JPS57102038A - Marking device and marking method of semiconductor wafer - Google Patents
Marking device and marking method of semiconductor waferInfo
- Publication number
- JPS57102038A JPS57102038A JP17849580A JP17849580A JPS57102038A JP S57102038 A JPS57102038 A JP S57102038A JP 17849580 A JP17849580 A JP 17849580A JP 17849580 A JP17849580 A JP 17849580A JP S57102038 A JPS57102038 A JP S57102038A
- Authority
- JP
- Japan
- Prior art keywords
- marking
- wafer
- inspected
- metal wiring
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To reduce scattering quantity of a metal wiring layer when marking of a semiconductor wafer is to be performed by a method wherein laser marking is performed using plural number of laser beams. CONSTITUTION:The wafer 5 to be inspected is fixed on a vacuum suck beas 4 of wafer prober. A probe 7 of probe card is made to come in contact with the wafer when inspection is to be performed. When the element to be inspected is disqualified, the laser beam 8 is irradiated to the surface of the element to be inspected, and the metal wiring on the surface of the element is fused to form an inferiority mark. When plural number of laser beams are used, because distribution of laser intensity can be unified, the inferiority mark can be formed without scattering the metal wiring layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17849580A JPS57102038A (en) | 1980-12-17 | 1980-12-17 | Marking device and marking method of semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17849580A JPS57102038A (en) | 1980-12-17 | 1980-12-17 | Marking device and marking method of semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57102038A true JPS57102038A (en) | 1982-06-24 |
Family
ID=16049445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17849580A Pending JPS57102038A (en) | 1980-12-17 | 1980-12-17 | Marking device and marking method of semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57102038A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6559409B1 (en) * | 1994-12-09 | 2003-05-06 | Sgs-Thomson Microelectronics S.A. | Method for marking integrated circuits with a laser |
-
1980
- 1980-12-17 JP JP17849580A patent/JPS57102038A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6559409B1 (en) * | 1994-12-09 | 2003-05-06 | Sgs-Thomson Microelectronics S.A. | Method for marking integrated circuits with a laser |
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