WO2013032191A3 - 버퍼층을 포함하는 비휘발성 고분자 기억 소자 및 그의 제조 방법 - Google Patents

버퍼층을 포함하는 비휘발성 고분자 기억 소자 및 그의 제조 방법 Download PDF

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Publication number
WO2013032191A3
WO2013032191A3 PCT/KR2012/006806 KR2012006806W WO2013032191A3 WO 2013032191 A3 WO2013032191 A3 WO 2013032191A3 KR 2012006806 W KR2012006806 W KR 2012006806W WO 2013032191 A3 WO2013032191 A3 WO 2013032191A3
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WO
WIPO (PCT)
Prior art keywords
memory device
pedot
buffer layer
thin film
manufacturing same
Prior art date
Application number
PCT/KR2012/006806
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English (en)
French (fr)
Other versions
WO2013032191A2 (ko
WO2013032191A9 (ko
Inventor
김태환
손정민
Original Assignee
한양대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한양대학교 산학협력단 filed Critical 한양대학교 산학협력단
Publication of WO2013032191A2 publication Critical patent/WO2013032191A2/ko
Publication of WO2013032191A3 publication Critical patent/WO2013032191A3/ko
Publication of WO2013032191A9 publication Critical patent/WO2013032191A9/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/50—Bistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/51—Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)

Abstract

본 발명은 비휘발성 고분자 기억 소자 및 그의 제조 방법에 관한 것으로, 보다 구체적으로는 기판, 상기 기판 상에 형성된 하부전극, 상기 하부전극 상에 형성된 버퍼층, 상기 버퍼층 상에 형성된 PEDOT:PSS 박막층, 및 상기 PEDOT:PSS 박막층 상에 형성된 상부전극을 포함하는 비휘발성 기억 소자 및 그의 제조 방법에 관한 것이다. 본 발명의 비휘발성 기억 소자는 하부전극과 PEDOT:PSS 박막층 사이에 버퍼층을 삽입함으로써, 하부전극과 PEDOT:PSS 박막층 사이에 산화막 형성이 방지되는 효과가 있고, 유연성 기판을 이용하여 제작됨에도 불구하고 PEDOT:PSS 박막층의 상부면이 고른 거칠기로 형성되는 효과가 있다. 따라서, 유연하면서도 PEDOT:PSS 기억 소자의 메모리 마진을 높게 유지할 수 있는 효과가 있다.
PCT/KR2012/006806 2011-08-26 2012-08-27 버퍼층을 포함하는 비휘발성 고분자 기억 소자 및 그의 제조 방법 WO2013032191A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0085758 2011-08-26
KR1020110085758A KR20130022819A (ko) 2011-08-26 2011-08-26 버퍼층을 포함하는 비휘발성 고분자 기억 소자 및 그의 제조 방법

Publications (3)

Publication Number Publication Date
WO2013032191A2 WO2013032191A2 (ko) 2013-03-07
WO2013032191A3 true WO2013032191A3 (ko) 2013-04-25
WO2013032191A9 WO2013032191A9 (ko) 2013-06-13

Family

ID=47757033

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/006806 WO2013032191A2 (ko) 2011-08-26 2012-08-27 버퍼층을 포함하는 비휘발성 고분자 기억 소자 및 그의 제조 방법

Country Status (2)

Country Link
KR (1) KR20130022819A (ko)
WO (1) WO2013032191A2 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107635769B (zh) 2015-05-19 2020-09-15 康宁股份有限公司 使片材与载体粘结的制品和方法
JP7260523B2 (ja) 2017-08-18 2023-04-18 コーニング インコーポレイテッド ポリカチオン性高分子を使用した一時的結合
KR102195263B1 (ko) * 2019-08-13 2020-12-24 연세대학교 산학협력단 신체 부착형 전자소자 및 이의 방수형 비휘발성 메모리 구조
WO2021173372A1 (en) * 2020-02-26 2021-09-02 Corning Incorporated Temporary bonding of substrates with large roughness using multilayers of polyelectrolytes
CN112331773B (zh) * 2020-10-26 2023-02-07 复旦大学 一种全透明的防水柔性有机忆阻器及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040159835A1 (en) * 2001-08-13 2004-08-19 Krieger Juri Heinrich Memory device
KR20050025088A (ko) * 2003-09-03 2005-03-11 더 리전트 오브 더 유니버시티 오브 캘리포니아 전계 프로그래밍가능 막에 기초한 메모리 디바이스
US20060240324A1 (en) * 2004-03-25 2006-10-26 Epstein Arthur J Multifunctional doped conducting polymer-based field effect devices
US20100127247A1 (en) * 2007-07-27 2010-05-27 The Regents Of The University Of California Polymer electronic devices by all-solution process

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040159835A1 (en) * 2001-08-13 2004-08-19 Krieger Juri Heinrich Memory device
KR20050025088A (ko) * 2003-09-03 2005-03-11 더 리전트 오브 더 유니버시티 오브 캘리포니아 전계 프로그래밍가능 막에 기초한 메모리 디바이스
US20060240324A1 (en) * 2004-03-25 2006-10-26 Epstein Arthur J Multifunctional doped conducting polymer-based field effect devices
US20100127247A1 (en) * 2007-07-27 2010-05-27 The Regents Of The University Of California Polymer electronic devices by all-solution process

Also Published As

Publication number Publication date
WO2013032191A2 (ko) 2013-03-07
KR20130022819A (ko) 2013-03-07
WO2013032191A9 (ko) 2013-06-13

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