JPS5724544A - Detection for insulation film defect of semiconductor element - Google Patents
Detection for insulation film defect of semiconductor elementInfo
- Publication number
- JPS5724544A JPS5724544A JP9868280A JP9868280A JPS5724544A JP S5724544 A JPS5724544 A JP S5724544A JP 9868280 A JP9868280 A JP 9868280A JP 9868280 A JP9868280 A JP 9868280A JP S5724544 A JPS5724544 A JP S5724544A
- Authority
- JP
- Japan
- Prior art keywords
- electrolytic solution
- electrode
- ammeter
- capillary tube
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To detect the defect of the insulation film by measuring the intensity of electric current between the capillary electrode and the circuit after the electrolytic solution from the tip of a capillary tube is contacted with the surface of the semiconductor element. CONSTITUTION:The diameter of the capillary tube and the viscosity, surface tension or gravity of an electrolytic solution 8 are so designed that the drop of solution from the tip of the capillary tube 9 hangs down about 40mum. An electrode 10 is inserted into the electrolytic solution and then electricity is turned on with one end of a battery 12 connected to an ammeter 11 through electrode 10, an the other to a silicone substrate 1 and an aluminium electrode 2. The spread of electrolytic solution should be about 200-300mum in area and the source voltage 5V. In this case, the indication on the ammeter of a perfectly passivated film 4 is zero, and if there are any cracks 5, electricity escapes from it and the indication of the ammeter 11 swings therewith. By this means, a fine defect of the passivated film can be detected in a very short time.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9868280A JPS5724544A (en) | 1980-07-21 | 1980-07-21 | Detection for insulation film defect of semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9868280A JPS5724544A (en) | 1980-07-21 | 1980-07-21 | Detection for insulation film defect of semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5724544A true JPS5724544A (en) | 1982-02-09 |
Family
ID=14226273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9868280A Pending JPS5724544A (en) | 1980-07-21 | 1980-07-21 | Detection for insulation film defect of semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5724544A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5933843A (en) * | 1982-08-20 | 1984-02-23 | Hitachi Ltd | Inspection of insulating film on surface of semiconductor element |
US4510674A (en) * | 1982-10-21 | 1985-04-16 | Sovonics Solar Systems | System for eliminating short circuit current paths in photovoltaic devices |
JP2006098362A (en) * | 2004-09-30 | 2006-04-13 | Kobe Steel Ltd | Fault detection method for insulating film |
JP2012525694A (en) * | 2009-04-30 | 2012-10-22 | ウニベルジテ・デュ・ルクセンブルク | Electrical and optoelectric properties of large area semiconductor devices. |
-
1980
- 1980-07-21 JP JP9868280A patent/JPS5724544A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5933843A (en) * | 1982-08-20 | 1984-02-23 | Hitachi Ltd | Inspection of insulating film on surface of semiconductor element |
US4510674A (en) * | 1982-10-21 | 1985-04-16 | Sovonics Solar Systems | System for eliminating short circuit current paths in photovoltaic devices |
JP2006098362A (en) * | 2004-09-30 | 2006-04-13 | Kobe Steel Ltd | Fault detection method for insulating film |
JP2012525694A (en) * | 2009-04-30 | 2012-10-22 | ウニベルジテ・デュ・ルクセンブルク | Electrical and optoelectric properties of large area semiconductor devices. |
US9245810B2 (en) | 2009-04-30 | 2016-01-26 | Universite Du Luxembourg | Electrical and opto-electrical characterization of large-area semiconductor devices |
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