ATE352858T1 - Feldemissions-elektronenquelle, verfahren zu deren herstellung und anzeigevorrichtung mit einer solchen elektronenquelle - Google Patents

Feldemissions-elektronenquelle, verfahren zu deren herstellung und anzeigevorrichtung mit einer solchen elektronenquelle

Info

Publication number
ATE352858T1
ATE352858T1 AT99122729T AT99122729T ATE352858T1 AT E352858 T1 ATE352858 T1 AT E352858T1 AT 99122729 T AT99122729 T AT 99122729T AT 99122729 T AT99122729 T AT 99122729T AT E352858 T1 ATE352858 T1 AT E352858T1
Authority
AT
Austria
Prior art keywords
electron source
silicon substrate
type silicon
drift layer
strong field
Prior art date
Application number
AT99122729T
Other languages
English (en)
Inventor
Takashi Hatai
Takuya Komoda
Yoshiaki Honda
Koichi Aizawa
Yoshifumi Watabe
Tsutomu Ichihara
Yukihiro Kondo
Nobuyoshi Koshida
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Application granted granted Critical
Publication of ATE352858T1 publication Critical patent/ATE352858T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
AT99122729T 1998-11-16 1999-11-16 Feldemissions-elektronenquelle, verfahren zu deren herstellung und anzeigevorrichtung mit einer solchen elektronenquelle ATE352858T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP32510698 1998-11-16
JP10863299 1999-04-15
JP11571899 1999-04-23
JP26030299 1999-09-14

Publications (1)

Publication Number Publication Date
ATE352858T1 true ATE352858T1 (de) 2007-02-15

Family

ID=27469650

Family Applications (2)

Application Number Title Priority Date Filing Date
AT99122729T ATE352858T1 (de) 1998-11-16 1999-11-16 Feldemissions-elektronenquelle, verfahren zu deren herstellung und anzeigevorrichtung mit einer solchen elektronenquelle
AT06025503T ATE519216T1 (de) 1998-11-16 1999-11-16 Verfahren zur herstellung einer feldemissions- elektronenquelle

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT06025503T ATE519216T1 (de) 1998-11-16 1999-11-16 Verfahren zur herstellung einer feldemissions- elektronenquelle

Country Status (10)

Country Link
US (1) US6285118B1 (de)
EP (2) EP1003195B1 (de)
KR (1) KR100596189B1 (de)
CN (1) CN1282210C (de)
AT (2) ATE352858T1 (de)
DE (1) DE69934958T2 (de)
DK (2) DK1003195T3 (de)
ES (1) ES2281158T3 (de)
SG (1) SG86360A1 (de)
TW (1) TW436837B (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6794805B1 (en) 1998-05-26 2004-09-21 Matsushita Electric Works, Ltd. Field emission electron source, method of producing the same, and use of the same
KR100338140B1 (ko) * 1998-09-25 2002-05-24 이마이 기요스케 전계 방사형 전자원
US6498426B1 (en) * 1999-04-23 2002-12-24 Matsushita Electric Works, Ltd. Field emission-type electron source and manufacturing method thereof
US20060127583A1 (en) * 2003-12-18 2006-06-15 Lichtenhan Joseph D Polyhedral oligomeric silsesquioxanes and polyhedral oligomeric silicates barrier materials for packaging
KR100374782B1 (ko) * 1999-10-18 2003-03-04 마츠시다 덴코 가부시키가이샤 전계 방출형 전자원 및 그 제조방법
US6815875B2 (en) * 2001-02-27 2004-11-09 Hewlett-Packard Development Company, L.P. Electron source having planar emission region and focusing structure
JP3716755B2 (ja) * 2001-04-05 2005-11-16 株式会社日立製作所 アクティブマトリクス型表示装置
WO2002089166A1 (fr) * 2001-04-24 2002-11-07 Matsushita Electric Works, Ltd. Source d'electrons a emission de champ et son procede de production
US6781146B2 (en) * 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
US6753544B2 (en) 2001-04-30 2004-06-22 Hewlett-Packard Development Company, L.P. Silicon-based dielectric tunneling emitter
US6911768B2 (en) * 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6771010B2 (en) 2001-04-30 2004-08-03 Hewlett-Packard Development Company, L.P. Silicon emitter with low porosity heavily doped contact layer
US6753196B2 (en) * 2001-06-26 2004-06-22 Matsushita Electric Works, Ltd. Method of and apparatus for manufacturing field emission-type electron source
KR100491305B1 (ko) * 2001-09-25 2005-05-24 마츠시다 덴코 가부시키가이샤 전계방사형 전자원
DE60236835D1 (de) 2001-10-29 2010-08-12 Panasonic Elec Works Co Ltd Elektronenquelle des Feldemissionstyps und Verfahren zum Anlegen einer Vorspannung
US6558968B1 (en) * 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer
US6852554B2 (en) 2002-02-27 2005-02-08 Hewlett-Packard Development Company, L.P. Emission layer formed by rapid thermal formation process
KR100625836B1 (ko) * 2002-03-08 2006-09-20 마츠시다 덴코 가부시키가이샤 양자장치
KR100563978B1 (ko) * 2002-05-14 2006-03-29 마츠시다 덴코 가부시키가이샤 전기화학산화방법
AU2003292557A1 (en) * 2002-12-27 2004-07-29 Matsushita Electric Works, Ltd. Field emission-type electron source and method of producing the same
JP2004265603A (ja) * 2003-01-14 2004-09-24 Sharp Corp 電子放出装置および電子放出素子クリーニング装置および電子放出素子クリーニング方法
US20050017624A1 (en) * 2003-07-23 2005-01-27 Thomas Novet Electron emitter with epitaxial layers
WO2005052978A2 (en) * 2003-11-25 2005-06-09 Matsushita Electric Works, Ltd. Method and apparatus for modifying object with electrons generated from cold cathode electron emitter
CN100544836C (zh) * 2003-12-18 2009-09-30 杂混复合塑料公司 作为涂料、复合材料和添加剂的多面体低聚倍半硅氧烷和金属化的多面体低聚倍半硅氧烷
KR100612853B1 (ko) * 2004-07-21 2006-08-14 삼성전자주식회사 와이어 형태의 실리사이드를 포함하는 Ｓｉ 계열 물질층및 그 제조방법
TW200635771A (en) * 2004-12-08 2006-10-16 Hybrid Plastics Inc Polyhedral oligomeric silsesquioxanes and polyhedral oligomeric silicates barrier materials for packaging
CN101953231B (zh) * 2008-02-15 2014-09-03 昭和电工株式会社 电极的表面处理方法和电极、以及有机电致发光元件的制造方法
JP5374432B2 (ja) 2010-03-31 2013-12-25 パナソニック株式会社 電子デバイスおよびその製造方法
US9953989B2 (en) 2014-03-31 2018-04-24 Taiwan Semiconductor Manufacturing Company Limited and National Taiwan University Antifuse array and method of forming antifuse using anodic oxidation
US9528194B2 (en) 2014-03-31 2016-12-27 Taiwan Semiconductor Manufacturing Company Limited & National Taiwan University Systems and methods for forming nanowires using anodic oxidation

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3665241A (en) 1970-07-13 1972-05-23 Stanford Research Inst Field ionizer and field emission cathode structures and methods of production
US4291318A (en) * 1979-12-03 1981-09-22 Exxon Research & Engineering Co. Amorphous silicon MIS device
US5430300A (en) 1991-07-18 1995-07-04 The Texas A&M University System Oxidized porous silicon field emission devices
US5495121A (en) * 1991-09-30 1996-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPH0621509A (ja) * 1992-07-06 1994-01-28 Fujitsu Ltd ポーラスシリコンの製造方法
JPH0690018A (ja) * 1992-09-08 1994-03-29 Fujitsu Ltd 発光素子及びその製造方法
JPH0689891A (ja) 1992-09-08 1994-03-29 Fujitsu Ltd 多孔質シリコン層の加工方法
JP3027101B2 (ja) 1994-12-02 2000-03-27 シャープ株式会社 多孔質シリコンの形成方法
JP3226745B2 (ja) 1995-03-09 2001-11-05 科学技術振興事業団 半導体冷電子放出素子及びこれを用いた装置
KR100201554B1 (ko) * 1995-06-12 1999-06-15 하제준 전계방출어레이의 제조방법
US5872052A (en) * 1996-02-12 1999-02-16 Micron Technology, Inc. Planarization using plasma oxidized amorphous silicon
JP3281533B2 (ja) * 1996-03-26 2002-05-13 パイオニア株式会社 冷電子放出表示装置及び半導体冷電子放出素子
JP3282535B2 (ja) 1997-04-01 2002-05-13 栗田工業株式会社 スパイラル型膜モジュール及び袋状膜並びに膜分離方法
US5869946A (en) 1997-02-27 1999-02-09 Stmicroelectronics, Inc. PWM control of motor driver
US5990605A (en) * 1997-03-25 1999-11-23 Pioneer Electronic Corporation Electron emission device and display device using the same
JP3537624B2 (ja) * 1997-03-25 2004-06-14 パイオニア株式会社 電子放出素子
JPH10272340A (ja) 1997-03-31 1998-10-13 Nippon Steel Corp コークス炉排ガス脱硝方法
TW391022B (en) 1997-10-29 2000-05-21 Mitsubishi Rayon Co Field emission electron source, method of producing the same, and use of the same
JP2966842B1 (ja) * 1998-09-25 1999-10-25 松下電工株式会社 電界放射型電子源

Also Published As

Publication number Publication date
CN1282210C (zh) 2006-10-25
DK1003195T3 (da) 2007-05-21
KR20000035507A (ko) 2000-06-26
ATE519216T1 (de) 2011-08-15
DE69934958T2 (de) 2007-10-25
EP1003195A2 (de) 2000-05-24
CN1254173A (zh) 2000-05-24
ES2281158T3 (es) 2007-09-16
EP1003195A3 (de) 2000-12-20
EP1793404A2 (de) 2007-06-06
EP1793404A3 (de) 2008-11-05
SG86360A1 (en) 2002-02-19
EP1793404B1 (de) 2011-08-03
EP1003195B1 (de) 2007-01-24
DE69934958D1 (de) 2007-03-15
TW436837B (en) 2001-05-28
KR100596189B1 (ko) 2006-07-05
DK1793404T3 (da) 2011-10-10
US6285118B1 (en) 2001-09-04

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