JPS5563835A - Defect detector for insulation film - Google Patents

Defect detector for insulation film

Info

Publication number
JPS5563835A
JPS5563835A JP13704878A JP13704878A JPS5563835A JP S5563835 A JPS5563835 A JP S5563835A JP 13704878 A JP13704878 A JP 13704878A JP 13704878 A JP13704878 A JP 13704878A JP S5563835 A JPS5563835 A JP S5563835A
Authority
JP
Japan
Prior art keywords
film
liquid crystal
insulation film
checked
insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13704878A
Other languages
Japanese (ja)
Other versions
JPS5856973B2 (en
Inventor
Sunao Nishioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP13704878A priority Critical patent/JPS5856973B2/en
Publication of JPS5563835A publication Critical patent/JPS5563835A/en
Publication of JPS5856973B2 publication Critical patent/JPS5856973B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Testing Electric Properties And Detecting Electric Faults (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Liquid Crystal (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To detect defects in an insulation film, by use of liquid crystal, by employing a spacer having a conductive film on one side which contacts the insulation film to be checked and sensing the potential difference between the conductive film and a semiconductor substrate under the condition wherein applied voltage is strictly controlled.
CONSTITUTION: A semiconductor 3, on which an insulation film 2 to be tested is formed, is mounted on a metallic test stand 1, and an insulating spacer 6 having a large aperture 4 and provided with a conductive film 5 of Au and the like is mounted thereon in such a manner that the side of the film 5 is in touch with the film 2. After the aperture 4 is charged with liquid crystal, a glass having a transparent electrode 8 is mounted thereon. A d-c powder source 10 is connected to the electrode 8 and the stand 1, and the insulation failure is checked while observing the dynamic scattering of liquid crystal under a microscope. Observation will be performed after the potential difference between the film 5 and the substrate 3 is set to a predetermined value by adjusting the d-c powder source 10 while reading the indication of a voltmeter 11. In such arrangement, the defects can be checked accurately since the value of voltage used for checking can be appropriately defined.
COPYRIGHT: (C)1980,JPO&Japio
JP13704878A 1978-11-06 1978-11-06 Insulating film defect detection device Expired JPS5856973B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13704878A JPS5856973B2 (en) 1978-11-06 1978-11-06 Insulating film defect detection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13704878A JPS5856973B2 (en) 1978-11-06 1978-11-06 Insulating film defect detection device

Publications (2)

Publication Number Publication Date
JPS5563835A true JPS5563835A (en) 1980-05-14
JPS5856973B2 JPS5856973B2 (en) 1983-12-17

Family

ID=15189645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13704878A Expired JPS5856973B2 (en) 1978-11-06 1978-11-06 Insulating film defect detection device

Country Status (1)

Country Link
JP (1) JPS5856973B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007263875A (en) * 2006-03-29 2007-10-11 Ngk Insulators Ltd Plasma generation electrode inspection device
JP2008241383A (en) * 2007-03-27 2008-10-09 Yaskawa Electric Corp Oil film dielectric breakdown evaluation device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6076495U (en) * 1983-10-29 1985-05-28 カルソニックカンセイ株式会社 Display drive circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007263875A (en) * 2006-03-29 2007-10-11 Ngk Insulators Ltd Plasma generation electrode inspection device
JP4699928B2 (en) * 2006-03-29 2011-06-15 日本碍子株式会社 Plasma generation electrode inspection device
JP2008241383A (en) * 2007-03-27 2008-10-09 Yaskawa Electric Corp Oil film dielectric breakdown evaluation device

Also Published As

Publication number Publication date
JPS5856973B2 (en) 1983-12-17

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