JP5833325B2 - 深紫外光源 - Google Patents
深紫外光源 Download PDFInfo
- Publication number
- JP5833325B2 JP5833325B2 JP2011063651A JP2011063651A JP5833325B2 JP 5833325 B2 JP5833325 B2 JP 5833325B2 JP 2011063651 A JP2011063651 A JP 2011063651A JP 2011063651 A JP2011063651 A JP 2011063651A JP 5833325 B2 JP5833325 B2 JP 5833325B2
- Authority
- JP
- Japan
- Prior art keywords
- ultraviolet light
- deep ultraviolet
- electron beam
- aln
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010894 electron beam technology Methods 0.000 claims description 84
- 239000000758 substrate Substances 0.000 claims description 50
- 229910052594 sapphire Inorganic materials 0.000 claims description 39
- 239000010980 sapphire Substances 0.000 claims description 39
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 36
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 27
- 239000011521 glass Substances 0.000 claims description 24
- 229910002804 graphite Inorganic materials 0.000 claims description 23
- 239000010439 graphite Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 23
- 238000000605 extraction Methods 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000004576 sand Substances 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 description 18
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 229910052753 mercury Inorganic materials 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 6
- 230000001788 irregular Effects 0.000 description 6
- 238000004659 sterilization and disinfection Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- 239000002041 carbon nanotube Substances 0.000 description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000001954 sterilising effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000000342 Monte Carlo simulation Methods 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 206010027339 Menstruation irregular Diseases 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000002121 nanofiber Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/30—Treatment of water, waste water, or sewage by irradiation
- C02F1/32—Treatment of water, waste water, or sewage by irradiation with ultraviolet light
- C02F1/325—Irradiation devices or lamp constructions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/64—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/54—Screens on or from which an image or pattern is formed, picked-up, converted, or stored; Luminescent coatings on vessels
- H01J1/62—Luminescent screens; Selection of materials for luminescent coatings on vessels
- H01J1/63—Luminescent screens; Selection of materials for luminescent coatings on vessels characterised by the luminescent material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J63/00—Cathode-ray or electron-stream lamps
- H01J63/02—Details, e.g. electrode, gas filling, shape of vessel
- H01J63/04—Vessels provided with luminescent coatings; Selection of materials for the coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J63/00—Cathode-ray or electron-stream lamps
- H01J63/06—Lamps with luminescent screen excited by the ray or stream
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Water Supply & Treatment (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Hydrology & Water Resources (AREA)
- Physics & Mathematics (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Environmental & Geological Engineering (AREA)
- X-Ray Techniques (AREA)
- Discharge Lamps And Accessories Thereof (AREA)
Description
t1≧a・E3、
但し、Eは電子線のエネルギー(keV)、
aは1(μm/(keV)3)、
である。これにより、サファイア基板は深紫外光以外の有害な漏洩X線を阻止する。また、ワイドギャップ半導体層がAlxGa1-xN井戸層(0.2≦x≦0.8)及びAlN障壁層よりなるAlxGa1-xN/AlN多重量子井戸層を具備するものである。
t1≧a・E3
但し、Eは電子線EBのエネルギー(keV)
aは1μm/(keV)3
である。すなわち、制動幅射によって発生するX線の最も高いエネルギーは電子線EBのエネルギーと同一である。従って、たとえば、E=6keVのときに、サファイア(0001)基板の厚さt1は216μm以上、E=10keVのときに、サファイア(0001)基板の厚さt1は1000μm以上である。このように、サファイア(0001)基板の厚さt1を上述の式に基づいて設定することにより漏洩X線の強度を法定規定値以下とすることができる。
サファイア(0001)基板1について、
屈折率n1=1.84
消衰係数k1=0
AlN層2,3,4について、
屈折率n2=1.87
消衰係数k2=0
アルミニウムメタルバック層6について、
屈折率n6=0.172
消衰係数k6=2.79
RFパワー:100-1000W
圧力:133-13300Pa (1-100Torr)
水素流量:5-500sccm
エッチング時間:1-100分
2:AlNバッファ層
3:グレーティングAlN層
4:AlN層
5:Al0.7Ga0.3N/AlN多重量子井戸層
6:アルミニウムメタルバック層
7:電子放出源
8:ガラス管
9:陽極電極
10:静電レンズ
11、12:直流電源
EB:電子線
DUV:深紫外光
F:光取り出し面
Claims (6)
- サファイア基板と、
該サファイア基板上に設けられ、300nm以下の波長を有するワイドギャップ半導体層と、
電子線を発生するためのグラファイトナノ針状ロッドにより構成され、前記ワイドギャップ半導体層に前記電子線を照射する電子放出源と、
前記電子線を前記ワイドギャップ半導体層上にフォーカスさせるための静電レンズと、
内部が真空であるガラス管と
を具備し、
前記電子放出源及び前記静電レンズは前記ガラス管内に設置され、
前記ワイドギャップ半導体層は、前記ガラス管に溶着された穴あけ陽極電極に密着され、
前記ワイドギャップ半導体層側に設けられた前記電子放出源からの電子線を照射して前記ワイドギャップ半導体層を励起して該励起されたワイドギャップ半導体層から発生した深紫外光を前記サファイア基板より放射するようにし、
前記サファイア基板の厚さt1(μm)が
t1≧a・E3、
但し、Eは前記電子線のエネルギー(keV)、
aは1(μm/(keV)3)、
である深紫外光源。 - 前記ワイドギャップ半導体層がAlxGa1-xN井戸層(0.2≦x≦0.8)及びAlN障壁層よりなるAlxGa1-xN/AlN多重量子井戸層を具備する請求項1に記載の深紫外光源。
- さらに、前記AlxGa1-xN/AlN多重量子井戸層上に設けられ、厚さ30〜60nmのアルミニウムメタルバック層を具備する請求項2に記載の深紫外光源。
- 前記AlxGa1-xN/AlN多重量子井戸層の厚さが300〜400nmであり、
前記電子線のエネルギーが6〜7keVである
請求項2に記載の深紫外光源。 - 前記サファイア基板の光取り出し面は平均周期が750nm以上アスペクト比が1以上である砂面状をなしている請求項1に記載の深紫外光源。
- 前記電子線のエネルギーが4keV以上15keV以下である請求項1に記載の深紫外光源。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011063651A JP5833325B2 (ja) | 2011-03-23 | 2011-03-23 | 深紫外光源 |
US13/428,987 US8487285B2 (en) | 2011-03-23 | 2012-03-23 | Deep-ultraviolet light source capable of stopping leakage of harmful X-rays |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011063651A JP5833325B2 (ja) | 2011-03-23 | 2011-03-23 | 深紫外光源 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012199174A JP2012199174A (ja) | 2012-10-18 |
JP5833325B2 true JP5833325B2 (ja) | 2015-12-16 |
Family
ID=46876545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011063651A Expired - Fee Related JP5833325B2 (ja) | 2011-03-23 | 2011-03-23 | 深紫外光源 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8487285B2 (ja) |
JP (1) | JP5833325B2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5943738B2 (ja) * | 2012-07-02 | 2016-07-05 | スタンレー電気株式会社 | 深紫外レーザ光源 |
CN105103309B (zh) | 2013-04-12 | 2018-09-07 | 首尔伟傲世有限公司 | 紫外发光器件 |
US8964796B2 (en) * | 2013-06-18 | 2015-02-24 | Palo Alto Research Center Incorporated | Structure for electron-beam pumped edge-emitting device and methods for producing same |
ES2808908T3 (es) | 2014-05-08 | 2021-03-02 | L Livermore Nat Security Llc | Obtención de imágenes por retroalimentación de dosis ultra-bajas con fuentes láser Compton de rayos X y rayos gamma |
NZ741924A (en) | 2014-05-08 | 2019-04-26 | L Livermore Nat Security Llc | Methods for 2-color radiography with laser-compton x-ray sources |
JP6475928B2 (ja) * | 2014-07-01 | 2019-02-27 | Dowaホールディングス株式会社 | 電子線励起型発光エピタキシャル基板及びその製造方法、並びに電子線励起型発光装置 |
US9711255B2 (en) | 2015-01-16 | 2017-07-18 | Stanley Electric Co., Ltd | Ultraviolet-emitting material and ultraviolet light source |
JP6567315B2 (ja) * | 2015-04-08 | 2019-08-28 | Dowaホールディングス株式会社 | 紫外線発光装置 |
JP6622009B2 (ja) | 2015-06-11 | 2019-12-18 | 浜松ホトニクス株式会社 | 紫外光発生用ターゲット及びその製造方法 |
CN105846310B (zh) * | 2016-04-20 | 2019-05-14 | 北京大学 | 一种出光增强型电子束泵浦紫外光源及其制备方法 |
CN105932125B (zh) * | 2016-05-17 | 2018-10-26 | 太原理工大学 | 一种GaN基绿光LED外延结构及其制备方法 |
US11964062B2 (en) | 2019-09-03 | 2024-04-23 | Luxhygenix Inc. | Antimicrobial device using ultraviolet light |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0554857A (ja) | 1991-08-23 | 1993-03-05 | Toshiba Lighting & Technol Corp | 紫外線照射装置 |
JPH05217552A (ja) | 1991-08-23 | 1993-08-27 | Toshiba Lighting & Technol Corp | 紫外線照射装置 |
JPH0696609A (ja) | 1991-09-30 | 1994-04-08 | Toshiba Lighting & Technol Corp | 紫外線放射光源および紫外線照射装置 |
JP3731147B2 (ja) * | 1999-08-31 | 2006-01-05 | 独立行政法人科学技術振興機構 | 紫外発光体及びその製造方法 |
JP2003109521A (ja) * | 2001-09-28 | 2003-04-11 | Canon Inc | 表示パネルおよびその封着方法ならびにそれを備える画像表示装置 |
JP4124102B2 (ja) * | 2003-11-12 | 2008-07-23 | 松下電工株式会社 | 多重反射防止構造を備えた発光素子とその製造方法 |
CN100583379C (zh) | 2004-01-15 | 2010-01-20 | 皇家飞利浦电子股份有限公司 | 高压汞蒸气灯 |
JP4393257B2 (ja) * | 2004-04-15 | 2010-01-06 | キヤノン株式会社 | 外囲器の製造方法および画像形成装置 |
JP2006012586A (ja) | 2004-06-25 | 2006-01-12 | Harison Toshiba Lighting Corp | 放電ランプ |
JP2006127924A (ja) * | 2004-10-29 | 2006-05-18 | National Institute For Materials Science | 変調型遠紫外固体発光装置 |
JP4533926B2 (ja) * | 2007-12-26 | 2010-09-01 | 財団法人高知県産業振興センター | 成膜装置及び成膜方法 |
JP5170666B2 (ja) * | 2008-05-30 | 2013-03-27 | 独立行政法人国立高等専門学校機構 | 電界放出用電子源電極の製造方法 |
JP5081851B2 (ja) * | 2009-02-26 | 2012-11-28 | スタンレー電気株式会社 | 電界放出電子源の製造方法 |
JP5665036B2 (ja) * | 2009-03-10 | 2015-02-04 | 浜松ホトニクス株式会社 | 化合物半導体層構造の製造方法 |
CN102484172B (zh) * | 2009-08-31 | 2014-11-05 | 国立大学法人京都大学 | 紫外线照射装置 |
-
2011
- 2011-03-23 JP JP2011063651A patent/JP5833325B2/ja not_active Expired - Fee Related
-
2012
- 2012-03-23 US US13/428,987 patent/US8487285B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2012199174A (ja) | 2012-10-18 |
US20120241651A1 (en) | 2012-09-27 |
US8487285B2 (en) | 2013-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5833325B2 (ja) | 深紫外光源 | |
JP4555899B2 (ja) | 深紫外半導体光デバイス | |
JP5548204B2 (ja) | 紫外線照射装置 | |
JP5943738B2 (ja) | 深紫外レーザ光源 | |
Tawfik et al. | Cathodoluminescence of a 2 inch ultraviolet-light-source tube based on the integration of AlGaN materials and carbon nanotube field emitters | |
US9406488B2 (en) | Enhanced photoelectron sources using electron bombardment | |
JP5700325B2 (ja) | 紫外線発生用ターゲットおよび電子線励起紫外光源 | |
JP2014011377A5 (ja) | ||
JP2005346954A (ja) | 放電灯及び放電電極 | |
JP5665036B2 (ja) | 化合物半導体層構造の製造方法 | |
JP5192097B2 (ja) | 紫外線照射装置 | |
US20040155573A1 (en) | Diamond high brightness ultraviolet ray emitting element | |
US20060012285A1 (en) | Fluorescent lamp with coldcathode of graphite and its manufacture method | |
JP5565793B2 (ja) | 深紫外発光素子及びその製造方法 | |
JP2015046415A (ja) | 窒化物半導体発光素子および電子線励起型光源装置 | |
Muratov et al. | Wide-aperture cathodoluminescent light source based on an open discharge | |
CN112687520B (zh) | 一种空间电子激发的反射式深紫外光源 | |
JP2018037277A (ja) | レーザ駆動ランプ | |
CN101141046A (zh) | 表面等离激元辅助的波长可调的光发射器件 | |
WO2005048294A1 (ja) | フィールドエミッション紫外線ランプ | |
Tawfik et al. | Influence of quantum well thickness on the Cathodoluminescent properties of AlGaN-based UVC light source tube with CNT field emitters | |
JP5346310B2 (ja) | 発光装置 | |
JP2014049591A (ja) | 電子線励起型光源 | |
Okazaki et al. | Synthesis and nano-processing of ZnO nano-crystals for controlled laser action | |
JP2010135260A (ja) | 発光素子および発光素子の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140217 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141029 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141111 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141222 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150526 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150630 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20151013 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20151029 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5833325 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |