ATE513250T1 - Prägeform, imprint lithographieverfahren, und verfahren für chipherstellung - Google Patents

Prägeform, imprint lithographieverfahren, und verfahren für chipherstellung

Info

Publication number
ATE513250T1
ATE513250T1 AT06120128T AT06120128T ATE513250T1 AT E513250 T1 ATE513250 T1 AT E513250T1 AT 06120128 T AT06120128 T AT 06120128T AT 06120128 T AT06120128 T AT 06120128T AT E513250 T1 ATE513250 T1 AT E513250T1
Authority
AT
Austria
Prior art keywords
imprint lithography
chip manufacturing
mold
embossing mold
manufacturing process
Prior art date
Application number
AT06120128T
Other languages
German (de)
English (en)
Inventor
Shingo Okushima
Atsunori Terasaki
Hideki Ina
Nobuhito Suehira
Junichi Seki
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE513250T1 publication Critical patent/ATE513250T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
AT06120128T 2005-09-06 2006-09-05 Prägeform, imprint lithographieverfahren, und verfahren für chipherstellung ATE513250T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005258034 2005-09-06
JP2006194905A JP4330168B2 (ja) 2005-09-06 2006-07-14 モールド、インプリント方法、及びチップの製造方法

Publications (1)

Publication Number Publication Date
ATE513250T1 true ATE513250T1 (de) 2011-07-15

Family

ID=37076119

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06120128T ATE513250T1 (de) 2005-09-06 2006-09-05 Prägeform, imprint lithographieverfahren, und verfahren für chipherstellung

Country Status (5)

Country Link
US (5) US7510388B2 (https=)
EP (1) EP1760526B1 (https=)
JP (1) JP4330168B2 (https=)
KR (1) KR100840799B1 (https=)
AT (1) ATE513250T1 (https=)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4330168B2 (ja) 2005-09-06 2009-09-16 キヤノン株式会社 モールド、インプリント方法、及びチップの製造方法
JP4262267B2 (ja) * 2005-09-06 2009-05-13 キヤノン株式会社 モールド、インプリント装置及びデバイスの製造方法
US7690910B2 (en) 2006-02-01 2010-04-06 Canon Kabushiki Kaisha Mold for imprint, process for producing minute structure using the mold, and process for producing the mold
KR100871812B1 (ko) * 2006-03-29 2008-12-05 주식회사 에스앤에스텍 나노 임프린트 마스크 및 그 제조방법
US8012395B2 (en) 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
JP4926881B2 (ja) * 2006-09-22 2012-05-09 キヤノン株式会社 インプリント装置およびアライメント方法
US7776628B2 (en) * 2006-11-16 2010-08-17 International Business Machines Corporation Method and system for tone inverting of residual layer tolerant imprint lithography
KR100790899B1 (ko) * 2006-12-01 2008-01-03 삼성전자주식회사 얼라인 마크가 형성된 템플릿 및 그 제조 방법
JP5188192B2 (ja) * 2007-02-20 2013-04-24 キヤノン株式会社 モールド、モールドの製造方法、インプリント装置及びインプリント方法、インプリント方法を用いた構造体の製造方法
KR100843552B1 (ko) * 2007-07-19 2008-07-04 한국전자통신연구원 나노 임프린트 공정을 이용한 나노 전극선 제조 방법
JP5032239B2 (ja) * 2007-08-24 2012-09-26 財団法人神奈川科学技術アカデミー インプリント用モールドおよびその製造方法
JP5332161B2 (ja) * 2007-09-19 2013-11-06 凸版印刷株式会社 インプリントモールド、インプリントモールド製造方法
KR100925223B1 (ko) * 2008-01-04 2009-11-06 재단법인서울대학교산학협력재단 Ｕｖ 나노임프린트 리소그라피용 몰드 및 ｕｖ나노임프린트 리소그라피용 몰드 제조를 위한 적층구조물
KR20100033704A (ko) * 2008-09-22 2010-03-31 엘지전자 주식회사 미세패턴을 구비하는 스탬퍼
US20100092599A1 (en) * 2008-10-10 2010-04-15 Molecular Imprints, Inc. Complementary Alignment Marks for Imprint Lithography
US20100104852A1 (en) * 2008-10-23 2010-04-29 Molecular Imprints, Inc. Fabrication of High-Throughput Nano-Imprint Lithography Templates
KR101541814B1 (ko) * 2008-12-09 2015-08-05 삼성전자 주식회사 나노 임프린트 리소그래피 방법
KR20100103211A (ko) * 2009-03-13 2010-09-27 삼성전자주식회사 코팅층을 포함하는 나노 임프린트 리소그래피용 템플리트
JP5448696B2 (ja) * 2009-03-25 2014-03-19 富士フイルム株式会社 光インプリント用硬化性組成物およびそれを用いた硬化物の製造方法
JP5404140B2 (ja) * 2009-04-01 2014-01-29 株式会社東芝 テンプレート及び半導体装置の製造方法
NL2004932A (en) 2009-07-27 2011-01-31 Asml Netherlands Bv Imprint lithography template.
JP2011066074A (ja) * 2009-09-15 2011-03-31 Fujifilm Corp インプリント用硬化性組成物
JP4881413B2 (ja) 2009-09-16 2012-02-22 株式会社東芝 識別マーク付きテンプレート及びその製造方法
NL2005259A (en) * 2009-09-29 2011-03-30 Asml Netherlands Bv Imprint lithography.
NL2005266A (en) * 2009-10-28 2011-05-02 Asml Netherlands Bv Imprint lithography.
FR2955522B1 (fr) * 2010-01-28 2012-02-24 Commissariat Energie Atomique Moule pour la lithographie par nano-impression assistee uv et procedes de realisation d'un tel moule
JP5769734B2 (ja) * 2010-02-05 2015-08-26 モレキュラー・インプリンツ・インコーポレーテッド 高コントラスト位置合わせマークを有するテンプレート
JP5451450B2 (ja) * 2010-02-24 2014-03-26 キヤノン株式会社 インプリント装置及びそのテンプレート並びに物品の製造方法
JP5581871B2 (ja) * 2010-07-22 2014-09-03 大日本印刷株式会社 インプリント方法およびインプリント装置
JP5350345B2 (ja) 2010-09-22 2013-11-27 株式会社神戸製鋼所 薄膜半導体の結晶性評価装置および方法
KR101861644B1 (ko) 2010-09-24 2018-05-28 캐논 나노테크놀로지즈 인코퍼레이티드 다단계 임프린팅을 통한 고콘트라스트 정렬 마크
US8771529B1 (en) * 2010-09-30 2014-07-08 Seagate Technology Llc Method for imprint lithography
WO2012149029A2 (en) * 2011-04-25 2012-11-01 Molecular Imprints, Inc. Optically absorptive material for alignment marks
JP5743718B2 (ja) * 2011-05-31 2015-07-01 キヤノン株式会社 成形型の製造方法及び光学素子
JP5831012B2 (ja) * 2011-07-27 2015-12-09 大日本印刷株式会社 インプリント用位置合わせマーク、該マークを備えたテンプレートおよびその製造方法
JP5651573B2 (ja) 2011-11-18 2015-01-14 株式会社東芝 テンプレート処理方法
KR20140076357A (ko) * 2012-12-12 2014-06-20 삼성전자주식회사 고대비 정렬 마크를 가진 나노임프린트 스탬프 및 그 제조방법
JP2014120584A (ja) * 2012-12-14 2014-06-30 Toshiba Corp インプリント用マスクの洗浄方法
GB2514139A (en) 2013-05-14 2014-11-19 Aghababaie Lin & Co Ltd Apparatus for fabrication of three dimensional objects
JP2015015424A (ja) * 2013-07-08 2015-01-22 株式会社東芝 位置合わせマーク、フォトマスク、および位置合わせマークの形成方法
JP6278383B2 (ja) * 2013-10-24 2018-02-14 国立研究開発法人産業技術総合研究所 高コントラスト位置合わせマークを備えたモールドの製造方法
JP2015146412A (ja) * 2014-02-04 2015-08-13 株式会社東芝 インプリント用テンプレート及びその製造方法
JP6417728B2 (ja) * 2014-06-09 2018-11-07 大日本印刷株式会社 テンプレートの製造方法
JP6394112B2 (ja) * 2014-06-26 2018-09-26 大日本印刷株式会社 テンプレートの製造方法およびテンプレート
JP5754535B2 (ja) * 2014-07-08 2015-07-29 大日本印刷株式会社 インプリント方法およびインプリント装置
JP6446943B2 (ja) * 2014-09-24 2019-01-09 大日本印刷株式会社 インプリント用テンプレート及びインプリント方法
US10869592B2 (en) 2015-02-23 2020-12-22 Uroviu Corp. Handheld surgical endoscope
WO2017038213A1 (ja) * 2015-08-31 2017-03-09 Hoya株式会社 マスクブランク、位相シフトマスクおよびその製造方法、並びに半導体デバイスの製造方法
CN108174615B (zh) 2015-09-29 2023-02-17 大日本印刷株式会社 布线构造体制造方法、图案构造体形成方法及压印用模具
JP2016028442A (ja) * 2015-10-08 2016-02-25 大日本印刷株式会社 テンプレート
CN108351605B (zh) 2016-01-27 2020-12-15 株式会社Lg化学 膜掩模、其制备方法、使用膜掩模的图案形成方法和由膜掩模形成的图案
CN108351604B (zh) * 2016-01-27 2020-10-30 株式会社Lg化学 膜掩模、其制备方法、使用膜掩模的图案形成方法和由膜掩模形成的图案
KR102535820B1 (ko) * 2016-05-19 2023-05-24 삼성디스플레이 주식회사 임프린트 리소그래피 방법, 임프린트용 마스터 템플릿, 이를 이용하여 제조된 와이어 그리드 편광소자 및 이를 포함하는 표시 기판
KR102336560B1 (ko) 2016-05-25 2021-12-08 다이니폰 인사츠 가부시키가이샤 템플릿 및 템플릿 블랭크, 그리고 임프린트용 템플릿 기판의 제조 방법, 임프린트용 템플릿의 제조 방법 및 템플릿
JP2018022850A (ja) * 2016-08-05 2018-02-08 大日本印刷株式会社 インプリント用モールド、及び、該モールドを用いたパターン形成方法
CN110234265B (zh) * 2017-01-23 2022-05-27 易诺威公司 手持式外科内窥镜
KR102288980B1 (ko) * 2017-03-08 2021-08-12 에스케이하이닉스 주식회사 얼라인먼트 마크를 가지는 임프린트 템플레이트 및 임프린트 방법
US12268358B2 (en) 2019-12-05 2025-04-08 Uroviu Corp. Portable endoscope with side-mountable disposable portion
US12228582B2 (en) 2018-06-21 2025-02-18 Shimadzu Corporation Method and apparatus for testing near infrared-photoimmunotherapy treatment
JP6642689B2 (ja) * 2018-12-04 2020-02-12 大日本印刷株式会社 インプリント用テンプレート及びインプリント方法
EP4003138A4 (en) 2019-07-25 2023-08-30 Uroviu Corp. DISPOSABLE ENDOSCOPY NEEDLE WITH INTEGRATED GRIPPER
JP6835167B2 (ja) * 2019-08-28 2021-02-24 大日本印刷株式会社 テンプレートの製造方法
JP7746204B2 (ja) * 2022-03-22 2025-09-30 キオクシア株式会社 テンプレート、テンプレートの製造方法、および半導体装置の製造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5281372A (en) 1991-03-26 1994-01-25 Canon Kabushiki Kaisha Process for producing resin moldings having a concave-convex pattern on the surface
US5266511A (en) * 1991-10-02 1993-11-30 Fujitsu Limited Process for manufacturing three dimensional IC's
US5838653A (en) * 1995-10-04 1998-11-17 Reveo, Inc. Multiple layer optical recording media and method and system for recording and reproducing information using the same
US5772905A (en) 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
US6334960B1 (en) 1999-03-11 2002-01-01 Board Of Regents, The University Of Texas System Step and flash imprint lithography
JP2000323461A (ja) 1999-05-11 2000-11-24 Nec Corp 微細パターン形成装置、その製造方法、および形成方法
SE515962C2 (sv) 2000-03-15 2001-11-05 Obducat Ab Anordning för överföring av mönster till objekt
EP1303792B1 (en) 2000-07-16 2012-10-03 Board Of Regents, The University Of Texas System High-resolution overlay alignement methods and systems for imprint lithography
KR101031528B1 (ko) 2000-10-12 2011-04-27 더 보드 오브 리전츠 오브 더 유니버시티 오브 텍사스 시스템 실온 저압 마이크로- 및 나노- 임프린트 리소그래피용템플릿
US6993169B2 (en) 2001-01-11 2006-01-31 Trestle Corporation System and method for finding regions of interest for microscopic digital montage imaging
US20050064344A1 (en) 2003-09-18 2005-03-24 University Of Texas System Board Of Regents Imprint lithography templates having alignment marks
JP3907504B2 (ja) 2002-03-14 2007-04-18 三菱電機株式会社 半導体装置の製造方法および半導体装置製造用モールド
US7037639B2 (en) 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US6900881B2 (en) 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US7070405B2 (en) * 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US6916511B2 (en) 2002-10-24 2005-07-12 Hewlett-Packard Development Company, L.P. Method of hardening a nano-imprinting stamp
JP4036820B2 (ja) 2002-12-18 2008-01-23 インターナショナル・ビジネス・マシーンズ・コーポレーション サブ波長構造体の製造
FR2849532B1 (fr) 2002-12-26 2005-08-19 Electricite De France Procede de fabrication d'un compose i-iii-vi2 en couches minces, favorisant l'incorporation d'elements iii
US7136150B2 (en) 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
EP1526411A1 (en) 2003-10-24 2005-04-27 Obducat AB Apparatus and method for aligning surface
JP4029885B2 (ja) * 2005-03-29 2008-01-09 セイコーエプソン株式会社 半導体装置の製造方法
JP4330168B2 (ja) * 2005-09-06 2009-09-16 キヤノン株式会社 モールド、インプリント方法、及びチップの製造方法
JP4262267B2 (ja) * 2005-09-06 2009-05-13 キヤノン株式会社 モールド、インプリント装置及びデバイスの製造方法

Also Published As

Publication number Publication date
US8668484B2 (en) 2014-03-11
US20090152753A1 (en) 2009-06-18
US20140120199A1 (en) 2014-05-01
KR20070027466A (ko) 2007-03-09
US7981304B2 (en) 2011-07-19
US7510388B2 (en) 2009-03-31
EP1760526B1 (en) 2011-06-15
US8562846B2 (en) 2013-10-22
US20110278259A1 (en) 2011-11-17
JP4330168B2 (ja) 2009-09-16
KR100840799B1 (ko) 2008-06-23
US20070187875A1 (en) 2007-08-16
EP1760526A1 (en) 2007-03-07
US20090152239A1 (en) 2009-06-18
JP2007103915A (ja) 2007-04-19

Similar Documents

Publication Publication Date Title
ATE513250T1 (de) Prägeform, imprint lithographieverfahren, und verfahren für chipherstellung
ATE551631T1 (de) Prägeverfahren zur strukturherstellung
WO2009038134A1 (ja) 樹脂複合型光学素子及びその製造方法
JP5100850B2 (ja) 外装部品およびその製造方法ならびに電子機器
EP1873174A4 (en) PHOTOHÄRTBARE COMPOSITION, OBJECT WITH A FINE PATTERN AND MANUFACTURING PROCESS THEREFOR
ATE554050T1 (de) Prägeverfahren und verfahren zur verarbeitung eines substrats
ATE433134T1 (de) Imprint-lithographieverfahren, gerät hierfür, sowie verfahren zur herstellung eines halbleiterchips
ATE553157T1 (de) Harzzusammensetzung für optisches material, harzfilm für optisches material und lichtwellenleiter damit
WO2009041472A1 (ja) 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置
ATE408850T1 (de) Mikrolinse zur projektionslithographie und ihr herstellungsverfahren
FI3401711T3 (fi) Diffraktiivinen optinen elementti sekä valoa säteilevä laite
KR20150112945A (ko) 광투과형 임프린트용 몰드, 대면적 몰드의 제조방법
CN101446759A (zh) 纳米压印用二次压印模板的制作方法及其二次压印模板
JP2013214627A (ja) ナノインプリント用マスターテンプレート及びレプリカテンプレートの製造方法
ATE538448T1 (de) Produktmarkierung
TW200632591A (en) Exposure method, manufacturing method of electronic device, exposure device, and illuminating optical device
BRPI0619528A8 (pt) Processo de transferência de um motivo micrônico sobre um artigo óptico e artigo óptico assim obtido
BRPI0600041A (pt) processo de fabricação de um dispositivo antivibratório e dispositivo antivibratório podendo ser obtido por este processo
JP6281592B2 (ja) レプリカテンプレートの製造方法
CN207148350U (zh) 衍射光学元件结构
Fuchs et al. Lithography potentials of UV-nanoimprint
WO2008025919A3 (fr) Procédé de marquage d'une plaque semi-conductrice pour son identification et plaque semi-conductrice marquée par ce procédé
ATE502384T1 (de) Optisches speichermedium mit maskenschicht für hochauflösenden nahfeldeffekt und entsprechendes herstellungsverfahren
TW200801806A (en) Method of fabricating a mold
CN101850625B (zh) 制造光学元件的方法

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties