JPS5694641A - Semiconductor device for testing reliability - Google Patents

Abstract

PURPOSE:To expedite a test for reliability by arranging two or more electrodes on the insulation film of an n type Si substrate having p-layers parallel to each other in such a manner that they intersect the longitudinal direction of the p-layers and face each other within a part between the p-layers and by sealing them with an insulation film. CONSTITUTION:The parallel p<+> layers 12a and 12b are provided on the n<-> type Si substrate 11, while the parallel Al electrodes 14a and 14b are made on an SiO2 film 13. The electrodes 14a and 14b cross the p<+> layers 12a and 12b at a right angle and face each other in the part between the layers. The Al electrodes 14a and 14b and the substrate 11 are sealed with a resin layer 15. When prescribed negative potential is given to the electrodes 14a and 14b, the electric charge of the sealing resin itself is accumulated in an area between the layers 12a and 12b and thereby the electric charge can be accumulated concentratedly on the surface of the SiO2 film 13. Therefore, even when the volume of the electric charge of the sealing resin itself is small, an inversion layer can be formed on the surface of the substrate between the layers 12a and 12b in a short time, and when the SiO2 film 13 is made thin, a threshold value for forming of the inversion layer can be lowered. By this constitution, an accurate index for control concerning the sealing can be found rapidly.