ATE362178T1 - Nichtflüchtiger ferroelektrischer dünnfilm- baustein mit einem organischen ambipolaren halbleiter und verfahren zum verarbeiten eines solchen bausteins - Google Patents
Nichtflüchtiger ferroelektrischer dünnfilm- baustein mit einem organischen ambipolaren halbleiter und verfahren zum verarbeiten eines solchen bausteinsInfo
- Publication number
- ATE362178T1 ATE362178T1 AT04801422T AT04801422T ATE362178T1 AT E362178 T1 ATE362178 T1 AT E362178T1 AT 04801422 T AT04801422 T AT 04801422T AT 04801422 T AT04801422 T AT 04801422T AT E362178 T1 ATE362178 T1 AT E362178T1
- Authority
- AT
- Austria
- Prior art keywords
- component
- processing
- thin film
- ferroelectric thin
- volatile ferroelectric
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title 1
- 229920000642 polymer Polymers 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 1
- 238000010129 solution processing Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/201—Integrated devices having a three-dimensional layout, e.g. 3D ICs
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6684—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a ferroelectric gate insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP03104889 | 2003-12-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE362178T1 true ATE362178T1 (de) | 2007-06-15 |
Family
ID=34717220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04801422T ATE362178T1 (de) | 2003-12-22 | 2004-12-01 | Nichtflüchtiger ferroelektrischer dünnfilm- baustein mit einem organischen ambipolaren halbleiter und verfahren zum verarbeiten eines solchen bausteins |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7829884B2 (de) |
| EP (1) | EP1700309B1 (de) |
| JP (1) | JP2007523469A (de) |
| KR (1) | KR20060123368A (de) |
| CN (1) | CN1898747B (de) |
| AT (1) | ATE362178T1 (de) |
| DE (1) | DE602004006441T2 (de) |
| TW (1) | TW200601551A (de) |
| WO (1) | WO2005064614A1 (de) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4883558B2 (ja) * | 2005-03-25 | 2012-02-22 | 国立大学法人大阪大学 | 両極性有機電界効果薄層トランジスター及びその製造方法 |
| JP4883672B2 (ja) * | 2005-11-16 | 2012-02-22 | 国立大学法人神戸大学 | 強誘電体記憶素子及び強誘電体記憶装置 |
| JP2007184462A (ja) * | 2006-01-10 | 2007-07-19 | Agfa Gevaert Nv | 強誘電性記憶素子、その素子を含むデバイス及びその製法 |
| US8137767B2 (en) | 2006-11-22 | 2012-03-20 | Fujifilm Corporation | Antireflective film, polarizing plate and image display device |
| EP1995736A1 (de) * | 2007-05-22 | 2008-11-26 | Rijksuniversiteit Groningen | Ferroelektrische Vorrichtung und modulierbare Injektionsbarriere |
| EP2340576A2 (de) * | 2008-10-29 | 2011-07-06 | Koninklijke Philips Electronics N.V. | Feldeffekttransistor mit zweifachem gate und verfahren zur herstellung eines feldeffekttransistors mit zweifachem gate |
| KR101201891B1 (ko) | 2009-03-26 | 2012-11-16 | 한국전자통신연구원 | 투명 비휘발성 메모리 박막 트랜지스터 및 그의 제조 방법 |
| WO2010119124A1 (en) | 2009-04-16 | 2010-10-21 | Imec | Organic non-volatile memory device |
| DE102009032696A1 (de) * | 2009-07-09 | 2011-01-13 | Polyic Gmbh & Co. Kg | Organisch elektronische Schaltung |
| US8558295B2 (en) * | 2009-08-25 | 2013-10-15 | Electronics And Telecommunications Research Institute | Nonvolatile memory cell and method of manufacturing the same |
| KR101148798B1 (ko) * | 2010-02-26 | 2012-05-24 | 연세대학교 산학협력단 | 누설 전류를 억제하는 수단이 구비된 강유전체 메모리 소자 및 그 강유전체 메모리 소자의 제조 방법 |
| ITMI20111446A1 (it) * | 2011-07-29 | 2013-01-30 | E T C Srl | Transistor organico elettroluminescente |
| ITMI20111447A1 (it) | 2011-07-29 | 2013-01-30 | E T C Srl | Transistor organico elettroluminescente |
| CN103296206B (zh) * | 2013-06-13 | 2016-08-10 | 复旦大学 | 有机非易失性铁电三位存储器及其制造方法 |
| JP2016164899A (ja) * | 2013-07-05 | 2016-09-08 | 旭硝子株式会社 | 有機トランジスタ素子の製造方法 |
| US9373742B2 (en) | 2014-03-06 | 2016-06-21 | The Regents Of The University Of Michigan | Plasma-assisted techniques for fabricating semiconductor devices |
| KR101537492B1 (ko) * | 2014-12-26 | 2015-07-16 | 성균관대학교산학협력단 | 강유전체를 이용한 2차원 구조 물질의 p―n 접합 형성 방법 및 강유전체를 이용하여 p―n 접합된 2차원 구조 물질 |
| DE112020001816T5 (de) | 2019-04-08 | 2021-12-23 | Kepler Computing, Inc. | Dotierte polare Schichten Und Halbleitervorrichtung enthaltend dieselben |
| US11289602B2 (en) * | 2020-01-03 | 2022-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | FeFET of 3D structure for capacitance matching |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3035331B2 (ja) * | 1990-11-15 | 2000-04-24 | オリンパス光学工業株式会社 | メモリセル及びメモリ装置 |
| CN100483774C (zh) * | 1999-12-21 | 2009-04-29 | 造型逻辑有限公司 | 半导体器件及其形成方法 |
| JP4688343B2 (ja) * | 2001-05-16 | 2011-05-25 | ルネサスエレクトロニクス株式会社 | 強誘電体メモリ装置 |
| EP1306909A1 (de) * | 2001-10-24 | 2003-05-02 | Interuniversitair Micro-Elektronica Centrum | Ambipolarer organischer Transistor |
| DE10200475A1 (de) * | 2002-01-09 | 2003-07-24 | Samsung Sdi Co | Nichtflüchtiges Speicherelement und Anzeigematrizen daraus |
| NO315399B1 (no) * | 2002-03-01 | 2003-08-25 | Thin Film Electronics Asa | Minnecelle |
| JP2003281883A (ja) * | 2002-03-26 | 2003-10-03 | Matsushita Electric Ind Co Ltd | 半導体記憶装置及びその駆動方法 |
-
2004
- 2004-12-01 CN CN200480038611XA patent/CN1898747B/zh not_active Expired - Fee Related
- 2004-12-01 AT AT04801422T patent/ATE362178T1/de not_active IP Right Cessation
- 2004-12-01 KR KR1020067012374A patent/KR20060123368A/ko not_active Application Discontinuation
- 2004-12-01 US US10/584,039 patent/US7829884B2/en not_active Expired - Fee Related
- 2004-12-01 DE DE602004006441T patent/DE602004006441T2/de active Active
- 2004-12-01 JP JP2006544618A patent/JP2007523469A/ja not_active Withdrawn
- 2004-12-01 EP EP04801422A patent/EP1700309B1/de not_active Not-in-force
- 2004-12-01 WO PCT/IB2004/052613 patent/WO2005064614A1/en active Application Filing
- 2004-12-17 TW TW093139253A patent/TW200601551A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP1700309A1 (de) | 2006-09-13 |
| KR20060123368A (ko) | 2006-12-01 |
| JP2007523469A (ja) | 2007-08-16 |
| DE602004006441T2 (de) | 2008-05-15 |
| WO2005064614A1 (en) | 2005-07-14 |
| CN1898747B (zh) | 2010-06-16 |
| CN1898747A (zh) | 2007-01-17 |
| US20070252137A1 (en) | 2007-11-01 |
| TW200601551A (en) | 2006-01-01 |
| EP1700309B1 (de) | 2007-05-09 |
| US7829884B2 (en) | 2010-11-09 |
| DE602004006441D1 (de) | 2007-06-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |