ATE524837T1 - Verfahren zur herstellung eines lichtemittierenden bauelements - Google Patents

Verfahren zur herstellung eines lichtemittierenden bauelements

Info

Publication number
ATE524837T1
ATE524837T1 AT04799734T AT04799734T ATE524837T1 AT E524837 T1 ATE524837 T1 AT E524837T1 AT 04799734 T AT04799734 T AT 04799734T AT 04799734 T AT04799734 T AT 04799734T AT E524837 T1 ATE524837 T1 AT E524837T1
Authority
AT
Austria
Prior art keywords
light
layer
transfer layer
minute unevenness
producing
Prior art date
Application number
AT04799734T
Other languages
English (en)
Inventor
Hiroshi Fukshima
Masao Kubo
Akira Inoue
Kenichiro Tanaka
Mikio Masui
Shinji Matsui
Original Assignee
Panasonic Elec Works Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Elec Works Co Ltd filed Critical Panasonic Elec Works Co Ltd
Application granted granted Critical
Publication of ATE524837T1 publication Critical patent/ATE524837T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
  • Electroluminescent Light Sources (AREA)
AT04799734T 2003-11-12 2004-11-11 Verfahren zur herstellung eines lichtemittierenden bauelements ATE524837T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003383064A JP4124102B2 (ja) 2003-11-12 2003-11-12 多重反射防止構造を備えた発光素子とその製造方法
PCT/JP2004/017121 WO2005048361A2 (en) 2003-11-12 2004-11-11 A method for producing a light-emitting device

Publications (1)

Publication Number Publication Date
ATE524837T1 true ATE524837T1 (de) 2011-09-15

Family

ID=34587280

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04799734T ATE524837T1 (de) 2003-11-12 2004-11-11 Verfahren zur herstellung eines lichtemittierenden bauelements

Country Status (7)

Country Link
US (1) US7709282B2 (de)
EP (1) EP1683205B1 (de)
JP (1) JP4124102B2 (de)
CN (1) CN100472824C (de)
AT (1) ATE524837T1 (de)
TW (1) TWI264834B (de)
WO (1) WO2005048361A2 (de)

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KR100703216B1 (ko) * 2006-02-21 2007-04-09 삼성전기주식회사 발광다이오드 패키지의 제조 방법
JP4790481B2 (ja) * 2006-04-26 2011-10-12 株式会社小糸製作所 車両用灯具ユニット
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EP2843716A3 (de) 2006-11-15 2015-04-29 The Regents of The University of California Leuchtdiode mit strukturierter Phosphorumwandlungsschicht
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Also Published As

Publication number Publication date
EP1683205A2 (de) 2006-07-26
TW200529470A (en) 2005-09-01
WO2005048361A3 (en) 2006-01-26
TWI264834B (en) 2006-10-21
JP2005150261A (ja) 2005-06-09
US20070065960A1 (en) 2007-03-22
CN100472824C (zh) 2009-03-25
US7709282B2 (en) 2010-05-04
WO2005048361A2 (en) 2005-05-26
JP4124102B2 (ja) 2008-07-23
CN1871713A (zh) 2006-11-29
EP1683205B1 (de) 2011-09-14

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