TW200717872A - LED wafer with light extracting layer and method for its manufacture - Google Patents
LED wafer with light extracting layer and method for its manufactureInfo
- Publication number
- TW200717872A TW200717872A TW095133896A TW95133896A TW200717872A TW 200717872 A TW200717872 A TW 200717872A TW 095133896 A TW095133896 A TW 095133896A TW 95133896 A TW95133896 A TW 95133896A TW 200717872 A TW200717872 A TW 200717872A
- Authority
- TW
- Taiwan
- Prior art keywords
- sol
- gel
- lithography
- led wafer
- coating
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000011248 coating agent Substances 0.000 abstract 3
- 238000000576 coating method Methods 0.000 abstract 3
- 238000002174 soft lithography Methods 0.000 abstract 3
- 238000004049 embossing Methods 0.000 abstract 2
- 238000000605 extraction Methods 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 2
- 239000012703 sol-gel precursor Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
A method for providing an inorganic LED wafer with an inorganic structured light extraction layer, comprising providing a coating of a sol-gel precursor on said wafer, ensuring that the surface of said sol-gel coating is susceptible to embossing, embossing a structure in the sol-gel coating using soft-lithography, and curing the sol-gel layer, thereby forming said light extraction layer. The invention is based on the understanding that sol-gel precursors, because of their properties before a final curing step, constitute a suitable base material for soft lithography, and that their optical properties make them suitable for use as optical components. Compared to traditional optical lithography the soft lithography requires fewer processing steps and is thus faster and less expensive, both in terms of production cost as well as investment cost.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05108552 | 2005-09-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200717872A true TW200717872A (en) | 2007-05-01 |
Family
ID=37622006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095133896A TW200717872A (en) | 2005-09-16 | 2006-09-13 | LED wafer with light extracting layer and method for its manufacture |
Country Status (2)
Country | Link |
---|---|
TW (1) | TW200717872A (en) |
WO (1) | WO2007031929A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100900288B1 (en) * | 2007-10-29 | 2009-05-29 | 엘지전자 주식회사 | Light emitting device |
DE102010046091A1 (en) | 2010-09-20 | 2012-03-22 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip, method for production and application in an optoelectronic component |
DE102011117381A1 (en) * | 2011-10-28 | 2013-05-02 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip |
WO2017054937A1 (en) * | 2015-09-29 | 2017-04-06 | Philips Lighting Holding B.V. | Light source with diffractive outcoupling |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4225380A (en) * | 1978-09-05 | 1980-09-30 | Wickens Justin H | Method of producing light emitting semiconductor display |
JPS63283174A (en) * | 1987-05-15 | 1988-11-21 | Omron Tateisi Electronics Co | Light emitting diode |
JP3469484B2 (en) * | 1998-12-24 | 2003-11-25 | 株式会社東芝 | Semiconductor light emitting device and method of manufacturing the same |
EP1420462A1 (en) * | 2002-11-13 | 2004-05-19 | Heptagon Oy | Light emitting device |
EP1460738A3 (en) * | 2003-03-21 | 2004-09-29 | Avalon Photonics AG | Wafer-scale replication-technique for opto-mechanical structures on opto-electronic devices |
DE10340271B4 (en) * | 2003-08-29 | 2019-01-17 | Osram Opto Semiconductors Gmbh | Thin-film light-emitting diode chip and method for its production |
JP4093943B2 (en) * | 2003-09-30 | 2008-06-04 | 三洋電機株式会社 | LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF |
JP4124102B2 (en) * | 2003-11-12 | 2008-07-23 | 松下電工株式会社 | Light emitting device having multiple antireflection structure and method of manufacturing |
-
2006
- 2006-09-11 WO PCT/IB2006/053204 patent/WO2007031929A1/en active Application Filing
- 2006-09-13 TW TW095133896A patent/TW200717872A/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2007031929A1 (en) | 2007-03-22 |
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