ATE288088T1 - Projektionsbelichtungsvorrichtung mit katadioptrischem projektionssystem - Google Patents
Projektionsbelichtungsvorrichtung mit katadioptrischem projektionssystemInfo
- Publication number
- ATE288088T1 ATE288088T1 AT99111428T AT99111428T ATE288088T1 AT E288088 T1 ATE288088 T1 AT E288088T1 AT 99111428 T AT99111428 T AT 99111428T AT 99111428 T AT99111428 T AT 99111428T AT E288088 T1 ATE288088 T1 AT E288088T1
- Authority
- AT
- Austria
- Prior art keywords
- reticle
- optical system
- image
- catadioptric
- exposure device
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 abstract 5
- 238000005286 illumination Methods 0.000 abstract 2
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0892—Catadioptric systems specially adapted for the UV
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
- G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lenses (AREA)
- Liquid Crystal (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18149898A JP3985346B2 (ja) | 1998-06-12 | 1998-06-12 | 投影露光装置、投影露光装置の調整方法、及び投影露光方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE288088T1 true ATE288088T1 (de) | 2005-02-15 |
Family
ID=16101820
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT99111428T ATE288088T1 (de) | 1998-06-12 | 1999-06-11 | Projektionsbelichtungsvorrichtung mit katadioptrischem projektionssystem |
Country Status (5)
Country | Link |
---|---|
US (2) | US6466303B1 (de) |
EP (1) | EP0964282B1 (de) |
JP (1) | JP3985346B2 (de) |
AT (1) | ATE288088T1 (de) |
DE (1) | DE69923376T2 (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10010131A1 (de) * | 2000-03-03 | 2001-09-06 | Zeiss Carl | Mikrolithographie - Projektionsbelichtung mit tangentialer Polarisartion |
US7301605B2 (en) * | 2000-03-03 | 2007-11-27 | Nikon Corporation | Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices |
DE10016176A1 (de) | 2000-03-31 | 2001-10-04 | Zeiss Carl | Mikrolithographisches Beleuchtungssystem und Mikrolithographische Projektionsbelichtungsanlage damit |
JP3927753B2 (ja) * | 2000-03-31 | 2007-06-13 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
DE10124566A1 (de) * | 2001-05-15 | 2002-11-21 | Zeiss Carl | Optisches Abbildungssystem mit Polarisationsmitteln und Quarzkristallplatte hierfür |
DE10124474A1 (de) | 2001-05-19 | 2002-11-21 | Zeiss Carl | Mikrolithographisches Belichtungsverfahren sowie Projektionsobjektiv zur Durchführung des Verfahrens |
US7031069B2 (en) | 2001-05-19 | 2006-04-18 | Carl Zeiss Smt Ag | Microlithographic illumination method and a projection lens for carrying out the method |
JP3826047B2 (ja) | 2002-02-13 | 2006-09-27 | キヤノン株式会社 | 露光装置、露光方法、及びそれを用いたデバイス製造方法 |
US20050190446A1 (en) * | 2002-06-25 | 2005-09-01 | Carl Zeiss Amt Ag | Catadioptric reduction objective |
US6922293B2 (en) * | 2002-07-02 | 2005-07-26 | Nikon Corporation | Kinematic optical mounting assembly with flexures |
DE10240598A1 (de) | 2002-08-27 | 2004-03-25 | Carl Zeiss Smt Ag | Optisches Abbildungssystem, insbesondere katadioptrisches Reduktionsobjektiv |
TW200412617A (en) * | 2002-12-03 | 2004-07-16 | Nikon Corp | Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method |
EP3226073A3 (de) | 2003-04-09 | 2017-10-11 | Nikon Corporation | Belichtungsverfahren und -vorrichtung sowie verfahren zur herstellung der vorrichtung |
US7423343B2 (en) * | 2003-08-05 | 2008-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Wiring board, manufacturing method thereof, semiconductor device and manufacturing method thereof |
DE10338983A1 (de) | 2003-08-20 | 2005-03-17 | Carl Zeiss Smt Ag | Projektionsobjektiv für die Mikrolithografie |
US7408616B2 (en) * | 2003-09-26 | 2008-08-05 | Carl Zeiss Smt Ag | Microlithographic exposure method as well as a projection exposure system for carrying out the method |
TW201834020A (zh) * | 2003-10-28 | 2018-09-16 | 日商尼康股份有限公司 | 照明光學裝置、曝光裝置、曝光方法以及元件製造方法 |
JP2005136244A (ja) * | 2003-10-31 | 2005-05-26 | Semiconductor Leading Edge Technologies Inc | 露光方法 |
TW201809801A (zh) | 2003-11-20 | 2018-03-16 | 日商尼康股份有限公司 | 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法 |
CN1910522B (zh) | 2004-01-16 | 2010-05-26 | 卡尔蔡司Smt股份公司 | 偏振调制光学元件 |
US8270077B2 (en) | 2004-01-16 | 2012-09-18 | Carl Zeiss Smt Gmbh | Polarization-modulating optical element |
US20070019179A1 (en) | 2004-01-16 | 2007-01-25 | Damian Fiolka | Polarization-modulating optical element |
TWI437618B (zh) | 2004-02-06 | 2014-05-11 | 尼康股份有限公司 | 偏光變換元件、光學照明裝置、曝光裝置以及曝光方法 |
DE102004010569A1 (de) * | 2004-02-26 | 2005-09-15 | Carl Zeiss Smt Ag | Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage |
JP4497968B2 (ja) | 2004-03-18 | 2010-07-07 | キヤノン株式会社 | 照明装置、露光装置及びデバイス製造方法 |
JP4776891B2 (ja) | 2004-04-23 | 2011-09-21 | キヤノン株式会社 | 照明光学系、露光装置、及びデバイス製造方法 |
US7242456B2 (en) * | 2004-05-26 | 2007-07-10 | Asml Holdings N.V. | System and method utilizing a lithography tool having modular illumination, pattern generator, and projection optics portions |
JP2006173305A (ja) * | 2004-12-15 | 2006-06-29 | Canon Inc | 露光装置及び方法、並びに、デバイス製造方法 |
US7349068B2 (en) * | 2004-12-17 | 2008-03-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20080192224A1 (en) * | 2005-02-12 | 2008-08-14 | Carl Zeiss Smt Ag | Microlithographic Projection Exposure Apparatus |
DE102005031084A1 (de) * | 2005-06-28 | 2007-01-04 | Carl Zeiss Smt Ag | Mikrolithografisches Belichtungsverfahren sowie Projektionsbelichtungsanlage zur Durchführung des Verfahrens |
DE102006031807A1 (de) * | 2005-07-12 | 2007-01-18 | Carl Zeiss Smt Ag | Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage, sowie Depolarisator |
WO2007020004A1 (de) | 2005-08-17 | 2007-02-22 | Carl Zeiss Smt Ag | Projektionsobjektiv und verfahren zur optimierung einer systemblende eines projektionsobjektivs |
US20070091452A1 (en) * | 2005-10-25 | 2007-04-26 | Scott Lerner | Projection system and method |
US7649676B2 (en) * | 2006-06-14 | 2010-01-19 | Asml Netherlands B.V. | System and method to form unpolarized light |
DE102006032878A1 (de) * | 2006-07-15 | 2008-01-17 | Carl Zeiss Smt Ag | Beleuchtungssystem einer mikrolithographischen Projektionsbelichtungsanlage |
US7817250B2 (en) * | 2007-07-18 | 2010-10-19 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus |
DE102008041179B4 (de) | 2008-08-12 | 2010-11-04 | Carl Zeiss Smt Ag | Beleuchtungsoptik für eine Mikrolithografie-Projektionsbelichtungsanlage |
JP2009065175A (ja) * | 2008-10-02 | 2009-03-26 | Canon Inc | 照明光学系 |
DE102011084637A1 (de) | 2011-10-17 | 2013-04-18 | Carl Zeiss Smt Gmbh | Mikrolithographisches Belichtungsverfahren, sowie Beleuchtungseinrichtung |
CN104950584B (zh) * | 2014-03-25 | 2018-01-30 | 上海微电子装备(集团)股份有限公司 | 成像对准系统 |
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DE19535392A1 (de) | 1995-09-23 | 1997-03-27 | Zeiss Carl Fa | Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit |
JPH09167735A (ja) * | 1995-12-15 | 1997-06-24 | Canon Inc | 投影露光装置及びそれを用いた半導体デバイスの製造方法 |
DE19637563A1 (de) | 1996-09-14 | 1998-03-19 | Zeiss Carl Fa | Doppelbrechende Planplattenanordnung und DUV-Viertelwellenplatte |
JPH10153866A (ja) * | 1996-11-22 | 1998-06-09 | Nikon Corp | 照明装置および該照明装置を備えた露光装置 |
KR100245414B1 (ko) | 1997-06-26 | 2000-03-02 | 윤종용 | 노광 시스템과 노광 시스템의 노광 방법 |
DE19807120A1 (de) | 1998-02-20 | 1999-08-26 | Zeiss Carl Fa | Optisches System mit Polarisationskompensator |
DE19810089A1 (de) | 1998-03-10 | 1999-09-16 | Zeiss Carl Fa | Doppelbrechende Plattenanordnung mit Spannungsdoppelbrechung |
DE19829612A1 (de) | 1998-07-02 | 2000-01-05 | Zeiss Carl Fa | Beleuchtungssystem der Mikrolithographie mit Depolarisator |
DE19851749A1 (de) | 1998-11-10 | 2000-05-11 | Zeiss Carl Fa | Polarisationsoptisch kompensiertes Objektiv |
DE19921795A1 (de) | 1999-05-11 | 2000-11-23 | Zeiss Carl Fa | Projektions-Belichtungsanlage und Belichtungsverfahren der Mikrolithographie |
DE10010131A1 (de) | 2000-03-03 | 2001-09-06 | Zeiss Carl | Mikrolithographie - Projektionsbelichtung mit tangentialer Polarisartion |
DE10124474A1 (de) | 2001-05-19 | 2002-11-21 | Zeiss Carl | Mikrolithographisches Belichtungsverfahren sowie Projektionsobjektiv zur Durchführung des Verfahrens |
-
1998
- 1998-06-12 JP JP18149898A patent/JP3985346B2/ja not_active Expired - Lifetime
-
1999
- 1999-06-11 AT AT99111428T patent/ATE288088T1/de not_active IP Right Cessation
- 1999-06-11 US US09/330,442 patent/US6466303B1/en not_active Expired - Fee Related
- 1999-06-11 DE DE69923376T patent/DE69923376T2/de not_active Expired - Lifetime
- 1999-06-11 EP EP99111428A patent/EP0964282B1/de not_active Expired - Lifetime
-
2002
- 2002-08-23 US US10/226,347 patent/US6661499B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6466303B1 (en) | 2002-10-15 |
JP3985346B2 (ja) | 2007-10-03 |
US6661499B2 (en) | 2003-12-09 |
EP0964282A3 (de) | 2000-05-10 |
DE69923376T2 (de) | 2006-03-30 |
EP0964282A2 (de) | 1999-12-15 |
DE69923376D1 (de) | 2005-03-03 |
US20030011756A1 (en) | 2003-01-16 |
EP0964282B1 (de) | 2005-01-26 |
JP2000003852A (ja) | 2000-01-07 |
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