KR100840799B1 - 몰드, 임프린트 방법 및 칩의 제조방법 - Google Patents

몰드, 임프린트 방법 및 칩의 제조방법 Download PDF

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Publication number
KR100840799B1
KR100840799B1 KR1020060085406A KR20060085406A KR100840799B1 KR 100840799 B1 KR100840799 B1 KR 100840799B1 KR 1020060085406 A KR1020060085406 A KR 1020060085406A KR 20060085406 A KR20060085406 A KR 20060085406A KR 100840799 B1 KR100840799 B1 KR 100840799B1
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South Korea
Prior art keywords
mold
alignment mark
substrate
layer
region
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Expired - Fee Related
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KR1020060085406A
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English (en)
Korean (ko)
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KR20070027466A (ko
Inventor
아츠노리 테라사키
준이치 세키
노부히토 스에히라
히데키 이나
신고 오쿠시마
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캐논 가부시끼가이샤
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
KR1020060085406A 2005-09-06 2006-09-06 몰드, 임프린트 방법 및 칩의 제조방법 Expired - Fee Related KR100840799B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00258034 2005-09-06
JP2005258034 2005-09-06
JPJP-P-2006-00194905 2006-07-14
JP2006194905A JP4330168B2 (ja) 2005-09-06 2006-07-14 モールド、インプリント方法、及びチップの製造方法

Publications (2)

Publication Number Publication Date
KR20070027466A KR20070027466A (ko) 2007-03-09
KR100840799B1 true KR100840799B1 (ko) 2008-06-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060085406A Expired - Fee Related KR100840799B1 (ko) 2005-09-06 2006-09-06 몰드, 임프린트 방법 및 칩의 제조방법

Country Status (5)

Country Link
US (5) US7510388B2 (https=)
EP (1) EP1760526B1 (https=)
JP (1) JP4330168B2 (https=)
KR (1) KR100840799B1 (https=)
AT (1) ATE513250T1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101118409B1 (ko) 2009-09-16 2012-05-30 가부시끼가이샤 도시바 식별 마크를 갖는 템플릿 및 그 제조 방법

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US7690910B2 (en) 2006-02-01 2010-04-06 Canon Kabushiki Kaisha Mold for imprint, process for producing minute structure using the mold, and process for producing the mold
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US8012395B2 (en) 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
JP4926881B2 (ja) * 2006-09-22 2012-05-09 キヤノン株式会社 インプリント装置およびアライメント方法
US7776628B2 (en) * 2006-11-16 2010-08-17 International Business Machines Corporation Method and system for tone inverting of residual layer tolerant imprint lithography
KR100790899B1 (ko) * 2006-12-01 2008-01-03 삼성전자주식회사 얼라인 마크가 형성된 템플릿 및 그 제조 방법
JP5188192B2 (ja) * 2007-02-20 2013-04-24 キヤノン株式会社 モールド、モールドの製造方法、インプリント装置及びインプリント方法、インプリント方法を用いた構造体の製造方法
KR100843552B1 (ko) * 2007-07-19 2008-07-04 한국전자통신연구원 나노 임프린트 공정을 이용한 나노 전극선 제조 방법
JP5032239B2 (ja) * 2007-08-24 2012-09-26 財団法人神奈川科学技術アカデミー インプリント用モールドおよびその製造方法
JP5332161B2 (ja) * 2007-09-19 2013-11-06 凸版印刷株式会社 インプリントモールド、インプリントモールド製造方法
KR100925223B1 (ko) * 2008-01-04 2009-11-06 재단법인서울대학교산학협력재단 Ｕｖ 나노임프린트 리소그라피용 몰드 및 ｕｖ나노임프린트 리소그라피용 몰드 제조를 위한 적층구조물
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JP5754535B2 (ja) * 2014-07-08 2015-07-29 大日本印刷株式会社 インプリント方法およびインプリント装置
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KR102336560B1 (ko) 2016-05-25 2021-12-08 다이니폰 인사츠 가부시키가이샤 템플릿 및 템플릿 블랭크, 그리고 임프린트용 템플릿 기판의 제조 방법, 임프린트용 템플릿의 제조 방법 및 템플릿
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JP4262267B2 (ja) * 2005-09-06 2009-05-13 キヤノン株式会社 モールド、インプリント装置及びデバイスの製造方法

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US7981304B2 (en) 2011-07-19
US7510388B2 (en) 2009-03-31
EP1760526B1 (en) 2011-06-15
US8562846B2 (en) 2013-10-22
US20110278259A1 (en) 2011-11-17
ATE513250T1 (de) 2011-07-15
JP4330168B2 (ja) 2009-09-16
US20070187875A1 (en) 2007-08-16
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US20090152239A1 (en) 2009-06-18
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