kabushiki Kaisha Toshiba Etching end point detecting method based on junction current measurement and etching apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5491182A (en) * 1977-12-28 1979-07-19 Fujitsu Ltd Dry etching control

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5491182A (en) * 1977-12-28 1979-07-19 Fujitsu Ltd Dry etching control

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022323A (en) * 1983-07-18 1985-02-04 Rohm Co Ltd Detection of passivation dry etching termination point
JPH0464176B2 (en) * 1983-07-18 1992-10-14 Rohm Kk
JPS6066475A (en) * 1983-09-21 1985-04-16 Fujitsu Ltd Manufacture of semiconductor device
JPS61263227A (en) * 1985-05-17 1986-11-21 Matsushita Electronics Corp Manufacture of semiconductor device
JPH0528492B2 (en) * 1985-05-17 1993-04-26 Matsushita Electronics Corp
US4810335A (en) * 1987-01-20 1989-03-07 Siemens Aktiengesellschaft Method for monitoring etching processes
US6127237A (en) * 1998-03-04 2000-10-03 Kabushiki Kaisha Toshiba Etching end point detecting method based on junction current measurement and etching apparatus

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