ATE546831T1 - Vorrichtung zur erzeugung von mikroblasen - Google Patents

Vorrichtung zur erzeugung von mikroblasen

Info

Publication number
ATE546831T1
ATE546831T1 AT09015555T AT09015555T ATE546831T1 AT E546831 T1 ATE546831 T1 AT E546831T1 AT 09015555 T AT09015555 T AT 09015555T AT 09015555 T AT09015555 T AT 09015555T AT E546831 T1 ATE546831 T1 AT E546831T1
Authority
AT
Austria
Prior art keywords
micro
bubble
generating mechanism
bubble generating
widening section
Prior art date
Application number
AT09015555T
Other languages
English (en)
Inventor
Teruo Haibara
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Application granted granted Critical
Publication of ATE546831T1 publication Critical patent/ATE546831T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Accessories For Mixers (AREA)
  • Percussion Or Vibration Massage (AREA)
AT09015555T 2008-12-25 2009-12-16 Vorrichtung zur erzeugung von mikroblasen ATE546831T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008330560A JP5666086B2 (ja) 2008-12-25 2008-12-25 シリコンウェハ洗浄装置

Publications (1)

Publication Number Publication Date
ATE546831T1 true ATE546831T1 (de) 2012-03-15

Family

ID=41673962

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09015555T ATE546831T1 (de) 2008-12-25 2009-12-16 Vorrichtung zur erzeugung von mikroblasen

Country Status (8)

Country Link
US (1) US8408221B2 (de)
EP (1) EP2202782B1 (de)
JP (1) JP5666086B2 (de)
KR (1) KR101136278B1 (de)
CN (1) CN101764048B (de)
AT (1) ATE546831T1 (de)
SG (1) SG162689A1 (de)
TW (1) TWI411476B (de)

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DE102015226300A1 (de) 2015-12-21 2017-07-06 Siltronic Ag Verfahren und Vorrichtung zum Reinigen von Scheiben aus Halbleitermaterial
KR101835986B1 (ko) * 2016-07-25 2018-03-07 시오 컴퍼니 리미티드 유체 공급관
JP6272446B1 (ja) * 2016-11-18 2018-01-31 三菱電機ビルテクノサービス株式会社 ドレンパン洗浄装置およびドレンパン洗浄方法
JP7018610B2 (ja) * 2018-01-15 2022-02-14 株式会社三進製作所 マイクロバブル発生具及びマイクロバブル発生装置
JP7352913B2 (ja) * 2018-03-20 2023-09-29 株式会社島津製作所 ファインバブル供給装置及びファインバブル分析システム
JP7077188B2 (ja) * 2018-09-06 2022-05-30 キオクシア株式会社 基板処理方法、基板処理装置および複合処理装置
KR102089380B1 (ko) * 2018-09-10 2020-03-16 (주)신우에이엔티 웨이퍼 세정용 나노 버블 분사 구조
KR102074221B1 (ko) * 2018-09-10 2020-02-06 (주)신우에이엔티 나노 버블을 이용한 기판 세정 시스템
CN110473773B (zh) * 2019-08-22 2022-03-22 北京北方华创微电子装备有限公司 晶圆清洗方法及晶圆清洗设备
CN113118951A (zh) * 2019-12-31 2021-07-16 清华大学 一种空化射流喷嘴及具有该喷嘴的晶圆处理装置
CN111320255A (zh) * 2020-02-12 2020-06-23 中山市比斯坦环保科技有限公司 一种微米级气泡释放头

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Also Published As

Publication number Publication date
US8408221B2 (en) 2013-04-02
EP2202782A2 (de) 2010-06-30
EP2202782B1 (de) 2012-02-22
EP2202782A3 (de) 2010-10-06
JP5666086B2 (ja) 2015-02-12
KR101136278B1 (ko) 2012-04-20
TWI411476B (zh) 2013-10-11
CN101764048B (zh) 2015-11-25
KR20100075728A (ko) 2010-07-05
JP2010153615A (ja) 2010-07-08
CN101764048A (zh) 2010-06-30
US20100163084A1 (en) 2010-07-01
SG162689A1 (en) 2010-07-29
TW201023987A (en) 2010-07-01

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