JPS53129637A - Mask for photoetching - Google Patents

Mask for photoetching

Info

Publication number
JPS53129637A
JPS53129637A JP4468777A JP4468777A JPS53129637A JP S53129637 A JPS53129637 A JP S53129637A JP 4468777 A JP4468777 A JP 4468777A JP 4468777 A JP4468777 A JP 4468777A JP S53129637 A JPS53129637 A JP S53129637A
Authority
JP
Japan
Prior art keywords
photoetching
mask
material layer
conductive material
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4468777A
Other languages
Japanese (ja)
Inventor
Takashi Asaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4468777A priority Critical patent/JPS53129637A/en
Publication of JPS53129637A publication Critical patent/JPS53129637A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To make possible non-destructive inspection and dimension measurement with an electron microscope by providing a continuous conductive material layer over the entire surface of a photoetching mask.
JP4468777A 1977-04-19 1977-04-19 Mask for photoetching Pending JPS53129637A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4468777A JPS53129637A (en) 1977-04-19 1977-04-19 Mask for photoetching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4468777A JPS53129637A (en) 1977-04-19 1977-04-19 Mask for photoetching

Publications (1)

Publication Number Publication Date
JPS53129637A true JPS53129637A (en) 1978-11-11

Family

ID=12698329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4468777A Pending JPS53129637A (en) 1977-04-19 1977-04-19 Mask for photoetching

Country Status (1)

Country Link
JP (1) JPS53129637A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5568627A (en) * 1978-11-16 1980-05-23 Pioneer Electronic Corp Mask for manufucturing integrated circuit and production thereof
JPS5579447A (en) * 1978-12-09 1980-06-14 Dainippon Printing Co Ltd Photomask substrate and photomask
JPS55100552A (en) * 1979-01-29 1980-07-31 Mitsubishi Electric Corp Photo mask
JPS5739490U (en) * 1980-08-18 1982-03-03
JPS5741638A (en) * 1980-08-25 1982-03-08 Fujitsu Ltd Photomask for electron beam
JPH0990602A (en) * 1995-09-25 1997-04-04 Lg Semicon Co Ltd Phase shift mask and preparation thereof
JP2007298805A (en) * 2006-05-01 2007-11-15 Seiko Epson Corp Photomask, method for manufacturing photomask, device for manufacturing photomask, and circuit board

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113577A (en) * 1974-06-19 1976-02-03 Western Electric Co

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113577A (en) * 1974-06-19 1976-02-03 Western Electric Co

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5568627A (en) * 1978-11-16 1980-05-23 Pioneer Electronic Corp Mask for manufucturing integrated circuit and production thereof
JPS5579447A (en) * 1978-12-09 1980-06-14 Dainippon Printing Co Ltd Photomask substrate and photomask
JPS55100552A (en) * 1979-01-29 1980-07-31 Mitsubishi Electric Corp Photo mask
JPS5739490U (en) * 1980-08-18 1982-03-03
JPS6018870Y2 (en) * 1980-08-18 1985-06-07 株式会社東芝 Plug-in unit storage device
JPS5741638A (en) * 1980-08-25 1982-03-08 Fujitsu Ltd Photomask for electron beam
JPS6262336B2 (en) * 1980-08-25 1987-12-25 Fujitsu Ltd
JPH0990602A (en) * 1995-09-25 1997-04-04 Lg Semicon Co Ltd Phase shift mask and preparation thereof
JP2007298805A (en) * 2006-05-01 2007-11-15 Seiko Epson Corp Photomask, method for manufacturing photomask, device for manufacturing photomask, and circuit board

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