DK0989577T3 - Feltemissionselektronkilde - Google Patents

Feltemissionselektronkilde

Info

Publication number
DK0989577T3
DK0989577T3 DK99118925T DK99118925T DK0989577T3 DK 0989577 T3 DK0989577 T3 DK 0989577T3 DK 99118925 T DK99118925 T DK 99118925T DK 99118925 T DK99118925 T DK 99118925T DK 0989577 T3 DK0989577 T3 DK 0989577T3
Authority
DK
Denmark
Prior art keywords
silicon substrate
type silicon
electron source
emission electron
field emission
Prior art date
Application number
DK99118925T
Other languages
English (en)
Inventor
Takuya Komoda
Tsutomu Ichihara
Koichi Aizawa
Nobuyoshi Koshida
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP27234298A external-priority patent/JP2966842B1/ja
Priority claimed from JP11570799A external-priority patent/JP3079097B1/ja
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Application granted granted Critical
Publication of DK0989577T3 publication Critical patent/DK0989577T3/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/312—Cold cathodes having an electric field perpendicular to the surface thereof
    • H01J2201/3125—Metal-insulator-Metal [MIM] emission type cathodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/939—Electron emitter, e.g. spindt emitter tip coated with nanoparticles

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electron Sources, Ion Sources (AREA)
DK99118925T 1998-09-25 1999-09-25 Feltemissionselektronkilde DK0989577T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27234298A JP2966842B1 (ja) 1998-09-25 1998-09-25 電界放射型電子源
JP11570799A JP3079097B1 (ja) 1999-04-23 1999-04-23 電界放射型電子源およびその製造方法

Publications (1)

Publication Number Publication Date
DK0989577T3 true DK0989577T3 (da) 2004-03-08

Family

ID=26454174

Family Applications (1)

Application Number Title Priority Date Filing Date
DK99118925T DK0989577T3 (da) 1998-09-25 1999-09-25 Feltemissionselektronkilde

Country Status (10)

Country Link
US (2) US6590321B1 (da)
EP (1) EP0989577B1 (da)
KR (2) KR100338140B1 (da)
CN (1) CN1182561C (da)
AT (1) ATE259097T1 (da)
DE (1) DE69914556T2 (da)
DK (1) DK0989577T3 (da)
ES (1) ES2213320T3 (da)
SG (1) SG74751A1 (da)
TW (1) TW436836B (da)

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US6794805B1 (en) 1998-05-26 2004-09-21 Matsushita Electric Works, Ltd. Field emission electron source, method of producing the same, and use of the same
KR100338140B1 (ko) * 1998-09-25 2002-05-24 이마이 기요스케 전계 방사형 전자원
TW472273B (en) 1999-04-23 2002-01-11 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof
US6765342B1 (en) 1999-10-18 2004-07-20 Matsushita Electric Work, Ltd. Field emission-type electron source and manufacturing method thereof
JP4222707B2 (ja) * 2000-03-24 2009-02-12 東京エレクトロン株式会社 プラズマ処理装置及び方法、ガス供給リング及び誘電体
JP3806751B2 (ja) * 2000-05-23 2006-08-09 独立行政法人科学技術振興機構 量子サイズ効果型微小電子銃の製造方法
EP1320116A1 (en) * 2001-04-24 2003-06-18 Matsushita Electric Works, Ltd. Field emission electron source and production method thereof
US6753544B2 (en) 2001-04-30 2004-06-22 Hewlett-Packard Development Company, L.P. Silicon-based dielectric tunneling emitter
US6781146B2 (en) * 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
US6753196B2 (en) * 2001-06-26 2004-06-22 Matsushita Electric Works, Ltd. Method of and apparatus for manufacturing field emission-type electron source
KR100491305B1 (ko) * 2001-09-25 2005-05-24 마츠시다 덴코 가부시키가이샤 전계방사형 전자원
KR20030032133A (ko) * 2001-10-10 2003-04-26 유종훈 비정질실리콘 박막층이 증착된 다공질실리콘 반도체의제조방법
DE60236835D1 (de) 2001-10-29 2010-08-12 Panasonic Elec Works Co Ltd Elektronenquelle des Feldemissionstyps und Verfahren zum Anlegen einer Vorspannung
JP4285684B2 (ja) * 2002-03-08 2009-06-24 パナソニック電工株式会社 量子デバイスおよびその製造方法
US6787792B2 (en) 2002-04-18 2004-09-07 Hewlett-Packard Development Company, L.P. Emitter with filled zeolite emission layer
JP2004178863A (ja) * 2002-11-25 2004-06-24 Toshiba Corp 電子源装置および表示装置
KR100499136B1 (ko) 2002-12-14 2005-07-04 삼성전자주식회사 전자 스핀의존 산란을 이용한 자성매체 및 자성매체정보재생장치 및 재생방법
US7015496B2 (en) * 2002-12-27 2006-03-21 Semiconductor Energy Laboratory Co., Ltd. Field emission device and manufacturing method thereof
US6770353B1 (en) * 2003-01-13 2004-08-03 Hewlett-Packard Development Company, L.P. Co-deposited films with nano-columnar structures and formation process
JP3868934B2 (ja) * 2003-08-01 2007-01-17 株式会社東芝 電極製造方法
US7898160B2 (en) 2003-11-25 2011-03-01 Panasonic Electric Works Co., Ltd. Method and apparatus for modifying object with electrons generated from cold cathode electron emitter
JP4442203B2 (ja) * 2003-11-25 2010-03-31 パナソニック電工株式会社 電子線放射装置
KR100659100B1 (ko) * 2005-10-12 2006-12-21 삼성에스디아이 주식회사 디스플레이 장치와 이의 제조 방법
KR100719580B1 (ko) * 2005-11-22 2007-05-17 삼성에스디아이 주식회사 평판 디스플레이 장치
KR100730168B1 (ko) * 2005-11-22 2007-06-19 삼성에스디아이 주식회사 디스플레이 장치 및 이의 제조 방법
KR100741095B1 (ko) * 2005-12-12 2007-07-20 삼성에스디아이 주식회사 표시 장치
US20070188090A1 (en) * 2006-02-15 2007-08-16 Matsushita Toshiba Picture Display Co., Ltd. Field-emission electron source apparatus
US7825591B2 (en) * 2006-02-15 2010-11-02 Panasonic Corporation Mesh structure and field-emission electron source apparatus using the same
KR100813834B1 (ko) * 2006-03-04 2008-03-17 삼성에스디아이 주식회사 산화된 다공성 실리콘 물질계 전자방출원을 구비한디스플레이 소자의 제조방법
JP5536977B2 (ja) * 2007-03-30 2014-07-02 パナソニック株式会社 面発光体
JP5129674B2 (ja) * 2008-07-09 2013-01-30 パナソニック株式会社 発光装置
JP5374432B2 (ja) 2010-03-31 2013-12-25 パナソニック株式会社 電子デバイスおよびその製造方法
RU2654522C1 (ru) * 2016-06-22 2018-05-21 Акционерное общество "Научно-исследовательский институт молекулярной электроники" (АО "НИИМЭ") Способ повышения плотности тока и деградационной стойкости автоэмиссионных катодов на кремниевых пластинах
TWI627940B (zh) * 2017-01-16 2018-07-01 華廣生技股份有限公司 Physiological parameter monitoring system

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US3665241A (en) 1970-07-13 1972-05-23 Stanford Research Inst Field ionizer and field emission cathode structures and methods of production
US5430300A (en) 1991-07-18 1995-07-04 The Texas A&M University System Oxidized porous silicon field emission devices
JPH0690018A (ja) * 1992-09-08 1994-03-29 Fujitsu Ltd 発光素子及びその製造方法
DE4231310C1 (de) 1992-09-18 1994-03-24 Siemens Ag Verfahren zur Herstellung eines Bauelementes mit porösem Silizium
JPH06338631A (ja) 1993-03-29 1994-12-06 Canon Inc 発光素子及びその製造方法
JP3243471B2 (ja) * 1994-09-16 2002-01-07 三菱電機株式会社 電子放出素子の製造方法
JP3226745B2 (ja) 1995-03-09 2001-11-05 科学技術振興事業団 半導体冷電子放出素子及びこれを用いた装置
JP3281533B2 (ja) 1996-03-26 2002-05-13 パイオニア株式会社 冷電子放出表示装置及び半導体冷電子放出素子
JP3537624B2 (ja) 1997-03-25 2004-06-14 パイオニア株式会社 電子放出素子
US5990605A (en) 1997-03-25 1999-11-23 Pioneer Electronic Corporation Electron emission device and display device using the same
TW391022B (en) * 1997-10-29 2000-05-21 Mitsubishi Rayon Co Field emission electron source, method of producing the same, and use of the same
JP2000188057A (ja) * 1998-12-22 2000-07-04 Matsushita Electric Works Ltd 電子源
JP3084272B2 (ja) * 1998-12-22 2000-09-04 松下電工株式会社 電界放射型電子源
KR100338140B1 (ko) * 1998-09-25 2002-05-24 이마이 기요스케 전계 방사형 전자원
TW436837B (en) 1998-11-16 2001-05-28 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof and display using the electron source
TW472273B (en) 1999-04-23 2002-01-11 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof
KR100374782B1 (ko) 1999-10-18 2003-03-04 마츠시다 덴코 가부시키가이샤 전계 방출형 전자원 및 그 제조방법

Also Published As

Publication number Publication date
DE69914556T2 (de) 2004-12-23
ES2213320T3 (es) 2004-08-16
US20030197457A1 (en) 2003-10-23
EP0989577A3 (en) 2000-04-05
CN1182561C (zh) 2004-12-29
KR20010101847A (ko) 2001-11-14
CN1249525A (zh) 2000-04-05
US6590321B1 (en) 2003-07-08
TW436836B (en) 2001-05-28
KR100356244B1 (ko) 2002-10-12
EP0989577A2 (en) 2000-03-29
SG74751A1 (en) 2000-08-22
EP0989577B1 (en) 2004-02-04
US6791248B2 (en) 2004-09-14
ATE259097T1 (de) 2004-02-15
KR100338140B1 (ko) 2002-05-24
KR20000023410A (ko) 2000-04-25
DE69914556D1 (de) 2004-03-11

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