ATE484831T1 - Verfahren und system zum verbergen des auffrischens in einem dynamischen direktzugriffsspeicher - Google Patents

Verfahren und system zum verbergen des auffrischens in einem dynamischen direktzugriffsspeicher

Info

Publication number
ATE484831T1
ATE484831T1 AT01962382T AT01962382T ATE484831T1 AT E484831 T1 ATE484831 T1 AT E484831T1 AT 01962382 T AT01962382 T AT 01962382T AT 01962382 T AT01962382 T AT 01962382T AT E484831 T1 ATE484831 T1 AT E484831T1
Authority
AT
Austria
Prior art keywords
arrays
refreshed
array
data
random access
Prior art date
Application number
AT01962382T
Other languages
English (en)
Inventor
Brent Keeth
Brian Shirley
Kevin Ryan
Charles Dennison
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE484831T1 publication Critical patent/ATE484831T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40618—Refresh operations over multiple banks or interleaving
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1042—Read-write modes for single port memories, i.e. having either a random port or a serial port using interleaving techniques, i.e. read-write of one part of the memory while preparing another part

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Closed-Circuit Television Systems (AREA)
AT01962382T 2000-08-17 2001-08-14 Verfahren und system zum verbergen des auffrischens in einem dynamischen direktzugriffsspeicher ATE484831T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/641,881 US6445636B1 (en) 2000-08-17 2000-08-17 Method and system for hiding refreshes in a dynamic random access memory
PCT/US2001/041725 WO2002015194A1 (en) 2000-08-17 2001-08-14 Method and system for hiding refreshes in a dynamic random access memory

Publications (1)

Publication Number Publication Date
ATE484831T1 true ATE484831T1 (de) 2010-10-15

Family

ID=24574243

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01962382T ATE484831T1 (de) 2000-08-17 2001-08-14 Verfahren und system zum verbergen des auffrischens in einem dynamischen direktzugriffsspeicher

Country Status (9)

Country Link
US (1) US6445636B1 (de)
EP (2) EP1328942B1 (de)
JP (1) JP2004507856A (de)
KR (1) KR100796179B1 (de)
CN (1) CN100570739C (de)
AT (1) ATE484831T1 (de)
AU (1) AU2001283568A1 (de)
DE (1) DE60143268D1 (de)
WO (1) WO2002015194A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6862654B1 (en) * 2000-08-17 2005-03-01 Micron Technology, Inc. Method and system for using dynamic random access memory as cache memory
US6697909B1 (en) * 2000-09-12 2004-02-24 International Business Machines Corporation Method and apparatus for performing data access and refresh operations in different sub-arrays of a DRAM cache memory
US6779076B1 (en) * 2000-10-05 2004-08-17 Micron Technology, Inc. Method and system for using dynamic random access memory as cache memory
TW523759B (en) * 2001-08-03 2003-03-11 Umax Data Systems Inc Circuit architecture with extended general purpose input/output pin
US7149824B2 (en) * 2002-07-10 2006-12-12 Micron Technology, Inc. Dynamically setting burst length of memory device by applying signal to at least one external pin during a read or write transaction
US7224631B2 (en) * 2004-08-31 2007-05-29 Micron Technology, Inc. Non-skipping auto-refresh in a DRAM
US20060190678A1 (en) * 2005-02-22 2006-08-24 Butler Douglas B Static random access memory (SRAM) compatible, high availability memory array and method employing synchronous dynamic random access memory (DRAM) in conjunction with a single DRAM cache and tag
US7506100B2 (en) * 2005-02-23 2009-03-17 United Memories, Inc. Static random access memory (SRAM) compatible, high availability memory array and method employing synchronous dynamic random access memory (DRAM) in conjunction with a data cache and separate read and write registers and tag blocks
US7123521B1 (en) 2005-04-27 2006-10-17 Micron Technology, Inc. Random cache read
US7313047B2 (en) * 2006-02-23 2007-12-25 Hynix Semiconductor Inc. Dynamic semiconductor memory with improved refresh mechanism
US7408813B2 (en) * 2006-08-03 2008-08-05 Micron Technology, Inc. Block erase for volatile memory
JP4781229B2 (ja) * 2006-11-01 2011-09-28 キヤノン株式会社 歪曲収差補正装置、撮像装置、及び歪曲収差補正装置の制御方法
US8349531B2 (en) * 2007-11-29 2013-01-08 Dow Global Technologies Llc Compounds and methods of forming compounds useful as a toner
KR100940868B1 (ko) 2009-05-25 2010-02-09 이성재 디램으로 에스램 출력특성을 구현하는 장치 및 방법
CN102081964B (zh) * 2009-11-30 2014-12-10 国际商业机器公司 动态随机访问存储器刷新的方法和系统
TWI539453B (zh) 2010-09-14 2016-06-21 半導體能源研究所股份有限公司 記憶體裝置和半導體裝置
KR20130042236A (ko) * 2011-10-18 2013-04-26 에스케이하이닉스 주식회사 메모리 시스템
KR101970712B1 (ko) * 2012-08-23 2019-04-22 삼성전자주식회사 단말기의 데이터 이동장치 및 방법
CN103700393B (zh) 2012-09-28 2016-08-03 国际商业机器公司 用于dram的中间电路和方法
WO2015143762A1 (en) 2014-03-27 2015-10-01 Techtronic Power Tools Technology Limited Powered fastener driver and operating method thereof
US9824737B2 (en) 2015-12-22 2017-11-21 Intel Corporation Memory circuit and method for operating a first and a second set of memory cells in direct memory access mode with refresh
US10346093B1 (en) * 2018-03-16 2019-07-09 Xilinx, Inc. Memory arrangement for tensor data

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586232B2 (ja) * 1977-09-21 1983-02-03 株式会社日立製作所 メモリ装置
JPS5715286A (en) * 1980-06-30 1982-01-26 Toshiba Corp Memory device
JPS6257194A (ja) * 1985-09-05 1987-03-12 Mitsubishi Electric Corp 二重化メモリ装置
JPS63183694A (ja) * 1987-01-23 1988-07-29 Mitsubishi Electric Corp 半導体記憶装置
EP0420339A3 (en) * 1989-09-29 1992-06-03 N.V. Philips' Gloeilampenfabrieken Multi-plane random access memory system
EP0492776B1 (de) * 1990-12-25 1998-05-13 Mitsubishi Denki Kabushiki Kaisha Halbleiterspeichervorrichtung mit einem grossen Speicher und einem Hochgeschwindigkeitsspeicher
JP3304531B2 (ja) * 1993-08-24 2002-07-22 富士通株式会社 半導体記憶装置
US5442588A (en) * 1994-08-16 1995-08-15 Cirrus Logic, Inc. Circuits and methods for refreshing a dual bank memory
US5835436A (en) * 1995-07-03 1998-11-10 Mitsubishi Denki Kabushiki Kaisha Dynamic type semiconductor memory device capable of transferring data between array blocks at high speed
US5687132A (en) * 1995-10-26 1997-11-11 Cirrus Logic, Inc. Multiple-bank memory architecture and systems and methods using the same
JPH1011348A (ja) * 1996-06-24 1998-01-16 Ricoh Co Ltd Ｄｒａｍの制御装置およびそのｄｒａｍ
US5835401A (en) * 1996-12-05 1998-11-10 Cypress Semiconductor Corporation Dram with hidden refresh
US5818777A (en) * 1997-03-07 1998-10-06 Micron Technology, Inc. Circuit for implementing and method for initiating a self-refresh mode
US5999481A (en) * 1997-08-22 1999-12-07 Micron Technology, Inc. Method and apparatus for controlling the operation of an integrated circuit responsive to out-of-synchronism control signals
JP3490887B2 (ja) * 1998-03-05 2004-01-26 シャープ株式会社 同期型半導体記憶装置
US5999474A (en) * 1998-10-01 1999-12-07 Monolithic System Tech Inc Method and apparatus for complete hiding of the refresh of a semiconductor memory
US6282606B1 (en) * 1999-04-02 2001-08-28 Silicon Aquarius, Inc. Dynamic random access memories with hidden refresh and utilizing one-transistor, one-capacitor cells, systems and methods
US6185136B1 (en) * 1999-07-15 2001-02-06 Micron Technology, Inc. Method and apparatus for repairing defective columns of memory cells
JP4555416B2 (ja) * 1999-09-22 2010-09-29 富士通セミコンダクター株式会社 半導体集積回路およびその制御方法
JP3871853B2 (ja) * 2000-05-26 2007-01-24 株式会社ルネサステクノロジ 半導体装置及びその動作方法

Also Published As

Publication number Publication date
EP1328942A4 (de) 2008-01-02
EP1328942B1 (de) 2010-10-13
JP2004507856A (ja) 2004-03-11
EP2267722A1 (de) 2010-12-29
KR100796179B1 (ko) 2008-01-21
WO2002015194A1 (en) 2002-02-21
US6445636B1 (en) 2002-09-03
EP2267722A8 (de) 2011-05-18
DE60143268D1 (de) 2010-11-25
CN100570739C (zh) 2009-12-16
KR20030088020A (ko) 2003-11-15
EP1328942A1 (de) 2003-07-23
AU2001283568A1 (en) 2002-02-25
CN1471710A (zh) 2004-01-28

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